Patents by Inventor Akhlesh Gupta

Akhlesh Gupta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10319873
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: June 11, 2019
    Assignee: First Solar, Inc.
    Inventors: Rick C. Powell, Upali Jayamaha, Anke Abken, Markus Gloeckler, Akhlesh Gupta, Roger T. Green, Peter Meyers
  • Patent number: 10153386
    Abstract: A multilayered structure may include a doped buffer layer on a transparent conductive oxide layer.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: December 11, 2018
    Assignee: First Solar, Inc.
    Inventors: Benyamin Buller, Akhlesh Gupta
  • Publication number: 20170352772
    Abstract: A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.
    Type: Application
    Filed: August 22, 2017
    Publication date: December 7, 2017
    Applicant: First Solar, Inc.
    Inventors: David Eaglesham, Akhlesh Gupta, Peter V. Meyers
  • Publication number: 20170288073
    Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.
    Type: Application
    Filed: June 12, 2017
    Publication date: October 5, 2017
    Applicant: First Solar, Inc.
    Inventors: Benyamin Buller, Markus Gloeckler, Akhlesh Gupta, Rick Powell, Rui Shao, Gang Xiong, Ming Lun Yu, Zhibo Zhao
  • Publication number: 20170084762
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Application
    Filed: December 5, 2016
    Publication date: March 23, 2017
    Inventors: Akhlesh Gupta, Rick C. Powell, David Eaglesham
  • Publication number: 20170054052
    Abstract: A method for producing, apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.
    Type: Application
    Filed: November 3, 2016
    Publication date: February 23, 2017
    Inventors: Markus Gloeckler, Akhlesh Gupta, Xilin Peng, Rick C. Powell, Jigish Trivedi, Jianjun Wang, Zhibo Zhao
  • Patent number: 9537039
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer. The photovoltaic cell can include a transparent conductive layer and a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer including magnesium. In certain circumstances, a substrate can be a glass substrate. In other circumstances, a substrate can be a metal layer. The first semiconductor layer can include CdS. The first semiconductor layer can have a thickness of between about 200 or 3000 Angstroms. The first semiconductor layer can include 1-20% magnesium. A method of manufacturing a photovoltaic cell can include providing a transparent conductive layer and depositing a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer treated with magnesium.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: January 3, 2017
    Assignee: First Solar, Inc.
    Inventors: Akhlesh Gupta, Ricky C. Powell, David Eaglesham
  • Patent number: 9406829
    Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: August 2, 2016
    Assignee: First Solar, Inc.
    Inventors: Pratima Addepalli, Benyamin Buller, Markus Gloeckler, Akhlesh Gupta, David Hwang, Andrei Los, Rick Powell, Rui Shao, Gang Xiong, Ming Lun Yu, San Yu, Zhibo Zhao
  • Publication number: 20160197226
    Abstract: A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer.
    Type: Application
    Filed: March 14, 2016
    Publication date: July 7, 2016
    Inventors: Akhlesh Gupta, Markus Gloeckler, Rick C. Powell
  • Publication number: 20160126398
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Application
    Filed: January 13, 2016
    Publication date: May 5, 2016
    Inventors: Rick C. Powell, Upali Jayamaha, Anke Abken, Markus Gloeckler, Akhlesh Gupta, Roger T. Green, Peter Meyers
  • Patent number: 9318642
    Abstract: A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: April 19, 2016
    Assignee: FIRST SOLAR, INC.
    Inventors: Akhlesh Gupta, Markus Gloeckler, Ricky C. Powell
  • Patent number: 9263608
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Grant
    Filed: October 31, 2008
    Date of Patent: February 16, 2016
    Assignee: First Solar, Inc.
    Inventors: Rick C. Powell, Upali Jayamaha, Anke Abken, Markus Gloeckler, Akhlesh Gupta, Roger T. Green, Peter Meyers
  • Publication number: 20150236173
    Abstract: A multilayered structure may include a doped buffer layer on a transparent conductive oxide layer.
    Type: Application
    Filed: April 29, 2015
    Publication date: August 20, 2015
    Applicant: First Solar, Inc.
    Inventors: Benyamin Buller, Akhlesh Gupta
  • Patent number: 8987587
    Abstract: A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: March 24, 2015
    Assignee: First Solar, Inc.
    Inventors: Long Cheng, Akhlesh Gupta, Anke Abken, Benyamin Buller
  • Publication number: 20150000733
    Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.
    Type: Application
    Filed: June 27, 2014
    Publication date: January 1, 2015
    Inventors: Benyamin Buller, Markus Gloeckler, Akhlesh Gupta, Rick Powell, Rui Shao, Gang Xiong, Ming Lun Yu, Zhibo Zhao
  • Publication number: 20150004743
    Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.
    Type: Application
    Filed: June 27, 2014
    Publication date: January 1, 2015
    Inventors: Pratima Addepalli, Benyamin Buller, Markus Gloeckler, Akhlesh Gupta, David Hwang, Andrei Los, Rick Powell, Rui Shao, Gang Xiong, Ming Lun Yu, San Yu, Zhibo Zhao
  • Patent number: 8766088
    Abstract: A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.
    Type: Grant
    Filed: June 3, 2010
    Date of Patent: July 1, 2014
    Assignee: First Solar, Inc.
    Inventors: Long Cheng, Akhlesh Gupta, Anke Abken, Benyamin Buller
  • Publication number: 20130327391
    Abstract: A method for producing apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.
    Type: Application
    Filed: May 21, 2013
    Publication date: December 12, 2013
    Applicant: FIRST SOLAR, INC
    Inventors: Markus Gloeckler, Akhlesh Gupta, Xilin Peng, Rick C. Powell, Jigish Trivedi, Jianjun Wang, Zhibo Zhao
  • Publication number: 20130005075
    Abstract: A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
    Type: Application
    Filed: September 13, 2012
    Publication date: January 3, 2013
    Inventors: Long Chen, Akhlesh Gupta, Anke Abken, Benyamin Buller
  • Patent number: 8334455
    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.
    Type: Grant
    Filed: July 22, 2009
    Date of Patent: December 18, 2012
    Assignee: First Solar, Inc.
    Inventors: Akhlesh Gupta, Rick C. Powell, David Eaglesham