Patents by Inventor Ahsan Ashraf
Ahsan Ashraf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220402754Abstract: Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: ApplicationFiled: July 6, 2022Publication date: December 22, 2022Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
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Patent number: 11390518Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: GrantFiled: December 8, 2020Date of Patent: July 19, 2022Assignee: Brookhaven Science Associates, LLCInventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
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Publication number: 20210094821Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: ApplicationFiled: December 8, 2020Publication date: April 1, 2021Inventors: Charles T. BLACK, Atikur RAHMAN, Matthew EISAMAN, Ahsan ASHRAF
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Patent number: 10882739Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: GrantFiled: September 6, 2018Date of Patent: January 5, 2021Assignee: BROOKHAVEN SCIENCE ASSOCIATES, LLC.Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
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Patent number: 10333017Abstract: Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.Type: GrantFiled: March 20, 2015Date of Patent: June 25, 2019Assignees: Brookhaven Science Associates, LLC, The Research Foundation for the State University of New YorkInventors: Nanditha M. Dissanayake, Matthew Eisaman, Ahsan Ashraf, Nancy Goroff, Xiuzhu Ang
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Patent number: 10290507Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: GrantFiled: June 13, 2014Date of Patent: May 14, 2019Assignee: BROOKHAVEN SCIENCE ASSOCIATES, LLCInventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
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Publication number: 20190004215Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: ApplicationFiled: September 6, 2018Publication date: January 3, 2019Inventors: Charles T. BLACK, Atiku RAHMAN, Matthew EISAMAN, Ahsan ASHRAF
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Publication number: 20170110616Abstract: Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.Type: ApplicationFiled: March 20, 2015Publication date: April 20, 2017Applicants: Brookhaven Science Associates, LLC, The Research Foundation for The State University of New York, The Research Foundation for The State University of New YorkInventors: Nanditha Dissanayake, Matthew Eisaman, Ahsan Ashraf, Nancy Goroff, Xiuzhu Ang
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Publication number: 20160139302Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.Type: ApplicationFiled: June 13, 2014Publication date: May 19, 2016Applicant: Brookhaven Science Associates, LLCInventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf