Abstract: A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62) opposing each other. A first electrode (21) and a second electrode (31) are arranged on the first and second main faces, respectively. A film made of silicon oxide (10) is also formed on the first main face so as to cover the first electrode. A glass substrate (1) optically transparent to the light generated by the multilayer structure is secured to the multilayer structure through the film made of silicon oxide.

Abstract: A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

Abstract: A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

Abstract: The present invention relates to a semiconductor photodetector and the like that can be made adequately compact while maintaining mechanical strength. The semiconductor photodetector includes a structural body of layers and a glass substrate. The structural body of layers is arranged from an antireflection film, a high-concentration carrier layer of an n-type (first conductive type), a light absorbing layer of the n-type, and a cap layer of the n-type that are laminated successively. The glass substrate is adhered via a silicon oxide film onto the antireflection film side of the structural body of layers. The glass substrate is optically transparent to incident light.

Abstract: A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62) opposing each other. A first electrode (21) and a second electrode (31) are arranged on the first and second main faces, respectively. A film made of silicon oxide (10) is also formed on the first main face so as to cover the first electrode. A glass substrate (1) optically transparent to the light generated by the multilayer structure is secured to the multilayer structure through the film made of silicon oxide.

Abstract: A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62) opposing each other. A first electrode (21) and a second electrode (31) are arranged on the first and second main faces, respectively. A film made of silicon oxide (10) is also formed on the first main face so as to cover the first electrode. A glass substrate (1) optically transparent to the light generated by the multilayer structure is secured to the multilayer structure through the film made of silicon oxide.

Abstract: A semiconductor light-emitting device comprises a multilayer structure and a glass substrate. The multilayer structure includes a plurality of laminated compound semiconductor layers and generates light. The multilayer structure has a light exit face for emitting the generated light, whereas the glass substrate optically transparent to the light is bonded to the light exit face by a film made of silicon oxide.

Abstract: A soundproof material is provided with a first sound absorbing layer arranged on a vehicle panel, a second sound absorbing layer closer to an inner side of a passenger compartment, and an intermediate layer provided between the sound absorbing layers. The intermediate layer is constituted by two layers having a high-density layer and a low-density layer. The air permeability of the intermediate layer is set lower than the first sound absorbing layer and the second sound absorbing layer. The intermediate layer is arranged in such a manner that the high-density layer is adjacent to the second sound absorbing layer.

Abstract: A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

Abstract: The present invention provides a fender liner and a method for producing the same that allows reduction of noise caused by collision with pebbles etc. kicked by tires, that has sufficient rigidity, and that allows easier separation of attached ice. The fender liner comprises a low density nonwoven fabric layer, disposed on a side of the outside surface when it is attached to the outside surface, and a high density nonwoven fabric layer, the density of which is 0.6 to 0.9 g/cm3, in a thickness direction. The method comprises: obtaining a compound nonwoven fabric by intertwining and integrating a first and a second nonwoven fabric having predetermined amounts of mass per unit area and thicknesses respectively by a needle punching method; obtaining a nonwoven fabric laminated product for liners by heating the fabric from a side of the first nonwoven fabric layer with simultaneous pressurization; and die forming the product.

Abstract: A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62) opposing each other. A first electrode (21) and a second electrode (31) are arranged on the first and second main faces, respectively. A film made of silicon oxide (10) is also formed on the first main face so as to cover the first electrode. A glass substrate (1) optically transparent to the light generated by the multilayer structure is secured to the multilayer structure through the film made of silicon oxide.

Abstract: A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

Abstract: The present invention relates to a semiconductor photodetector and the like that can be made adequately compact while maintaining mechanical strength. The semiconductor photodetector includes a structural body of layers and a glass substrate. The structural body of layers is arranged from an antireflection film, a high-concentration carrier layer of an n-type (first conductive type), a light absorbing layer of the n-type, and a cap layer of the n-type that are laminated successively. The glass substrate is adhered via a silicon oxide film onto the antireflection film side of the structural body of layers. The glass substrate is optically transparent to incident light.

Abstract: A semiconductor light-emitting device comprises a multilayer structure and a glass substrate. The multilayer structure includes a plurality of laminated compound semiconductor layers and generates light. The multilayer structure has a light exit face for emitting the generated light, whereas the glass substrate optically transparent to the light is bonded to the light exit face by a film made of silicon oxide.

Abstract: A soundproof material is provided with a first sound absorbing layer arranged on a vehicle panel, a second sound absorbing layer closer to an inner side of a passenger compartment, and an intermediate layer provided between the sound absorbing layers. The intermediate layer is constituted by two layers having a high-density layer and a low-density layer. The air permeability of the intermediate layer is set lower than the first sound absorbing layer and the second sound absorbing layer. The intermediate layer is arranged in such a manner that the high-density layer is adjacent to the second sound absorbing layer.

Abstract: An automatic valve seat build-up welding apparatus for a Y-type main steam isolation globe valve used in an atomic power station is disclosed which is characterized in that the valve seat can be build-up welded on the spot by the welding torch introduced into the valve box with the welding operation being carried out remotely from the spot and viewed by an image sensor positioned near the welding torch so that the exposure of an operator to a radioactive environment is prevented.