Patents by Inventor Akiharu Miyanaga

Akiharu Miyanaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10930792
    Abstract: To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.
    Type: Grant
    Filed: February 6, 2020
    Date of Patent: February 23, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hidekazu Miyairi, Akiharu Miyanaga, Kengo Akimoto, Kojiro Shiraishi
  • Patent number: 10916663
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: February 9, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga
  • Publication number: 20200395486
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 17, 2020
    Inventors: Shunpei YAMAZAKI, Jun KOYAMA, Masahiro TAKAHASHI, Hideyuki KISHIDA, Akiharu MIYANAGA, Junpei SUGAO, Hideki UOCHI, Yasuo NAKAMURA
  • Patent number: 10815425
    Abstract: A quantum dot has a property that, when subjected to a GC-MS qualitative analysis at 350° C., octadecene (ODE) is present while oleylamine (OLA) is absent. A light emitting apparatus has a fluorescent layer covering and disposed immediately above a light emitting side of a light emitting device. The fluorescent layer, which is disposed immediately above the light emitting device, is formed of a resin with quantum dots dispersed therein. Deteriorations of light emission intensities at respective RGB peak wavelengths of the light emitting device after light emission for 1000 hours at 85° C. are all within 30% of a light emission intensity of the light emitting device before the light emission. Black discoloration caused by the deteriorations of the light emission intensities at the respective RGB peak wavelengths of the light emitting device does not occur in the resin.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: October 27, 2020
    Assignee: NS MATERIALS INC.
    Inventors: Akiharu Miyanaga, Eiichi Kanaumi, Yoshikazu Nageno
  • Publication number: 20200328325
    Abstract: Provided is a light emitting device and an illumination device that include quantum dots. A light emitting device includes an anode, a hole transport layer, an emitting layer, an electron transport layer, and a cathode. The light emitting layer is formed of an inorganic layer containing quantum dots. All the layers from the anode to the cathode are preferably each formed of the inorganic layer. The hole transport layer, the emitting layer, and the electron transport layer are preferably each constituted by the inorganic layer formed from nanoparticles.
    Type: Application
    Filed: October 17, 2018
    Publication date: October 15, 2020
    Applicant: NS MATERIALS INC.
    Inventors: Akiharu MIYANAGA, Tetsuji ITO, Mayuko WATANABE
  • Patent number: 10770596
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: September 8, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga, Junpei Sugao, Hideki Uochi, Yasuo Nakamura
  • Patent number: 10676667
    Abstract: To provide a quantum dot and manufacturing method of the dot particularly capable of reducing organic residues adhering to the quantum dot surface and of suppressing the black discoloration occurrence of a layer including the quantum dot positioned immediately above a light emitting device, and a compact, sheet member, wavelength conversion member and light emitting apparatus with high luminous efficiency using the quantum dot, a quantum dot of the present invention has a core portion including a semiconductor particle, and a shell portion with which the surface of the core portion is coated, and is characterized in that a weight reduction up to 490° C. is within 75% in a TG-DTA profile. Further, the quantum dot of the invention is characterized in that oleylamine (OLA) is not observed in GC-MS qualitative analysis at 350° C.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: June 9, 2020
    Assignee: NS MATERIALS INC.
    Inventors: Akiharu Miyanaga, Eiichi Kanaumi, Yoshikazu Nageno
  • Publication number: 20200176606
    Abstract: To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.
    Type: Application
    Filed: February 6, 2020
    Publication date: June 4, 2020
    Inventors: Shunpei YAMAZAKI, Hidekazu MIYAIRI, Akiharu MIYANAGA, Kengo AKIMOTO, Kojiro SHIRAISHI
  • Patent number: 10670230
    Abstract: A wavelength conversion member having quantum dots is provided. The wavelength conversion member includes a quantum dot layer including quantum dots, and an organic film on a surface of the quantum dot layer. The quantum dot layer includes a first layer disposed on a first side of the wavelength conversion member that is closest to a light emitting device or on a light input surface side, and a second layer disposed on a second side of the wavelength conversion member that is farthest from the light emitting device or on a light output surface side. A light scattering agent is included in the first layer and the second layer. The quantum dots are not included in the first layer and are included in the second layer.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: June 2, 2020
    Assignee: NS MATERIALS INC.
    Inventors: Akiharu Miyanaga, Eiichi Kanaumi
  • Publication number: 20200111913
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Application
    Filed: October 11, 2019
    Publication date: April 9, 2020
    Inventors: Shunpei YAMAZAKI, Jun KOYAMA, Masahiro TAKAHASHI, Hideyuki KISHIDA, Akiharu MIYANAGA, Junpei SUGAO, Hideki UOCHI, Yasuo NAKAMURA
  • Patent number: 10598843
    Abstract: To provide a wavelength converting member that allows for improved yield, in which air bubbles can be prevented from being left in a resin containing a wavelength converting material; a light emitting device, a light emitting element, a light source unit, a display device, and a light guide member using the wavelength converting member; and a method of producing the wavelength converting member. A wavelength converting member has a receptacle provided with a receiving space; and a molding containing a wavelength converting material, placed in the receiving space. This allows air bubbles from being left in the wavelength converting material and improves the yield.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: March 24, 2020
    Assignee: NS MATERIALS INC.
    Inventors: Akiharu Miyanaga, Eiichi Kanaumi, Shingo Kokudo
  • Patent number: 10598844
    Abstract: It is an object of the present invention to provide a wavelength conversion member capable of appropriately performing color conversion compared to the prior arts and a light-emitting apparatus, a light-emitting element, a light source apparatus, and a display apparatus using the wavelength conversion member. A wavelength conversion member of the present invention includes a light incident surface, a light emission surface and a side face that connects between the light incident surface and the light emission surface, and includes a container provided with a storage space inside the side face, a wavelength conversion substance that fills the inside of the storage space and a colored layer formed on the side face.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: March 24, 2020
    Assignee: NS MATERIALS INC.
    Inventors: Shingo Kokudo, Akiharu Miyanaga, Eiichi Kanaumi, Tetsuji Ito, Yoshikazu Nageno
  • Publication number: 20200079649
    Abstract: To provide a quantum dot-containing member, a sheet member, a backlight device, and a display device containing quantum dots capable of effectively suppressing a temporal change of a light emission intensity, particularly, without providing a barrier layer, a sheet member (1) containing quantum dots of the invention is a sheet member obtained by dispersing quantum dots in resin, and the resin contains the following general formula (1) and general formula (2). where “R1” and “R2” refer to H or CnHm (where “n” and “m” denote integers).
    Type: Application
    Filed: November 13, 2017
    Publication date: March 12, 2020
    Applicant: NS Materials Inc.
    Inventors: Akiharu MIYANAGA, Tetsuji ITO
  • Patent number: 10586869
    Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: March 10, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yusuke Nonaka, Takayuki Inoue, Masashi Tsubuku, Kengo Akimoto, Akiharu Miyanaga
  • Patent number: 10578791
    Abstract: To provide a light guide member which has less components than conventional ones and has stable wavelength conversion efficiency; and a light source unit using the light guide member. A light guide member includes: a light guide plate; a receiving space formed in the light guide plate to face a light entrance plane; and a wavelength converting material placed in the receiving space. With the use of the light guide member, the number of components can be reduced and stable wavelength conversion efficiency can be achieved. Further, the production process can be facilitated and the production cost can be reduced.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: March 3, 2020
    Assignee: NS MATERIALS INC.
    Inventors: Akiharu Miyanaga, Eiichi Kanaumi, Shingo Kokudo
  • Patent number: 10566459
    Abstract: An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: February 18, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akiharu Miyanaga, Masahiro Takahashi, Hideyuki Kishida, Junichiro Sakata
  • Patent number: 10559695
    Abstract: To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.
    Type: Grant
    Filed: May 2, 2017
    Date of Patent: February 11, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hidekazu Miyairi, Akiharu Miyanaga, Kengo Akimoto, Kojiro Shiraishi
  • Publication number: 20200006603
    Abstract: A wavelength converting member is provided. The wavelength converting member includes a quantum dot layer and an outer layer. The quantum dot layer includes quantum dots. The outer layer is on an outer side of the quantum dot layer. A moisture vapor transmission rate of the outer layer is at least 0.006 (g/m2·day) and less than 9 (g/m2·day).
    Type: Application
    Filed: September 11, 2019
    Publication date: January 2, 2020
    Applicant: NS MATERIALS INC.
    Inventors: Akiharu MIYANAGA, Eiichi KANAUMI
  • Publication number: 20200006604
    Abstract: A method of producing a wavelength converting member is provided. The method includes forming a quantum dot layer on a bottom organic layer, and forming a top organic layer on the quantum dot layer. The quantum dot layer includes quantum dots. A moisture vapor transmission rate of the top organic layer and the bottom organic layer is at least 0.006 (g/m2·day) and less than 9 (g/m2·day).
    Type: Application
    Filed: September 11, 2019
    Publication date: January 2, 2020
    Applicant: NS MATERIALS INC.
    Inventors: Akiharu MIYANAGA, Eiichi KANAUMI
  • Publication number: 20190383467
    Abstract: A wavelength conversion member having quantum dots is provided. The wavelength conversion member includes a quantum dot layer including quantum dots, and an organic film on a surface of the quantum dot layer. The quantum dot layer includes a first layer disposed on a first side of the wavelength conversion member that is closest to a light emitting device or on a light input surface side, and a second layer disposed on a second side of the wavelength conversion member that is farthest from the light emitting device or on a light output surface side. A light scattering agent is included in the first layer and the second layer. The quantum dots are not included in the first layer and are included in the second layer.
    Type: Application
    Filed: August 29, 2019
    Publication date: December 19, 2019
    Applicant: NS MATERIALS INC.
    Inventors: Akiharu MIYANAGA, Eiichi KANAUMI