Abstract: A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.

Abstract: A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.

Abstract: A magnetic head using magnetoresistive effect comprising a magnetic sensing portion formed of a magnetoresistive effect element. The magnetic sensing portion includes a lamination layer structure portion which includes at least a free layer, a fixed layer made of a ferromagnetic material, an antiferromagnetic layer and a spacer layer interposed between the free layer and the fixed layer are laminated with each other. The lamination layer structure portion includes a magnetic flux introducing layer. The lamination layer structure portion has at its lamination layer direction opposing side surfaces formed of one flat surface or continuous one curved surface over at least the free layer, the spacer layer and the fixed layer. A hard magnetic layer for maintaining a magnetic stability of the free layer is disposed in direct contact with the opposing surfaces or through an insulating layer.

Abstract: A method of manufacturing a magnetic head including a magnetic sensing portion formed of a magnetoresistive effect element, a magnetoresistive effect magnetic head manufacturing method depositing, via a film deposition process, a lamination layer having a free layer comprised of a soft magnetic material of which the magnetization is rotated in response to an external magnetic field, a fixed layer comprised of a ferromagnetic material, an antiferromagnetic layer for fixing the magnetization of said fixed layer, a magnetic flux introducing layer with a tip end of which is opposed to a surface which is brought in contact with or opposed to a magnetic recording medium, and a spacer layer interposed between said free layer and said fixed layer; patterning at least said free layer and said fixed layer with a mask such that opposing side surfaces of said free layer and said fixed layer are formed of one continuous surface; and forming hard magnetic layers having high or low resistance for maintaining a magnetic stab

Abstract: The battery charging detects battery temperature and includes a temperature maintaining charging operation wherein average charging current is controlled to drive battery temperature to a holding temperature, and charging is performed while maintaining battery temperature at that holding temperature. In addition, a temperature increasing charging operation occurs prior to the temperature maintaining charging operation. The battery is charged with a current which raises battery temperature until the holding temperature is reached. When battery temperature rises to the holding temperature in the temperature increasing charging operation, charging can transition to the temperature maintaining charging operation.

Abstract: A magneto-resistive effect element body 11 and a hard magnetic layer 12 for applying a bias magnetic field are disposed between opposing first and second magnetic shields 21 and 22, each made of a soft magnetic material. This magneto-resistive effect element body 11 is comprised of a lamination layer structure portion in which there are laminated at least a free layer the magnetization of which is rotated in response to an external magnetic field, a fixed layer, an antiferromagnetic layer for fixing the magnetization of the fixed layer and a spacer layer interposed between the free layer and the fixed layer. Then, the magneto-resistive effect element has a CPP type configuration in which a sense current flows to the magneto-resistive effect element body in the direction intersecting the film plane of the lamination layer film.

Abstract: A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.

Abstract: The battery charging method detects battery temperature and comprises a temperature maintaining charging step wherein average charging current is controlled to drive battery temperature to a holding temperature, and charging is performed while maintaining battery temperature at that holding temperature. In addition, a temperature increasing charging step is provided prior to the temperature maintaining charging step. The battery is charged with a current which raises battery temperature until the holding temperature is reached. When battery temperature rises to the holding temperature in the temperature increasing charging step, charging can transition to the temperature maintaining charging step.

Abstract: A magnetic head using magneto-resistive effect includes a spin-valve type giant magneto-resistive effect element or tunnel-type magneto-resistive effect element type lamination layer structure portion in which a free layer 4 made of a soft magnetic material of which the magnetization is rotated in response to an external magnetic field, a fixed layer 6 made of a ferromagnetic material, an antiferromagnetic layer 7 for fixing the magnetization of this fixed layer 6 and a spacer layer 5, i.e., nonmagnetic conductive layer or a tunnel barrier layer are laminated with each other.

Abstract: A waveguide optical switch has a waveguide whose refractive index changes can be controlled by an electro-optic effect and an UV guide waveguide for coupling an ultraviolet radiation to the waveguide. A portion of the waveguide and a portion of the UV guide waveguide make up a directional coupler.

Abstract: A magneto-resistive effect element body 11 and a hard magnetic layer 12 for applying a bias magnetic field are disposed between opposing first and second magnetic shields 21 and 22, each made of a soft magnetic material. This magneto-resistive effect element body 11 is comprised of a lamination layer structure portion in which there are laminated at least a free layer the magnetization of which is rotated in response to an external magnetic field, a fixed layer, an antiferromagnetic layer for fixing the magnetization of the fixed layer and a spacer layer interposed between the free layer and the fixed layer. Then, the magneto-resistive effect element has a CPP type configuration in which a sense current flows to the magneto-resistive effect element body in the direction intersecting the film plane of the lamination layer film.

Abstract: A magnetic head using magneto-resistive effect includes a spin-valve type giantmagneto-resistive effect element or tunnel-typemagneto-resistive effect element type lamination layer structure portion in which a free layer 4 made of a soft magnetic material of which the magnetization is rotated in response to an external magnetic field, a fixed layer 6 made of a ferromagnetic material, an antiferromagnetic layer 7 for fixing the magnetization of this fixed layer 6 and a spacer layer 5, i.e., nonmagnetic conductive layer or a tunnel barrier layer are laminated with each other.

Abstract: A waveguide optical switch has a waveguide whose refractive index changes can be controlled by an electro-optic effect and an UV guide waveguide for coupling an ultraviolet radiation to the waveguide. A portion of the waveguide and a portion of the UV guide waveguide make up a directional coupler.

Abstract: There is provided a method of fabricating a semiconductor device including, a first conductivity type MOSFET, a second conductivity type MOSFET, and a power MOSFET having a high breakdown voltage, and having a drain offset region formed in the substrate between the drain region and a channel region located below the gate electrode, and containing first conductivity type impurities therein at such a concentration that carriers are depleted in an operation of the semiconductor device, the method including the steps, in sequence, of (a) forming gate electrodes on the substrate in first, second and third regions where the first conductivity type MOSFET, the second conductivity type MOSFET, and the power MOSFET are to be fabricated, respectively, (b) introducing first conductivity type impurities into the substrate at such a concentration that carriers are depleted in an operation of the semiconductor device, (c) introducing first conductivity type impurities into the substrate with both the second region and a re

Abstract: A stationary reflecting mirror (reflecting umbrella 2) is provided for reflecting light, emitted from a xenon discharge tube (3), to the side of an object to be photographed. An upper reflector plate (5) is provided above and in front of the stationary reflecting umbrella (2) and a lower reflector plate (6) is provided below and in front of the stationary reflecting umbrella (2). The upper and lower deflector plates (5, 6) are constructed so as to be pivoted in interlock with a change in the focal length of a photographic lens. With the upper and lower deflector plates (5, 6), part of light emitted from an opening (2A) is reflected and the direction of the reflected light that is emitted to the object is varied, and thereby the distribution angle of the light emitted to the object is varied. In this way, there is obtainable a flasher which is structurally simple and inexpensive without using high-performance lenses or an accurate moving mechanism.

Abstract: The plateau region of P-C-T isotherm of a hydrogen absorbing alloy between the .alpha. phase region and .beta. phase region thereof is expressed by a normal cumulative distribution function wherein hydrogen content X is taken as frequency and the logarithm of equilibrium hydrogen pressure as a random variable. Parameters such as standard deviation .sigma. of the function are determined by numerical analysis based on measured data as to the equilibrium hydrogen pressure and hydrogen content of the plateau region of the alloy to be evaluated. Whether the equilibrium characteristics of the alloy are acceptable is determined using the parameters as evaluation criteria.

Abstract: Three types of novel hydrogen-absorbing alloy electrodes A, B and C usable for metal hydride secondary batteries are provided. All three types are represented by the general formula AB.sub.x wherein A represents Ti or elements that principally comprise Ti and generate heat upon absorption of hydrogen, B represents Mo and Ni or elements that principally comprise Mo and Ni and absorb heat upon absorption of hydrogen and 0.5.ltoreq.X.ltoreq.2, and are readily producible and difficult to undergo cycle deterioration and need only short activation treatment time. (A) uses a hydrogen-absorbing alloy obtained by quenching and solidifying an alloy melt under an atmosphere of a reducing gas containing hydrogen at a cooling rate of at least 1.times.10.sup.3 .degree. C.

Abstract: A fuel cell system for directly converting chemical energy of a fuel into electric energy electrochemically. A fuel cell has a cathode and an anode. A main hydrogen absorbing alloy supplies hydrogen gas to the anode of the fuel cell during steady-state operation of the system. An auxiliary hydrogen absorbing alloy originally having a higher hydrogen gas absorbing/desorbing equilibrium pressure than the main hydrogen absorbing alloy at an equal temperature supplies hydrogen gas to the anode until the equilibrium pressure of the main hydrogen absorbing alloy, which is supplied an exhaust gas from the fuel cell is equal to a hydrogen gas absorbing/desorbing equilibrium pressure of the auxiliary hydrogen absorbing alloy, the auxiliary hydrogen absorbing alloy receiving the hydrogen gas from the main hydrogen absorbing alloy during steady-state operation.

Abstract: A hydrogen absorbing alloy having a crystal structure of CaCu.sub.5 -type hexagonal system and represented by the general formula Re.sub.1-x Y.sub.x (Ni.sub.5-y G.sub.y).sub.z wherein Re is one of La, Ce, Nd, Pr, misch metal and lanthanum-rich misch metal, Y is yttrium, Ni is nickel, and G is an element capable of forming an intermetallic compound or complete solid solution in corporation with Ni or a mixture of such elements, and x, y and z are in the ranges of 0<x.ltoreq.0.6, 0<y.ltoreq.1 and 0.8<z.ltoreq.1.2, respectively. This alloy has a high equilibrium hydrogen desorbing pressure at room temperature, a great capacity to absorb hydrogen and high durability to repeatedly absorb and desorb hydrogen.

Abstract: Disclosed is a hydrogen-absorbing alloy electrode including a hydrogen-absorbing alloy capable of absorbing and desorbing hydrogen reversibly, the electrode being characterized in that the hydrogen-absorbing alloy forms a multi-phase structure composed of at least these three phases, a main alloy phase, an alloy phase of Ti.sub.2 Ni system cubic-structure and an alloy phase of Ti-Ni system monoclinic-structure, and the main alloy phase has TiMo-based crystalline cubic-structure.