Abstract: A connection structure between a printed circuit board and a terminal block includes: an insertion portion at one end of the printed circuit board with a pattern disposed thereon; a terminal-block main body including a receiving port that receives the insertion portion; a nut held in the terminal-block main body; and a screw tightened into the nut. The pattern is interposed between the screw and the nut when the insertion portion is inserted into the receiving port.

Abstract: This invention is directed to a terminal apparatus capable of preventing the degradation of reception quality of control information even in a case of employing SU-MIMO transmission system. A terminal, which uses a plurality of different layers to transmit two code words in which control information is placed, comprises: a resource amount determining unit that determines, based on a lower one of the encoding rates of the two code words or based on the average value of the reciprocals of the encoding rates of the two code words, resource amounts of control information in the respective ones of the plurality of layers; and a transport signal forming unit that places, in the two code words, the control information modulated by use of the resource amounts, thereby forming a transport signal.

Abstract: A first and a second substrate polishing apparatus and are provided with a film thickness sensor for measuring a film thickness of layer to be polished and polish the layer by pressing the substrate against a polishing pad. The first substrate polishing apparatus outputs difference between output value of the film thickness sensor when an underlayer is exposed and output value of the film thickness sensor when the substrate is not present, as a first offset value. The second substrate polishing apparatus has a storage unit that stores information of the first offset value, an output correction unit that corrects the output value from the film thickness sensor based on the first offset value, and an end point detection unit that outputs control signal indicating end point of substrate polishing when measured value of the film thickness of the layer calculated based on the corrected output value reaches target value.

Abstract: A design method of a semiconductor manufacturing apparatus which can satisfy a specification required by a user is disclosed. The design method of the semiconductor manufacturing apparatus includes creating a program setting file; creating a program installer from the program setting file; operating a processing unit of the semiconductor manufacturing apparatus; specifying a sensor corresponding to the processing unit based on the operation of the processing unit; creating a sensor setting file storing information obtained by specifying the sensor; comparing a content of a requirement specification and a content of the sensor setting file to confirm a consistency between the content of the requirement specification and the content of the sensor setting file; and introducing a program into a memory of a controller by the program installer when the content of the requirement specification and the content of the sensor setting file are consistent with each other.

Abstract: A first and a second substrate polishing apparatus and are provided with a film thickness sensor for measuring a film thickness of layer to be polished and polish the layer by pressing the substrate against a polishing pad. The first substrate polishing apparatus outputs difference between output value of the film thickness sensor when an underlayer is exposed and output value of the film thickness sensor when the substrate is not present, as a first offset value. The second substrate polishing apparatus has a storage unit that stores information of the first offset value, an output correction unit that corrects the output value from the film thickness sensor based on the first offset value, and an end point detection unit that outputs control signal indicating end point of substrate polishing when measured value of the film thickness of the layer calculated based on the corrected output value reaches target value.

Abstract: A polishing apparatus of the present disclosure polishes a polishing target by pressing the polishing target against a polishing pad. An eddy current sensor measures an impedance that is changeable according to a change of a film thickness of the polishing target, at a plurality of positions of the polishing target, and outputs measurement signals. A difference calculator generates data corresponding to a film thickness based on a measurement signal. The difference calculator calculates a difference between data at different times based on measurement signals output by the eddy current sensor at different times at a center of the polishing target. An end point detector detects a polishing end point indicating the end of polishing based on the difference calculated by the difference calculator.

Abstract: A design method of a semiconductor manufacturing apparatus which can satisfy a specification required by a user is disclosed. The design method of the semiconductor manufacturing apparatus includes creating a program setting file; creating a program installer from the program setting file; operating a processing unit of the semiconductor manufacturing apparatus; specifying a sensor corresponding to the processing unit based on the operation of the processing unit; creating a sensor setting file storing information obtained by specifying the sensor; comparing a content of a requirement specification and a content of the sensor setting file to confirm a consistency between the content of the requirement specification and the content of the sensor setting file; and introducing a program into a memory of a controller by the program installer when the content of the requirement specification and the content of the sensor setting file are consistent with each other.

Abstract: A polishing apparatus of the present disclosure polishes a polishing target by pressing the polishing target against a polishing pad. An eddy current sensor measures an impedance that is changeable according to a change of a film thickness of the polishing target, at a plurality of positions of the polishing target, and outputs measurement signals. A difference calculator generates data corresponding to a film thickness based on a measurement signal. The difference calculator calculates a difference between data at different times based on measurement signals output by the eddy current sensor at different times at a center of the polishing target. An end point detector detects a polishing end point indicating the end of polishing based on the difference calculated by the difference calculator.

Abstract: A method monitors a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor includes two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor.

Abstract: A polishing method polishes and planarizes a substrate. The substrate is pressed against a polishing surface on a rotating polishing table. During polishing, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor is monitored, and substrate damage is detected from a change in the output of the eddy current sensor. Further, an output of an end point detecting sensor obtained by scanning the surface of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor. After detecting the polishing end point, an output of the end point detecting sensor or another sensor is monitored, and detecting a film left on a part of the substrate is performed.

Abstract: A method monitors a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.

Abstract: The present invention relates to a polishing method and apparatus for polishing and planarizing an object to be polished (substrate) such as a semiconductor wafer. The substrate as an object to be polished is pressed against a polishing surface on a rotating polishing table in the polishing method. During polishing of the substrate, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor obtained by scanning the surface, being polished, of the substrate is monitored, and damage of the substrate is detected from a change in the output of the eddy current sensor. Further, an output of an endpoint detecting sensor obtained by scanning the surface, being polished, of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor.

Abstract: The present invention provides a method of monitoring a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.

Abstract: The present invention provides a method for monitoring a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor comprises two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor.

Abstract: An information retrieval system whereby identical search results can be derived irrespective of the kind of DBMS or OS. A keyword normalizing device normalizes a keyword transmitted from a client through a network. A normalized data searching device then searches normalized data in a data storage section for data corresponding to the normalized keyword, and supplies the data to source data acquiring device. The source data acquiring device acquires source data associated with the normalized data supplied thereto, from among source data in the data storage section, and supplies the acquired source data to a sorting device. The sorting device first sorts the normalized data and then the source data in order of the sorted normalized data, and supplies the resulting source data to a source data supply device. The source data supply device transmits the source data to the client through the network.

Abstract: An information processing system for normalizing an input character string and storing the normalized character string is provided whereby the required storage capacity can be cut down. Normalizing means normalizes an input character string, for example, , and generates , which is then supplied to restoration information generating means and storing means. The restoration information generating means is supplied also with the original character string , besides the normalized character string , and generates restoration information “F@&” consisting of ASCII characters, which is supplied to storing means. The storing means stores the normalized character string and the restoration information “F@&” in a manner associated with each other.

Abstract: Film bodies are provided on opposing surfaces of an upper platen and a lower platen, and a frame is provided on the lower platen. The frame forms a forming room when the upper platen and the lower platen are brought close to each other. One film body is fixed on a heater having a given flexibility and rigidity. The upper platen includes a flow path through which a coolant is circulated. A recessed portion is formed on the lower surface of the upper platen under the film body. The material to be formed is pressurized by the film bodies due to a pressure reduction caused by depressurizing the forming room without reducing its capacity, in a state in which the film body is separated from the recessed portion and heated by the heater. Then, the material is cooled while in tight contact with the recessed portion.

Abstract: A benzamide derivative represented by the formula: ##STR1## having a promoting activity of gastrointestinal tract and pharmacentical composition containing the same.