Abstract: An image processing device includes: a subtitle information acquisition unit configured to acquire subtitle information; a subtitle processing unit configured to perform rendering of subtitles with a resolution of an entire image of a display panel on the basis of the subtitle information acquired by the subtitle information acquisition unit to generate a subtitle image of a corresponding area among a plurality of display areas divided in the display panel; a corresponding image generation unit configured to generate an image signal of the corresponding area; and a combination unit configured to combine the subtitle image generated by the subtitle processing unit with the image signal generated by the corresponding image generation unit to generate an image signal with subtitles.

Abstract: An encoding device includes: an encoding processing section that performs encoding processing on image data serving as a processing target; and a control unit that controls the encoding processing to make a bit rate in a rate control area higher than a bit rate in an area other than the rate control area, the rate control area being located near a division boundary when the image data serving as the processing target is divided into a plurality of regions.

Abstract: There is provided a copper alloy backing tube formed of a copper alloy having a composition containing 0.10 mass % or more and 0.30 mass % or less of Co, 0.030 mass % or more and 0.10 mass % or less of P, 0.01 mass % or more and 0.50 mass % or less of Sn, 0.02 mass % or more and 0.10 mass % or less of Ni, and 0.01 mass % or more and 0.10 mass % or less of Zn. A copper balance containing impurities. A mass ratio [Co]/[P] is set to be within a range of 3.0 or higher and 6.0 or lower. A thermal conductivity is set to 250 W/(m·K) or higher. A micro-Vickers hardness after a heating treatment is performed in a condition of being held for one hour at 250° C. is 100 Hv or higher, and a decrease rate from a hardness before the heating treatment is set to 5% or less.

Abstract: A semi-reflective film and reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities, and a target which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities; and a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities, and an Ag alloy sputtering target for forming a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities.

Abstract: An Au—Sn alloy bump that does not include large voids and a method of producing the same are provided. The Au—Sn alloy bump that does not include large voids comprises a composition containing Sn: 20.5 to 23.5 mass % and the balance Au and unavoidable impurities, and a structure where 0.5 to 30 area % of Sn-rich primary crystal phase is crystallized in the matrix.

Abstract: A sputtering target for forming a ZrO2—In2O3 based protective film for an optical storage medium, has a component composition made of ZraInbAcO100-a-b-c where “A” represents one, two, or more of Si, Cr, Al, Ce, Ti, and Sn, “a” represents an amount greater than 5 atomic percent and less than 23 atomic percent, “b” represents an amount greater than 12 atomic percent and less than 35 atomic percent, and “c” represents an amount greater than 0 and less than 30 atomic percent, wherein 90% or more of Zr that is included in the sputtering target for forming the protective film for the optical storage medium is in an oxidative product phase in which Zr and In are combined, and is dispersed in a base material of the target.

Abstract: A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al6Si2O13, La2SiO5, or In2Si2O7 is formed in a base of the target.

Abstract: For generation of a subtitle in a digital movie screening system, it is essential to reduce the burden of processing the subtitle when screening a movie.

Abstract: Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAl4 intermetallic compound phase and a Ba7Al13 intermetallic compound phase, and Eu forms a solid solution with Ba in the BaAl4 intermetallic compound and in the Ba7Al13 intermetallic compound, respectively.

Abstract: A sputtering target for forming a ZrO2—In2O3 based protective film for an optical storage medium, has a component composition made of ZraInbAcO100-a-b-c where “A” represents one, two, or more of Si, Cr, Al, Ce, Ti, and Sn, “a” represents an amount greater than 5 atomic percent and less than 23 atomic percent, “b” represents an amount greater than 12 atomic percent and less than 35 atomic percent, and “c” represents an amount greater than 0 and less than 30 atomic percent, wherein 90% or more of Zr that is included in the sputtering target for forming the protective film for the optical storage medium is in an oxidative product phase in which Zr and In are combined, and is dispersed in a base material of the target.

Abstract: A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al6Si2O13, La2SiO5, or In2Si2O7 is formed in a base of the target.

Abstract: A semi-reflective film and reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities, and a target which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities; and a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities, and an Ag alloy sputtering target for forming a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities.

Abstract: Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAl4 intermetallic compound phase and a Ba7Al13 intermetallic compound phase, and Eu forms a solid solution with Ba in the BaAl4 intermetallic compound and in the Ba7Al13 intermetallic compound, respectively.

Abstract: An Au—Sn alloy bump that does not include large voids and a method of producing the same are provided. The An Au—Sn alloy bump that does not include large voids comprises a composition containing Sn: 20.5 to 23.5 mass % and the balance Au and unavoidable impurities, and a structure where 0.5 to 30 area % of Sn-rich primary crystal phase is crystallized in the matrix.

Abstract: For generation of a subtitle in a digital movie screening system, it is essential to reduce the burden of processing the subtitle when screening a movie.

Abstract: Ag alloy sputtering target of the invention comprises (1) an Ag alloy containing 0.1 to 20 wt % of Zn, 0.1 to 3 wt % of Al, and a balance of Ag, (2) an Ag alloy containing 0.1 to 20 wt % of Zn, 0.1 to 3 wt % of Al, totally 0.005 to 0.05 wt % of one or more elements selected from Ca, Be, and Si, and a balance of Ag, or (3) an Ag alloy containing 0.5 to 5 wt % of Cu, 0.

Abstract: A silver alloy sputtering target for forming Ag alloy reflective layer of optical recording media such as magneto-optical recording disks (MD, MO) and optical recording disks (CD-RW, DVD-RAM) is provided. The sputtering target is made of (1) a silver alloy having a composition of 0.5 to 3% by mass of Cu and 0.1 to 3% by mass in total of one or more elements selected from among Dy, La, Nd, Tb and Gd, with the remainder consisting of Ag; (2) a silver alloy having a composition of 0.5 to 3% by mass of Cu and 0.005 to 0.05% by mass in total of one or more elements selected from among Ca, Be and Si, with the remainder consisting of Ag; or (3) a silver alloy having composition of 0.5 to 3% by mass of Cu, 0.1 to 3% by mass in total of one or more elements selected from among Dy, La, Nd, Tb and Gd and 0.005 to 0.05% by mass in total of one or more elements selected from among Ca, Be and Si, with the remainder consisting of Ag.

Abstract: The invention is equipped with setting means for setting whether files under the same custody structure are preferentially selected, procuring means for procuring information on a day on which the last access was made and information on the file size regarding each one of the respective files stored in the memory means, calculating means for calculating a score regarding each of the respective files according to the number of days that have lapsed from the day of the last access and the file size, and selecting means for selecting a desired file from among the respective files by using the score and the result of the setting performed by the setting means. With this construction, when in the computer of hierarchy storage management type collectively replacing a file within the buffer memory with a file that is newly transferred from the main memory, it is so arranged that a plurality of files under the same directory can be collectively replaced.

Abstract: An electrode plate which can provide a uniformly-etched surface to an etching surface of a plate to be etched is disclosed, which is used for a plasma etching equipment having such a structure that an electrode plate having a plurality of small vertical through holes is arranged opposite to an etching surface at a prescribed distance from the etching surface, and an etching gas which is introduced into the plasma etching equipment is jetted from the small vertical through holes of the electrode plate and plasma is generated between the etching surface and the surface of the electrode plate to carry out etching, and is characterized in that the electrode plate is composed of high-pure silicon having a cast structure which is formed by a unidirectional solidification perpendicular to the etching surface, thereby to make it possible to form a uniformly-etched surface.

Abstract: A dielectric sputtering target of high strength comprising a sintered barium, strontium titanate body, which is oxygen deficient, of the formula: Ba1-xSrxTiO3-y, wherein 0<x<1 and 0<y≦0.03, the sintered body having a mean grain size of 0.3 to 5 &mgr;m, a maximum grain size of 20 &mgr;m or less, a relative density of 95% to 99%, a purity of 4N or more, a K content of 1 ppm or less, a Na content of 2 ppm or less, an Al content of 5 ppm or less, a Si content of 20 ppm or less, an Fe content of 2 ppm or less and a mean flexural strength of 150 MPa or more.