Abstract: A heat-transfer member (1) is used in a cooling system in which an alcohol serves as a coolant. The heat-transfer member (1) has: a heat-receiving surface (11) configured such that it can receive heat from a heat-generating body; and a heat-dissipating surface (12) configured such that it can dissipate, to the coolant, the heat received at the heat-receiving surface (11). The heat-dissipating surface (12) has a plurality of pores (121) whose average pore diameter is 5 nm or more and 1,000 nm or less. A cooling system can be configured by causing the coolant to contact the heat-dissipating surface (12) of the heat-transfer member (1).

Abstract: A semiconductor device includes: first and second semiconductor elements each having two electrodes respectively disposed on two surfaces; two first terminals respectively connected to the two electrodes of the first semiconductor element and arranged side by side in one direction; two second terminals respectively connected to the two electrodes of the second semiconductor element, and arranged side by side in the one direction to be adjacent to the two first terminals; and a sealing resin portion covering the first and second semiconductor elements and the first and second terminals in a state where facing surfaces of the first and second terminals are exposed from the sealing resin portion. The facing surfaces of the two first terminals have different area ratios, the facing surfaces of the two second terminals have different area ratios, and one of the first terminals is arranged adjacent to both the two second terminals.

Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

Abstract: The aluminum member of the present disclosure includes a mother material containing aluminum or an aluminum alloy, and an anodic oxide film on the surface of the mother material, in which the arithmetical mean roughness Ra, the mean length of roughness curve elements RSm, and the Hunter whiteness of the aluminum member, measured from the surface side of the anodic oxide film, are 0.1 ?m or more, 10 ?m or less, and 60 to 90, respectively.

Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

Abstract: A solar power conditioner includes: a synchronous controller; and electric power converters connected in series with each other and arranged at panel groups, respectively. Each electric power converter executes a MPPT control for tracking a maximum power point of an output electric power of the panel group, and converts a voltage and a current of the output electric power of the panel group. The synchronous controller synchronously controls the electric power converters to superimpose converted voltages in series, the converted voltages outputting from the electric power converters, so that the electric power converters output a predetermined pseudo sine wave voltage or a predetermined alternating current voltage.

Abstract: An electric device includes: a first electric element; a second electric element capable of flowing large current therethrough so that heat is generated in the second electric element; a heat sink; and a first wiring board and a second wiring board, which are disposed on one side of the heat sink. The large current in the second electric element is larger than that in the first electric element. The first wiring board and the second wiring board are separated each other. The first electric element is disposed on the first wiring board, and the second electric element is disposed on the second wiring board.

Abstract: An electric device includes: a first electric element; a second electric element capable of flowing large current therethrough so that heat is generated in the second electric element; a heat sink; and a first wiring board and a second wiring board, which are disposed on one side of the heat sink. The large current in the second electric element is larger than that in the first electric element. The first wiring board and the second wiring board are separated each other. The first electric element is disposed on the first wiring board, and the second electric element is disposed on the second wiring board.

Abstract: A semiconductor device has a case, a printed circuit board, a fin, and a ceramic substrate mounting a semiconductor element thereon. The case contains the printed circuit board, the ceramic substrate and the fin. The fin and the case radiate heat transmitted from the ceramic substrate. The fin has protrusions on a contact face facing a contact face of the case. The fin contacts the case though the protrusions when the fin is fixed to the case. The protrusions serve as heat radiating path.

Abstract: A semiconductor device has a case, a printed circuit board, a fin, and a ceramic substrate mounting a semiconductor element thereon. The case contains the printed circuit board, the ceramic substrate and the fin. The fin and the case radiate heat transmitted from the ceramic substrate. The fin has protrusions on a contact face facing a contact face of the case. The fin contacts the case though the protrusions when the fin is fixed to the case. The protrusions serve as heat radiating path.

Abstract: A magnetron comprises an anode with an anode axis and an antenna terminal disposed along an antenna axis. The antenna axis is offset from and parallel to the anode axis. A cooling element surrounds the anode for cooling the anode. The outermost periphery of the cooling element which forms the overall shape of the magnetron has a longitudinal center axis disposed coaxially along the antenna axis to permit the adaptability of the magnetron to substantially all types of oven waveguides.