Patents by Inventor Akio Aioi

Akio Aioi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor light-emitting device providing efficient light extraction
    Patent number: 7893446
    Abstract: A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.
    Type: Grant
    Filed: January 29, 2008
    Date of Patent: February 22, 2011
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Atsushi Ogawa, Akio Aioi, Satoshi Komada, Hiroshi Nakatsu
  • NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
    Publication number: 20080179608
    Abstract: A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.
    Type: Application
    Filed: January 29, 2008
    Publication date: July 31, 2008
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Atsushi Ogawa, Akio Aioi, Satoshi Komada, Hiroshi Nakatsu
  • Semiconductor light emitting device having gallium nitride based compound semiconductor layer
    Patent number: 6822270
    Abstract: The semiconductor light emitting device has a gallium nitride base compound semiconductor layer expressed by a general formula of InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1). A second intermediate layer is provided between a GaN layer and a light emitting layer, and the second intermediate layer has a lattice constant closer to that of the light emitting layer than that of the GaN layer. As such, when a substrate such as Si substrate having a smaller coefficient of thermal expansion than the nitride semiconductor film is employed, occurrence of cracks is prevented and good crystallinity of the nitride semiconductor film is assured, and accordingly, a long-life and high-luminance nitride base semiconductor light emitting device is obtained.
    Type: Grant
    Filed: February 7, 2003
    Date of Patent: November 23, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Norikatsu Koide, Akio Aioi, Takeshi Nishino
  • Semiconductor light emitting device
    Publication number: 20030173574
    Abstract: The semiconductor light emitting device has a gallium nitride base compound semiconductor layer expressed by a general formula of InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1). A second intermediate layer is provided between a GaN layer and a light emitting layer, and the second intermediate layer has a lattice constant closer to that of the light emitting layer than that of the GaN layer. As such, when a substrate such as Si substrate having a smaller coefficient of thermal expansion than the nitride semiconductor film is employed, occurrence of cracks is prevented and good crystallinity of the nitride semiconductor film is assured, and accordingly, a long-life and high-luminance nitride base semiconductor light emitting device is obtained.
    Type: Application
    Filed: February 7, 2003
    Publication date: September 18, 2003
    Inventors: Norikatsu Koide, Akio Aioi, Takeshi Nishino