Abstract: Provided is a novel nucleic acid molecule that can be produced easily and efficiently and can inhibit the expression of a gene. The nucleic acid molecule is a single-stranded nucleic acid molecule including an expression inhibitory sequence that inhibits expression of a target gene. The single-stranded nucleic acid molecule includes: a region (X); a linker region (Lx); and a region (Xc). The linker region (Lx) is linked between the regions (Xc) and (Xc). The region (Xc) is complementary to the region (X). At least one of the regions (X) and (Xc) includes the expression inhibitory sequence. The linker region (Lx) has a non-nucleotide structure including at least one of a pyrrolidine skeleton and a piperidine skeleton. According to this single-stranded nucleic acid molecule, it is possible to inhibit the expression of the target gene.

Abstract: A vehicle braking apparatus is provided with a brake operating element that is operated by a driver, and an actuator that generates a braking force in accordance with a braking operation of the brake operating element. A controller is operatively arranged to control the actuator such that an increase in a rate of change of the braking force with respect to the braking operation by the driver is suppressed upon determining that vehicle cabin background noise is equal to or below a prescribed threshold value.

Abstract: Provided is a novel nucleic acid molecule that can inhibit the expression of a gene and can be produces easily and efficiently. The nucleic acid molecule is a single-stranded nucleic acid molecule including an expression inhibitory sequence that inhibits expression of a target gene. The single-stranded nucleic acid molecule includes, in sequence from the 5? side to the 3? side: a 5? side region (Xc); an inner region (Z); and a 3? side region (Yc). The inner region (Z) is composed of an inner 5? side region (X) and an inner 3? side region (Y) that are linked to each other. The 5? side region (Xc) is complementary to the inner 5? side region (X). The 3? side region (Yc) is complementary to the inner 3? side region (Y). At least one of the inner region (Z), the 5? side region (Xc), and the 3? side region (Yc) includes the expression inhibitory sequence. According to this single-stranded nucleic acid molecule, it is possible to inhibit the expression of the target gene.

Abstract: A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction crossing the first direction, are formed with generally equal interval in the first direction.

Abstract: A regenerative braking coordination device has a braking operating member receiving an input from a driver in the form of an operation amount, an input shaft operable for transmitting the operation amount, and a braking force boosting device operable to generate a hydraulic braking pressure corresponding to the operation amount transmitted by the input shaft. The device further includes a hydraulic pressure braking device to generate a braking force and an operation amount absorber for absorbing the operation amount of the input shaft. The operation amount absorber includes a cylinder, a piston dividing the interior of the cylinder into first and second hydraulic chambers and an orifice connecting the first and second hydraulic chambers. The orifice can be in the piston or in a flow channel.

Abstract: A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.

Abstract: A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.

Abstract: A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: A surface-emission laser diode of a vertical-cavity surface-emission laser structure includes a substrate and a mesa structure formed on the substrate, the mesa structure including therein a current confinement structure, wherein the current confinement structure includes a conductive current confinement region and an insulation region surrounding the conductive current confinement region, the insulation region being an oxide of a semiconductor material forming the conductive current confinement region, and wherein a center of the current confinement region is offset from a center of the mesa structure in a plane perpendicular to a laser oscillation direction.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: Disclosed is a method for manufacturing a surface-emitting laser device that emits laser light in a direction perpendicular to a substrate. The method includes manufacturing a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting mirror including a selectively oxidized layer are laminated on the substrate; etching the laminated body from an upper surface to form a mesa structure having at least the selectively oxidized layer exposed at a side surface; and mounting the laminated body on a tray having a front surface shaped to follow a warpage of the laminated body at an oxidation temperature and selectively oxidizing the selectively oxidized layer from the side surface of the mesa structure, thereby generating a confinement structure in which a current passing region is surrounded by an oxide.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A disclosed surface emitting laser is capable of being manufactured easily, having a higher yield and a longer service lifetime. In the surface emitting laser, a selectively-oxidized layer is included as a part of a low refractive index layer of an upper semiconductor distribution Bragg reflector; the low refractive index layer including the selectively-oxidized layer includes two intermediate layers adjoining the selectively-oxidized layer and two low refractive index layers adjoining the intermediate layers. Al content rate in the intermediate layers is lower than that in the selectively-oxidized layer, and Al content rate in the low refractive index layers is lower than that in the selectively-oxidized layer. This configuration enables providing more control over the thickness and oxidation rate of the oxidized layer, thereby enabling reducing the variation of the thickness of the oxidized layer.

Abstract: A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of AlxGa1-xAs (0<x?1) and a layer of large refractive index of AlyGa1-yAs (0?y<x?1), the lower reflector is formed of a first lower reflector having a low-refractive index layer of AlAs an

Abstract: A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of AlxGa1-xAs (0<x?1) and a layer of large refractive index of AlyGa1-yAs (0?y<x?1), the lower reflector is formed of a first lower reflector having a low-refractive index layer of AlAs an

Abstract: A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.