Abstract: Provided is a transmitter which improves the flexibility of SRS resource allocation without increasing the amount of signaling for notifying the cyclic shift amount. In the transmitter, with regard to each basic shift amount candidate group having a basic shift amount from 0 to N?1, a transmission control unit (206) specifies the actual shift amount imparted to a cyclic shift sequence used in scrambling a reference signal transmitted from each antenna port, said specification being performed based on a table in which cyclic shift amount candidates correspond to each antenna port, and based on setting information transmitted from a base station (100). With regard to basic shift amount candidates for shift amount X, the table differentiates between an offset pattern comprising offset values for cyclic shift amount candidates corresponding to each antenna port and an offset pattern corresponding to basic shift amount candidates of X+N/2.

Abstract: Disclosed is a wireless communication device that can suppress an increase in power consumption of a terminal while preventing the degradation of SINR measurement precision resulting from TPC errors in a base station. A terminal controls the transmission power of a second signal by adding an offset to the transmission power of a first signal; an offset-setting unit sets an offset correction value in response to a transmission time gap between a third signal transmitted the previous time and the second signal transmitted this time; and a transmission power control unit controls the transmission power of the second signal using the correction value.

Abstract: The present invention relates to a pharmaceutical composition comprising a population of cells including irradiated hematopoietic stem cells, and a method for producing the pharmaceutical composition, specifically, a pharmaceutical composition for treating an ischemic disease, comprising a population of cells including irradiated hematopoietic stem cells, wherein the irradiation is irradiation at 50 Gy or less, and a method for producing the pharmaceutical composition.

Abstract: Apparatuses and systems for providing multiple structures to enable flexibility of a multiple transmission and reception point ultra-reliable low-latency communication (M-TRP URLLC) operation and reduce measurement effort and power consumption from a transceiving apparatus such as a UE are provided. The techniques disclosed here feature a transceiving apparatus including a transceiver and circuitry. The transceiver, in operation, receives signals from multiple transmission and reception points (M-TRPs) in a network on at least physical downlink shared channels (PDSCHs). The circuitry, in operation, performs beam failure recovery (BFR) by evaluating beam failure detection (BFD) and candidate new beam detection (CBD) for the signals from at least a first one of the M-TRPs.

Abstract: A coating device includes: a coating liquid holding part provided with an upper opening portion and a lower opening portion and holding a coating liquid that is supplied from a coating liquid supply part; and an annular body that is disposed inside the coating liquid holding part, through which a cylindrical body penetrating the upper opening portion and the lower opening portion of the coating liquid holding part penetrates, and in which the coating liquid held by the coating liquid holding part flows in from an upper side and flows out from a lower side with a relative movement to the cylindrical body, the annular body being installed to be relatively displaceable along an installation surface intersecting a direction of the relative movement with respect to the coating liquid holding part.

Abstract: Provided is a transmitter which improves the flexibility of SRS resource allocation without increasing the amount of signaling for notifying the cyclic shift amount. In the transmitter, with regard to each basic shift amount candidate group having a basic shift amount from 0 to N?1, a transmission control unit (206) specifies the actual shift amount imparted to a cyclic shift sequence used in scrambling a reference signal transmitted from each antenna port, said specification being performed based on a table in which cyclic shift amount candidates correspond to each antenna port, and based on setting information transmitted from a base station (100). With regard to basic shift amount candidates for shift amount X, the table differentiates between an offset pattern comprising offset values for cyclic shift amount candidates corresponding to each antenna port and an offset pattern corresponding to basic shift amount candidates of X+N/2.

Abstract: A first and a second substrate polishing apparatus and are provided with a film thickness sensor for measuring a film thickness of layer to be polished and polish the layer by pressing the substrate against a polishing pad. The first substrate polishing apparatus outputs difference between output value of the film thickness sensor when an underlayer is exposed and output value of the film thickness sensor when the substrate is not present, as a first offset value. The second substrate polishing apparatus has a storage unit that stores information of the first offset value, an output correction unit that corrects the output value from the film thickness sensor based on the first offset value, and an end point detection unit that outputs control signal indicating end point of substrate polishing when measured value of the film thickness of the layer calculated based on the corrected output value reaches target value.

Abstract: A design method of a semiconductor manufacturing apparatus which can satisfy a specification required by a user is disclosed. The design method of the semiconductor manufacturing apparatus includes creating a program setting file; creating a program installer from the program setting file; operating a processing unit of the semiconductor manufacturing apparatus; specifying a sensor corresponding to the processing unit based on the operation of the processing unit; creating a sensor setting file storing information obtained by specifying the sensor; comparing a content of a requirement specification and a content of the sensor setting file to confirm a consistency between the content of the requirement specification and the content of the sensor setting file; and introducing a program into a memory of a controller by the program installer when the content of the requirement specification and the content of the sensor setting file are consistent with each other.

Abstract: A first and a second substrate polishing apparatus and are provided with a film thickness sensor for measuring a film thickness of layer to be polished and polish the layer by pressing the substrate against a polishing pad. The first substrate polishing apparatus outputs difference between output value of the film thickness sensor when an underlayer is exposed and output value of the film thickness sensor when the substrate is not present, as a first offset value. The second substrate polishing apparatus has a storage unit that stores information of the first offset value, an output correction unit that corrects the output value from the film thickness sensor based on the first offset value, and an end point detection unit that outputs control signal indicating end point of substrate polishing when measured value of the film thickness of the layer calculated based on the corrected output value reaches target value.

Abstract: A polishing apparatus of the present disclosure polishes a polishing target by pressing the polishing target against a polishing pad. An eddy current sensor measures an impedance that is changeable according to a change of a film thickness of the polishing target, at a plurality of positions of the polishing target, and outputs measurement signals. A difference calculator generates data corresponding to a film thickness based on a measurement signal. The difference calculator calculates a difference between data at different times based on measurement signals output by the eddy current sensor at different times at a center of the polishing target. An end point detector detects a polishing end point indicating the end of polishing based on the difference calculated by the difference calculator.

Abstract: A design method of a semiconductor manufacturing apparatus which can satisfy a specification required by a user is disclosed. The design method of the semiconductor manufacturing apparatus includes creating a program setting file; creating a program installer from the program setting file; operating a processing unit of the semiconductor manufacturing apparatus; specifying a sensor corresponding to the processing unit based on the operation of the processing unit; creating a sensor setting file storing information obtained by specifying the sensor; comparing a content of a requirement specification and a content of the sensor setting file to confirm a consistency between the content of the requirement specification and the content of the sensor setting file; and introducing a program into a memory of a controller by the program installer when the content of the requirement specification and the content of the sensor setting file are consistent with each other.

Abstract: A polishing apparatus of the present disclosure polishes a polishing target by pressing the polishing target against a polishing pad. An eddy current sensor measures an impedance that is changeable according to a change of a film thickness of the polishing target, at a plurality of positions of the polishing target, and outputs measurement signals. A difference calculator generates data corresponding to a film thickness based on a measurement signal. The difference calculator calculates a difference between data at different times based on measurement signals output by the eddy current sensor at different times at a center of the polishing target. An end point detector detects a polishing end point indicating the end of polishing based on the difference calculated by the difference calculator.

Abstract: A method monitors a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor includes two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor.

Abstract: A polishing method polishes and planarizes a substrate. The substrate is pressed against a polishing surface on a rotating polishing table. During polishing, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor is monitored, and substrate damage is detected from a change in the output of the eddy current sensor. Further, an output of an end point detecting sensor obtained by scanning the surface of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor. After detecting the polishing end point, an output of the end point detecting sensor or another sensor is monitored, and detecting a film left on a part of the substrate is performed.

Abstract: A method monitors a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.

Abstract: The present invention relates to a polishing method and apparatus for polishing and planarizing an object to be polished (substrate) such as a semiconductor wafer. The substrate as an object to be polished is pressed against a polishing surface on a rotating polishing table in the polishing method. During polishing of the substrate, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor obtained by scanning the surface, being polished, of the substrate is monitored, and damage of the substrate is detected from a change in the output of the eddy current sensor. Further, an output of an endpoint detecting sensor obtained by scanning the surface, being polished, of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor.

Abstract: The present invention provides a method of monitoring a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.

Abstract: The present invention provides a method for monitoring a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor comprises two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor.

Abstract: An information retrieval system whereby identical search results can be derived irrespective of the kind of DBMS or OS. A keyword normalizing device normalizes a keyword transmitted from a client through a network. A normalized data searching device then searches normalized data in a data storage section for data corresponding to the normalized keyword, and supplies the data to source data acquiring device. The source data acquiring device acquires source data associated with the normalized data supplied thereto, from among source data in the data storage section, and supplies the acquired source data to a sorting device. The sorting device first sorts the normalized data and then the source data in order of the sorted normalized data, and supplies the resulting source data to a source data supply device. The source data supply device transmits the source data to the client through the network.

Abstract: An information processing system for normalizing an input character string and storing the normalized character string is provided whereby the required storage capacity can be cut down. Normalizing means normalizes an input character string, for example, , and generates , which is then supplied to restoration information generating means and storing means. The restoration information generating means is supplied also with the original character string , besides the normalized character string , and generates restoration information “F@&” consisting of ASCII characters, which is supplied to storing means. The storing means stores the normalized character string and the restoration information “F@&” in a manner associated with each other.