Patents by Inventor Akihiko SHIBUKAWA

Akihiko SHIBUKAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200357882
    Abstract: A semiconductor device includes: a drift layer of a first conductivity type which is made of silicon carbide; a junction region formed on one main surface of the drift layer; a junction termination extended region of the drift layer, the junction termination extended region being formed outside the junction region when the one main surface is viewed in plan view, and the junction termination extended region containing an impurity of a second conductivity type opposite to the first conductivity type; and a guard ring region of the drift layer, the guard ring region being formed at a position overlapping the junction termination extended region when the one main surface is viewed in plan view, and the guard ring region containing the impurity of the second conductivity type with a concentration that is higher than that of the junction termination extended region, wherein in the junction termination extended region, the concentration of the impurity of the second conductivity type in a depth direction from the o
    Type: Application
    Filed: February 13, 2018
    Publication date: November 12, 2020
    Inventors: Akihiko SHIBUKAWA, Yusuke MAEYAMA, Shunichi NAKAMURA
  • Patent number: 9960228
    Abstract: A wide gap semiconductor device comprises a first conductive-type semiconductor layer (32); a second conductive-type region (41), (42) that is provided on the first conductive-type semiconductor layer (32); a first electrode (1), of which a part is disposed on the second conductive-type region (41), (42) and the other part is disposed on the first conductive-type semiconductor layer (32); an insulating layer (51), (52), (53) that is provided adjacent to the first electrode (10) on the first conductive-type semiconductor layer (32) and that extends to an end part of the wide gap semiconductor device; and a second electrode (20) that is provided between the first electrode (10) and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer (32).
    Type: Grant
    Filed: August 27, 2015
    Date of Patent: May 1, 2018
    Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Yusuke Maeyama, Shunichi Nakamura, Atsushi Ogasawara, Ryohei Osawa, Akihiko Shibukawa
  • Publication number: 20170263697
    Abstract: A wide gap semiconductor device comprises a first conductive-type semiconductor layer (32); a second conductive-type region (41), (42) that is provided on the first conductive-type semiconductor layer (32); a first electrode (1), of which a part is disposed on the second conductive-type region (41), (42) and the other part is disposed on the first conductive-type semiconductor layer (32); an insulating layer (51), (52), (53) that is provided adjacent to the first electrode (10) on the first conductive-type semiconductor layer (32) and that extends to an end part of the wide gap semiconductor device; and a second electrode (20) that is provided between the first electrode (10) and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer (32).
    Type: Application
    Filed: August 27, 2015
    Publication date: September 14, 2017
    Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
    Inventors: Yusuke MAEYAMA, Shunichi NAKAMURA, Atsushi OGASAWARA, Ryohei OSAWA, Akihiko SHIBUKAWA