Patents by Inventor Ahsan Ashraf

Ahsan Ashraf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220402754
    Abstract: Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Application
    Filed: July 6, 2022
    Publication date: December 22, 2022
    Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
  • Patent number: 11390518
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Grant
    Filed: December 8, 2020
    Date of Patent: July 19, 2022
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
  • Publication number: 20210094821
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Application
    Filed: December 8, 2020
    Publication date: April 1, 2021
    Inventors: Charles T. BLACK, Atikur RAHMAN, Matthew EISAMAN, Ahsan ASHRAF
  • Patent number: 10882739
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: January 5, 2021
    Assignee: BROOKHAVEN SCIENCE ASSOCIATES, LLC.
    Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
  • Patent number: 10333017
    Abstract: Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.
    Type: Grant
    Filed: March 20, 2015
    Date of Patent: June 25, 2019
    Assignees: Brookhaven Science Associates, LLC, The Research Foundation for the State University of New York
    Inventors: Nanditha M. Dissanayake, Matthew Eisaman, Ahsan Ashraf, Nancy Goroff, Xiuzhu Ang
  • Patent number: 10290507
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: May 14, 2019
    Assignee: BROOKHAVEN SCIENCE ASSOCIATES, LLC
    Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf
  • Publication number: 20190004215
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Application
    Filed: September 6, 2018
    Publication date: January 3, 2019
    Inventors: Charles T. BLACK, Atiku RAHMAN, Matthew EISAMAN, Ahsan ASHRAF
  • Publication number: 20170110616
    Abstract: Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.
    Type: Application
    Filed: March 20, 2015
    Publication date: April 20, 2017
    Applicants: Brookhaven Science Associates, LLC, The Research Foundation for The State University of New York, The Research Foundation for The State University of New York
    Inventors: Nanditha Dissanayake, Matthew Eisaman, Ahsan Ashraf, Nancy Goroff, Xiuzhu Ang
  • Publication number: 20160139302
    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
    Type: Application
    Filed: June 13, 2014
    Publication date: May 19, 2016
    Applicant: Brookhaven Science Associates, LLC
    Inventors: Charles T. Black, Atikur Rahman, Matthew Eisaman, Ahsan Ashraf