Abstract: The admission of a gas to a reaction chamber which has been previously evacuated is followed by its excitation by either a high-frequency electrostatic field or an electromagnetic field, formed by capacitor plates or a coil, respectively, which envelops the outer wall of the reaction chamber. A perforated metallic cylinder is disposed within the chamber concentrically with the long axis of the chamber and comprises the material-handling zone of the chamber. The activated gas reacts with material placed within the perforated cylinder, during which reaction inactive gas and resultant gaseous byproducts are continuously withdrawn. The construction of the chamber and the internal perforated metallic cylinder are such as to provide very uniform distribution of gaseous excited species throughout the entire material-processing volume within the cylinder thereby promoting very uniform chemical conversions of practical interest.

Abstract: A process for etching polysilicon material preferentially over silicon oxide. The process is anisotropic and employs a moderate to low pressure of Freon 11 (CFCl.sub.3) in an RF plasma discharge. In a second embodiment helium is mixed with the Freon 11 to inhibit degradation of the photoresist mask.

Abstract: Disclosed are apparatus for forming dense and tightly adhering dielectric films on the surface of conductors, semiconductors, and insulators. The apparatus includes a reaction chamber into which a gas is admitted, dispersed, and subjected to a radio frequency exciting field to form a highly luminous glow discharge zone within the chamber. Another gas is admitted separately and is dispersed downstream from the glow discharge zone, immediately above the substrate to be coated.

Abstract: A process step for use in the manufacture of thin film integrated circuits, to enable, in one process, the removal of all the photoresist material from underlying metallic films without concomitant degradation of the metallic surface and in another process, preferential etching of silicon nitrides and oxides without significant simultaneous etching of single crystal silicon. The material is exposed to a low pressure (few torr) rf generated "cold" plasma, where the plasma is a homogeneous gaseous mixture of oxygen, a halogen containing compound and a noble gas.

Abstract: A organo-halide composition for use in the manufacture of semiconductor devices. To enable the removal of all the photoresist material along with its inorganic contamination, after development and etching of preselected portions of an oxide layer on a semiconductor slice, the material is exposed to a low pressure (few torr) rf generated "cold" plasma (200.degree.-300.degree.C), where the plasma is a homogeneous gaseous mixture of oxygen and organohalides. The organo-halide preferably is a binary or ternary mixture where each component preferably includes no more than two carbon atoms per molecule and is desirably fully halogensubstituted. One of the substituents should include predominantly chlorine, while the other should include a predominance of either fluorine or fluorine-bromine combinations.

Abstract: A process step and material for use in the manufacture of semiconductor photomasks. To facilitate the etching of unmasked chromium, gold, and other metals capable of forming oxychloride derivatives on preselected portions of a substrate material, the material is exposed to a low pressure rf generated "cold" plasma (under 300.degree.C) produced from a homogeneous gaseous mixture of oxygen and a halogen containing compound.

Abstract: A process step for use in the manufacture of thin film integrated circuits, hybrid circuits and fine metallic mesh screens, to enable the removal of all organics and photoresist material from underlying metallic films without concomitant degradation of the metallic surface. After etching of preselected portions of an underlying critical metallic surface, the material is exposed to a low pressure (few torr) rf generated "cold" plasma, where the plasma is a homogeneous gaseous mixture of oxygen and nitrogen.

Abstract: A process step and material for use in the manufacture of semiconductor devices. To facilitate the etching of unmasked silicon dioxide, silicon nitride, silicon monoxide, bare silicon layers, or various refractory metals on preselected portions of a semiconductor slice, the material is exposed to a low pressure RF generated "cold" plasma (under 325.degree. C.) produced from a homogeneous gaseous binary mixture of oxygen and a halocarbon. The halocarbon is preferably a gas having one carbon atom per molecule and is preferably fully fluorine-substituted.