Abstract: A Chip-Scale QFN (Chip Scale QFN, CSQFN) plastic packaging system is provided and is for high frequency integrated circuits with high electrical and thermal performance, that does not use connecting wires, which are inexpensive and reliable, whose connection to PCB can be reprocessed and that are compatible with standard SMD bonding processes on PCB.

Abstract: A planar combiner system for use in high-power multi-component power amplifier architectures in solid-state amplifiers is realized by planar placement of a wideband, low-loss, insulated and compact asymmetric Lange coupling and Wilkinson-type combiner on a base with high thermal conductivity and electrical resistance, allowing the amplifiers to directly contact the cold plate.

Abstract: A broadband choke inductor is used in a bias circuit for broadband high-power distributed amplifiers.

Abstract: A power amplifier system which operates at a narrow band with high power and high efficiency or at a wide band is provided. Said power amplifier system comprises at least one high power amplifier; at least one connection line; at least one input block which receives at least one signal from an input, which is connected to said high power amplifier and connection line, which sends received signal to either high power amplifier or connection line and which amplifies the power of the signal sent to the connection line; and at least one high power asymmetric output switch, which is connected to said high power amplifier and connection line and which sends signals coming from said high power amplifier and connection line to an output.

Abstract: A supply circuit providing transmission of a control signal to gate leg by a power transistor. The supply circuit includes a primary transistor, a primary resistance connected between the primary transistor drain leg and ground; a secondary resistant connected to supply leg of primary transistor on one side and to gate leg, the primary transistor and a power supply from other side; a secondary transistor connected to drain leg of primary transistor from gate leg, connected to ground from drain leg and connected to the power supply by means of a third resistance from supply leg and a control signal output connected to the secondary transistor supply leg, providing transmission of a control signal by power transistor to a gate leg.

Abstract: An active limiting system that is suitable to protect a low noise amplifier against the high power signals received from a signal input includes, at least one first switch, source of which is connected to a gate voltage; at least first resistor which is connected between the gate and source of the first switch; at least one second resistor, which is connected between a drain voltage and drain of the first switch; at least one second switch, source of which is connected to said drain voltage and drain of which is connected to a signal input; at least one third resistor which is connected between the drain of the first switch and gate of the second switch; at least one first filtering element, which blocks DC currents/voltages and which is connected between the source of the second switch and ground.

Abstract: A power amplifier system which operates at a narrow band with high power and high efficiency or at a wide band is provided. Said power amplifier system comprises at least one high power amplifier; at least one connection line; at least one input block which receives at least one signal from an input, which is connected to said high power amplifier and connection line, which sends received signal to either high power amplifier or connection line and which amplifies the power of the signal sent to the connection line; and at least one high power asymmetric output switch, which is connected to said high power amplifier and connection line and which sends signals coming from said high power amplifier and connection line to an output.

Abstract: A chip structure, suitable to be used in radar applications includes, at least one gallium based first layer to perform RF applications; at least one gallium based second layer, placed on the first layer, to perform digital applications; at least two copper based pillars located between the first layer and the second layer, which provide electrical connection between the first layer and second layer and which ensure that there is a safe distance between the first layer and second layer.

Abstract: An active limiting system that is suitable to protect a low noise amplifier against the high power signals received from a signal input includes, at least one first switch, source of which is connected to a gate voltage; at least first resistor which is connected between the gate and source of the first switch; at least one second resistor, which is connected between a drain voltage and drain of the first switch; at least one second switch, source of which is connected to said drain voltage and drain of which is connected to a signal input; at least one third resistor which is connected between the drain of the first switch and gate of the second switch; at least one first filtering element, which blocks DC currents/voltages and which is connected between the source of the second switch and ground.