Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

Abstract: A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

Abstract: In a method of producing a group III nitride crystal in which a melt holding vessel where a melt containing a group III metal and flux is held is accommodated in a reaction vessel and a group III nitride crystal is produced as a substance containing nitrogen is supplied from an outside to the reaction vessel through a pipe, the method includes a step of forming an accumulated part of a liquid in the pipe to thereby temporarily close the pipe before growing the group III nitride crystal in the melt holding vessel.

Abstract: A disclosed magnetic sensor includes a substrate having a plane surface and multiple sloping surfaces; multiple soft magnetic films each disposed on a different one of the sloping surfaces and magnetized according to strength of a magnetic field; and multiple detecting devices each disposed on the plane surface, including a free layer and a pinned layer and configured to produce a detection output according to magnetization of the free layer and the pinned layer. Each of the soft magnetic films is magnetically coupled with the free layer of a different one of the detecting devices. The pinned layers of the detecting devices have magnetization directions different from each other.

Abstract: In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.

Abstract: A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

Abstract: A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

Abstract: A magnetic sensor including sensor bridge circuits, each including a pair of magnetic field detectors and a pair of fixed resistors. The magnetic field detectors in each bridge circuit are located on the same inclined surface, while the fixed resistors are each located on a different inclined surface. The inclined surface configuration reduces the number of fabrication steps necessary to fabricate the magnetic sensor.

Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

Abstract: In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.

Abstract: A sensor module maintaining high detection accuracy. Correction data of a detected magnetic field is updated only in a case that a fluctuation band acquired from an output signal of an acceleration sensor is less than a threshold value and a difference between an azimuth angle acquired from an output signal of a terrestrial magnetism sensor and an inclination angle acquired from an output signal of acceleration sensor is less than the threshold value. Therefore, the correction data is updated only in a case that a magnetic field at a position of a mobile object is stably detected, and an accuracy of the correction data can be maintained.

Abstract: In a method of producing a group III nitride crystal in which a melt holding vessel where a melt containing a group III metal and flux is held is accommodated in a reaction vessel and a group III nitride crystal is produced as a substance containing nitrogen is supplied from an outside to the reaction vessel through a pipe, the method includes a step of forming an accumulated part of a liquid in the pipe to thereby temporarily close the pipe before growing the group III nitride crystal in the melt holding vessel.

Abstract: A disclosed magnetic sensor includes a substrate having a plane surface and multiple sloping surfaces; multiple soft magnetic films each disposed on a different one of the sloping surfaces and magnetized according to strength of a magnetic field; and multiple detecting devices each disposed on the plane surface, including a free layer and a pinned layer and configured to produce a detection output according to magnetization of the free layer and the pinned layer. Each of the soft magnetic films is magnetically coupled with the free layer of a different one of the detecting devices. The pinned layers of the detecting devices have magnetization directions different from each other.

Abstract: A magnetic sensor is disclosed that has plural axes at the same time, able to be fabricated in a small number of steps. The magnetic sensor includes a substrate; and plural sensor bridge circuits each including a pair of magnetic field detectors and a pair of fixed resistors on the substrate, the pair of the magnetic field detectors and the pair of the fixed resistors being connected to form a bridge circuit, each of the magnetic field detectors being formed of a magneto-resistance effect element, and magnetization directions of the magnetic field detectors intersect with each other in a three-dimensional manner. The substrate has plural inclined surfaces, normal directions of the inclined surfaces intersect with each other in a three-dimensional manner, and the pair of the magnetic field detectors in each of the sensor bridge circuits is arranged on the same inclined surface.

Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.

Abstract: A sensor module maintaining high detection accuracy. Correction data of a detected magnetic field is updated only in a case that a fluctuation band acquired from an output signal of an acceleration sensor is less than a threshold value and a difference between an azimuth angle acquired from an output signal of a terrestrial magnetism sensor and an inclination angle acquired from an output signal of acceleration sensor is less than the threshold value. Therefore, the correction data is updated only in a case that a magnetic field at a position of a mobile object is stably detected, and an accuracy of the correction data can be maintained.

Abstract: In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.