Abstract: A metal additive manufacturing technique is provided to improve various characteristics by irradiation of a pulse laser without disposing a transparent medium. A metal additive manufacturing device includes: a material supply source configured to supply a material to be deposited; a heat source configured to melt the material by outputting an energy beam; a moving driver configured to scan at least the energy beam; and a laser irradiator configured to irradiate a solidified portion of the material in a temperature lowering process with a pulse laser.

Abstract: An inexpensive bonding method is provided to bond materials constituted of an aluminum-based metal to each other at a low temperature and a low pressure while inhibiting deformation, without requiring the use of a flux and minimizing the influence on the base materials and the periphery. Also provided are various bonded parts obtained by the bonding method. An insert material comprising Zn as an element that undergoes a eutectic reaction with Al is interposed between two materials constituted of an aluminum-based metal. The two materials are heated, while being pressed against each other, to a temperature at which the eutectic reaction takes place, thereby generating, at the bonding interface between the two materials, a melt due to the eutectic reaction with some of the Al contained in the base materials and discharging the Al oxide films from the bonding interface together with the melt. Thus, the two materials are bonded.

Abstract: There is provided a reactive powder enabling a satisfactory and stable self-propagating high temperature synthesis (SHS) reaction. Also, there is provided a bonding material enabling reliable bonding, by using the reactive powder, while inhibiting thermal degradation of a joint member without depending on a surface shape to be bonded of the joint member. The reactive powder is a reactive powder enabling self-propagating high temperature synthesis including a first material and a second material that chemically react with each other, in which each grain constituting the reactive powder is in a state that first sub-grains made of the first material and second sub-grains made of the second material are disorderly mixed within the grain.

Abstract: An inexpensive bonding method is provided to bond materials constituted of an aluminum-based metal to each other at a low temperature and a low pressure while inhibiting deformation, without requiring the use of a flux and minimizing the influence on the base materials and the periphery. Also provided are various bonded parts obtained by the bonding method. An insert material comprising Zn as an element that undergoes a eutectic reaction with Al is interposed between two materials constituted of an aluminum-based metal. The two materials are heated, while being pressed against each other, to a temperature at which the eutectic reaction takes place, thereby generating, at the bonding interface between the two materials, a melt due to the eutectic reaction with some of the Al contained in the base materials and discharging the Al oxide films from the bonding interface together with the melt. Thus, the two materials are bonded.

Abstract: In joining a magnesium alloy material 1 (first material) and a steel material (second material), a zinc-plated steel plate 2 plated with zinc (metal C) is used as a steel material, Al (metal D) is added to the magnesium alloy material 1. Next, eutectic melting of Mg and Zn is caused so as to remove a product produced by the eutectic melting with an oxide film 1f and impurities from a joint interface. Moreover, an Al—Mg system intermetallic compound such as Al3Mg2 and an Fe—Al system intermetallic compound such as FeAl3 are produced, whereby regenerated surfaces of both materials 1 and 2 are joined via a compound layer 3 containing those intermetallic compounds.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: A carrying system includes first and second carrying machines each of which includes a holding unit, a base and a linkage having pivotally joined first and second links. The holding unit can be moved, by turning the second link relative to the first link which is turned relative to the base, along a substantially arc carrying route extending round the pedestal between a loading position and a processing position. The arc carrying route is closer to the pedestal with respect to an imaginary circle having its center on the pedestal and a radius corresponding to the distance between the pedestal and either of the loading position and the processing position.

Abstract: In joining a magnesium alloy material 1 (first material) and a steel material (second material), a zinc-plated steel plate 2 plated with zinc (metal C) is used as a steel material, Al (metal D) is added to the magnesium alloy material 1. Next, eutectic melting of Mg and Zn is caused so as to remove a product produced by the eutectic melting with an oxide film 1f and impurities from a joint interface. Moreover, an Al—Mg system intermetallic compound such as Al3Mg2 and an Fe—Al system intermetallic compound such as FeAl3 are produced, whereby regenerated surfaces of both materials 1 and 2 are joined via a compound layer 3 containing those intermetallic compounds.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys.

Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys.

Abstract: A carrying system includes first and second carrying machines each of which includes a holding unit, a base and a linkage having pivotally joined first and second links. The holding unit can be moved, by turning the second link relative to the first link which is turned relative to the base, along a substantially arc carrying route extending round the pedestal between a loading position and a processing position. The arc carrying route is closer to the pedestal with respect to an imaginary circle having its center on the pedestal and a radius corresponding to the distance between the pedestal and either of the loading position and the processing position.

Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: A coating method which reduces the nonuniformity of a sprayed coating film at an end portion of a moving workpiece. A spray gun moves along a locus in a direction transverse to a conveying direction of the workpiece. The dimensions of the workpiece and passage of an end portion of the workpiece past the spray gun are detected. A reduced amount of coating material is sprayed at an end portion of the workpiece in response to the determination of passage of the end portion past the spray gun in order to prevent an increase in thickness of the coating film at the end portion. In the case of electrostatic spraying, an increase in film thickness at the end portion can be prevented by reducing or nullifying the electrostatic voltage applied to the end portion of the workpiece.

Abstract: A device used in an apparatus, such as weigher, pressure gauge or the like, for essentially measuring a force, which utilizes a flexural member of elastic material for detecting the force by converting its deflection or strain caused by application of the force into an electric signal, and adapted to compensate for measurement error caused by a time-dependent change in the detection output as a result of creep and/or stress reluxation of the flexural member by removing error components by an electric circuit constructed in accordance with a principle of digital filter.

Abstract: Enclosed herein is a process for preparing chlororhodiumic acid which comprises dissolving rhodium or a rhodium containing mixture in hydrochloric acid by bubbling chlorine gas therein under heating and suspending the rhodium to provide the chlororhodiumic acid in the hydrochloric acid solution.According to the present invention, the dissolving reaction proceeds sufficiently at a high speed under the relatively moderate conditions and in a more simplified process than that of a prior art, to provide the chlororhodiumic acid in high yield. The chlorine gas can be removed from the hydrochloric acid solution easily, and if the chlorine gas is contaminated in the solution as a chlorine ion, the chlorine ion is already present in the hydrochloric acid solution so that the contaminated ion will never be recognized as impurities. Therefore, the high purity chlororhodiumic acid can be obtained.