Abstract: A substrate support stage of a plasma processing device, which stably controls a substrate at a relatively high temperature. The substrate support stage includes an electrostatic attraction plate (14) containing a first electrode for holding a substrate (W) by electrostatic attraction, a second electrode for applying a bias to the substrate (W), and a heater for heating the substrate, a cylindrical flange (13) welded to the lower surface of the electrostatic attraction plate (14) and produced from an alloy having the same heat characteristic as the electrostatic attraction plate (14), and a support stage (10) including an O-ring (12) in a surface facing the lower surface of the flange (13), to which the flange (13) is attached via the O-ring (12), wherein when the bias power to be applied to the substrate (W) is changed, the heater power for heating the substrate (W); is changed so that the temperature of the substrate (W) is constant.

Abstract: An object is to provide a substrate support stage of a plasma processing apparatus, in which electrical discharge from a connection terminal is prevented with a simple structure. In the substrate support stage of a plasma processing apparatus, an electrostatic attraction plate (13) configured to electrostatically attract a substrate (W) and to apply a bias to the substrate (W) is provided on an upper surface of a support stage (10) in a vacuum chamber, a sealing member (12) is provided on the upper surface of the support stage (10), an outer periphery side of the sealing member (12) is hermetically sealed as the vacuum chamber, and a connection terminal (17) commonly used for electrostatic attraction voltage supply and bias power supply is disposed on an atmosphere side which is an inner periphery side of the sealing member (12).

Abstract: An object is to provide a plasma processing apparatus and a method for controlling a substrate attraction force in a plasma processing apparatus by which the substrate attraction force is controlled to be constant without being influenced by the number of processed substrates.

Abstract: An object is to provide a plasma film forming apparatus capable of reducing particles even in the case in which a film is formed by applying a bias to a substrate. In the plasma film forming apparatus in which a bias is applied to a substrate (5) placed on a supporting table (4) in a chamber and forming a thin film on the substrate (5) by using plasma, the supporting table (4) has a columnar supporting table main body (4b) having a contact surface in contact with the substrate (5), the contact surface (4a) having an outer diameter (c) smaller than an outer diameter (W) of the substrate (5); and a flange portion (4c) extended in an outer circumferential direction from a side surface (4d) of the supporting table main body (4b); wherein a predetermined first gap (G1) is formed between the flange portion (4c) and a rear surface of the outer circumference of the substrate (5).