Patents by Inventor Akira Fujinoki

Akira Fujinoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150353417
    Abstract: Provided are a quartz glass member for wavelength conversion that is high in environmental resistance, heat resistance, durability, and color rendering property, can be manufactured by a low temperature process, and can efficiently convert a wavelength, and a method of manufacturing the same. The quartz glass member for wavelength conversion includes: a quartz glass base material; and a quartz glass surface layer film formed on a surface of the quartz glass base material, in which: the quartz glass surface layer film is obtained by applying, onto the surface of the quartz glass base material, a polysilazane-containing solution containing fluorescent material particles having an average particle diameter of from 0.
    Type: Application
    Filed: December 25, 2014
    Publication date: December 10, 2015
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Tatsuya Mori, Tatsuhiro Sato, Akira Fujinoki
  • Patent number: 8635886
    Abstract: It is an object of the present invention to provide a copper-containing silica glass which emits fluorescence having a peak in a wavelength range of from 520 nm to 580 nm under irradiation of ultraviolet light with a wavelength of 400 nm or less, and which is excellent in long term stability even in the high output use. The copper-containing silica glass is made to have copper of from 5 wtppm to 200 wtppm, which emits fluorescence having a peak in a wavelength range of from 520 nm to 580 nm under irradiation of ultraviolet light with a wavelength ranging from 160 nm to 400 nm, and in which an internal transmittance per 2.5 mm thickness at a wavelength of 530 nm is 95% or more.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: January 28, 2014
    Assignees: Shin-Etsu Quartz Products Co., Ltd., Opto-Electronics Laboratory, Inc.
    Inventors: Tetsuji Ueda, Michinari Ohuchi, Hiroyuki Nishimura, Akira Fujinoki, Masahiro Nakatsuka, Hidetsugu Yoshida
  • Patent number: 8394731
    Abstract: Disclosed is a printed wiring board which attains aims of printed wiring boards required for realizing high-speed, high-frequency semiconductor devices, namely a printed wiring board having low dielectric constant, low dielectric loss tangent and low linear expansion coefficient. Also disclosed is a composite woven fabric suitably used as a base material for such a printed wiring board. Specifically disclosed is a composite woven fabric containing quartz glass fibers and polyolefin fibers, in which the ratio of the quartz glass fibers to the composite woven fabric is set at 10 vol % or more and 90 vol % or less. It is preferred that the quartz glass fibers each have a filament diameter of 3 ?m or more and 16 ?m or less, and the composite woven fabric has a thickness of 200 ?m or less.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: March 12, 2013
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Akira Sato, Akira Fujinoki, Hiroyuki Nishimura, Tsukasa Sakaguchi
  • Publication number: 20120291488
    Abstract: It is an object of the present invention to provide a copper-containing silica glass which emits fluorescence having a peak in a wavelength range of from 520 nm to 580 nm under irradiation of ultraviolet light with a wavelength of 400 nm or less, and which is excellent in long term stability even in the high output use. The copper-containing silica glass is made to have copper of from 5 wtppm to 200 wtppm, which emits fluorescence having a peak in a wavelength range of from 520 nm to 580 nm under irradiation of ultraviolet light with a wavelength ranging from 160 nm to 400 nm, and in which an internal transmittance per 2.5 mm thickness at a wavelength of 530 nm is 95% or more.
    Type: Application
    Filed: July 26, 2012
    Publication date: November 22, 2012
    Applicants: OPTO-ELECTRONICS LABORATORY, INC., SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Tetsuji Ueda, Michinari Ohuchi, Hiroyuki Nishimura, Akira Fujinoki, Masahiro Nakatsuka, Hidetsugu Yoshida
  • Patent number: 7841211
    Abstract: First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.
    Type: Grant
    Filed: November 28, 2003
    Date of Patent: November 30, 2010
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Tatsuhiro Sato, Takahiro Kaitou, Akira Fujinoki, Toshiyuki Kato, Tohru Segawa, Nobumasa Yoshida
  • Publication number: 20100251770
    Abstract: A process for producing a transparent or opaque silica glass product including mixing a silica fine powder and a cellulose derivative and injection molding the mixture, followed by degreasing treatment and baking treatment, which is characterized in that the cellulose derivative is a cellulose derivative which causes reversible thermal gelation in an aqueous solution of at least one member selected from methyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose; in producing a transparent silica glass product, the cellulose derivative is added in water heated at a gelation temperature thereof or higher, and after cooling, the formed aqueous solution is kneaded with the silica fine powder; and in producing an opaque silica glass product, the cellulose derivative is added in a silica slurry containing a silica powder and heated at a gelation temperature of the cellulose derivative or higher.
    Type: Application
    Filed: June 15, 2010
    Publication date: October 7, 2010
    Applicants: Shin-Etsu Quartz Products Co., Ltd., Shin-Etsu Chemical Co., Ltd.
    Inventors: Hiroyuki Watanabe, Akira Fujinoki, Takayuki Imaizumi, Kazuhisa Hayakawa, Shingo Niinobe
  • Patent number: 7790078
    Abstract: A process for producing a transparent or opaque silica glass product including mixing a silica fine powder and a cellulose derivative and injection molding the mixture, followed by degreasing treatment and baking treatment, which is characterized in that the cellulose derivative is a cellulose derivative which causes reversible thermal gelation in an aqueous solution of at least one member selected from methyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose; in producing a transparent silica glass product, the cellulose derivative is added in water heated at a gelation temperature thereof or higher, and after cooling, the formed aqueous solution is kneaded with the silica fine powder; and in producing an opaque silica glass product, the cellulose derivative is added in a silica slurry containing a silica powder and heated at a gelation temperature of the cellulose derivative or higher.
    Type: Grant
    Filed: February 9, 2006
    Date of Patent: September 7, 2010
    Assignees: Shin-Etsu Quartz Products Co., Ltd., Shin-Etsu Chemical Co., Ltd.
    Inventors: Hiroyuki Watanabe, Akira Fujinoki, Takayuki Imaizumi, Kazuhisa Hayakawa, Shingo Niinobe
  • Publication number: 20100109509
    Abstract: It is an object of the present invention to provide a copper-containing silica glass which emits fluorescence having a peak in a wavelength range of from 520 nm to 580 nm under irradiation of ultraviolet light with a wavelength of 400 nm or less, and which is excellent in long term stability even in the high output use. The copper-containing silica glass is made to have copper of from 5 wtppm to 200 wtppm, which emits fluorescence having a peak in a wavelength range of from 520 nm to 580 nm under irradiation of ultraviolet light with a wavelength ranging from 160 nm to 400 nm, and in which an internal transmittance per 2.5 mm thickness at a wavelength of 530 nm is 95% or more.
    Type: Application
    Filed: April 28, 2008
    Publication date: May 6, 2010
    Applicants: SHIN-ETSU QUARTZ PRODUCTS CO., LTD. (SQP), OPTO-ELECTRONICS LABORATORY, INC.
    Inventors: Tetsuji Ueda, Michinari Ohuchi, Hiroyuki Nishimura, Akira Fujinoki, Masahiro Nakatsuka, Hidetsugu Yoshida
  • Publication number: 20100065316
    Abstract: Disclosed is a printed wiring board which attains aims of printed wiring boards required for realizing high-speed, high-frequency semiconductor devices, namely a printed wiring board having low dielectric constant, low dielectric loss tangent and low linear expansion coefficient. Also disclosed is a composite woven fabric suitably used as a base material for such a printed wiring board. Specifically disclosed is a composite woven fabric containing quartz glass fibers and polyolefin fibers, in which the ratio of the quartz glass fibers to the composite woven fabric is set at 10 vol % or more and 90 vol % or less. It is preferred that the quartz glass fibers each have a filament diameter of 3 ?m or more and 16 ?m or less, and the composite woven fabric has a thickness of 200 ?m or less.
    Type: Application
    Filed: November 7, 2007
    Publication date: March 18, 2010
    Applicant: SHIN-ETSU QUARTZ PRODUCTS, LTD.
    Inventors: Akira Sato, Akira Fujinoki, Hiroyuku Nishimura, Tsukasa Sakaguchi
  • Publication number: 20080216513
    Abstract: To provide a technique with which a quartz glass jig and a doped quartz glass jig are regenerated by completely removing the impurities which are attached to the surface and the impurities which have diffused into the interior from quartz glass jigs which have been used in semiconductor production processes and then carrying out working repair and removing the contamination from the working processes as well. After use, the impurities are removed from the aforementioned quartz glass jigs in the said purification treatment process which includes a purification treatment process in which the quartz glass jigs are subjected to a purification treatment in a gaseous atmosphere which includes a halogen element at a temperature within the region above a prescribed temperature.
    Type: Application
    Filed: April 27, 2006
    Publication date: September 11, 2008
    Applicants: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Tatsuhiro Sato, Akira Fujinoki, Itsuo Araki
  • Publication number: 20080164631
    Abstract: A process for producing a transparent or opaque silica glass product including mixing a silica fine powder and a cellulose derivative and injection molding the mixture, followed by degreasing treatment and baking treatment, which is characterized in that the cellulose derivative is a cellulose derivative which causes reversible thermal gelation in an aqueous solution of at least one member selected from methyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose; in producing a transparent silica glass product, the cellulose derivative is added in water heated at a gelation temperature thereof or higher, and after cooling, the formed aqueous solution is kneaded with the silica fine powder; and in producing an opaque silica glass product, the cellulose derivative is added in a silica slurry containing a silica powder and heated at a gelation temperature of the cellulose derivative or higher.
    Type: Application
    Filed: February 9, 2006
    Publication date: July 10, 2008
    Applicant: Shin-Etsu Quartz Products Co., Ltd
    Inventors: Hiroyuki Watanabe, Akira Fujinoki, Takayuki Imaizumi, Kazuhisa Hayakawa, Shingo Niinobe
  • Patent number: 7312170
    Abstract: The present invention provides an optical synthetic quartz glass material which substantially does not cause changes in transmitted wave surface (TWS) by solarization, compaction (TWS delayed), rarefaction (TWS progressed) and photorefractive effect when ArF excimer laser irradiation is applied at a low energy density, e.g. at energy density per pulse of 0.3 mJ/cm2 or less. The present invention further provides a method for manufacturing the same. In order to solve the above-mentioned problems, the optical synthetic quartz glass material of the present invention is characterized in that, in a synthetic quartz glass prepared by a flame hydrolysis method using a silicon compound as a material, the followings are satisfied that the amount of SiOH is within a range of more than 10 ppm by weight to 400 ppm by weight, content of fluorine is 30 to 1000 ppm by weight, content of hydrogen is 0.
    Type: Grant
    Filed: March 3, 2004
    Date of Patent: December 25, 2007
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Hiroyuki Nishimura, Akira Fujinoki
  • Patent number: 7288775
    Abstract: It is an object of the present invention to provide synthetic quartz glass optical materials suitable for use in YAG of higher order harmonics. The damage threshold value in J/cm2 (energy density at which cracks occur generated by irradiation) is to be considered when synthetic quartz glass material is irradiated with YAG laser of third or higher order harmonics with single pulses or continuously. Regarding a synthetic quartz glass optical material in use for the optical parts constituting the prism and lens used in a laser beam machine, this invention provides a synthetic quartz glass material suitably used for the YAG laser with the third or higher order of harmonic, choosing the following conditions: OH group concentration is in the range of ?1 to ?300 ppm; contained hydrogen molecule concentration is in the range of ?2×1018 to ?2×1019 molecules/cm3; transmittance of ultraviolet rays at 245 nm of wavelength is 99.9% or more; and the fictive temperature is in the range of ?880 to ?990° C.
    Type: Grant
    Filed: July 19, 2003
    Date of Patent: October 30, 2007
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Akira Fujinoki, Hiroyuki Nishimura, Kunio Yoshida
  • Patent number: 7111477
    Abstract: An object is to provide a method for producing an optical synthetic quartz glass and an optical synthetic glass, having a birefringence of lower than 0.5 nm/cm and having favorable refractive index distribution, yet without lowering the productivity, as well as to provide an annealing furnace suitably used in practicing said method. In a step of raising the temperature of a columnar optical synthetic quartz glass preform to a temperature of from 800° C. to 1200° C., and after keeping for a definite time, lowering the temperature, the temperature is lowered with a temperature difference of from 1 to 20° C. between the temperature of the light transmitting surface of the optical synthetic quartz glass preform and the temperature of the outer peripheral side surface of the optical synthetic quartz glass preform at temperature-lowering rates of from 2 to 50° C./hour, respectively.
    Type: Grant
    Filed: December 16, 2002
    Date of Patent: September 26, 2006
    Assignees: Heraeus Quarzglas GmbH & Co. Kg, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Takayuki Oshima, Akira Fujinoki
  • Patent number: 7093465
    Abstract: An object of the present invention is to overcome the problems of the prior art technique, and to provide a heat treatment method as well as a heat treatment apparatus capable of heat treating, with higher efficiency, a synthetic quartz glass for optical use having higher homogeneity and higher purity. Another object of the present invention is to provide and a synthetic quartz glass for optical use.
    Type: Grant
    Filed: May 31, 2001
    Date of Patent: August 22, 2006
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu quartz Products Co., Ltd.
    Inventors: Tetsuji Ueda, Hiroyuki Nishimura, Akira Fujinoki
  • Publication number: 20060183622
    Abstract: The present invention provides an optical synthetic quartz glass material which substantially does not cause changes in transmitted wave surface (TWS) by solarization, compaction (TWS delayed), rarefaction (TWS progressed) and photorefractive effect when ArF excimer laser irradiation is applied at a low energy density, e.g. at energy density per pulse of 0.3 mJ/cm2 or less. The present invention further provides a method for manufacturing the same. In order to solve the above-mentioned problems, the optical synthetic quartz glass material of the present invention is characterized in that, in a synthetic quartz glass prepared by a flame hydrolysis method using a silicon compound as a material, the followings are satisfied that the amount of SiOH is within a range of more than 10 ppm by weight to 400 ppm by weight, content of fluorine is 30 to 1000 ppm by weight, content of hydrogen is 0.
    Type: Application
    Filed: March 3, 2004
    Publication date: August 17, 2006
    Inventors: Hiroyuki Nishimura, Akira Fujinoki
  • Publication number: 20060059948
    Abstract: First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.
    Type: Application
    Filed: November 28, 2003
    Publication date: March 23, 2006
    Inventors: Tatsuhiro Sato, Takahiro Kaitou, Akira Fujinoki, Toshiyuki Kato, Tohru Segawa, Nobumasa Yoshida
  • Patent number: 7007510
    Abstract: An object of the present invention is to provide an improved blank such that an optical member of a high homogeneity can be obtained therefrom, and to provide a vessel and a heat treatment method for heat-treating a highly uniform synthetic quartz blank. In a first aspect of the invention a special designed blank is provided showing a concave shaped outer surface. In a second aspect of the invention a special designed vessel for heat-treating blanks is provided, whereby the degree of heat emission at the center is set higher than that of the surroundings.
    Type: Grant
    Filed: December 9, 2003
    Date of Patent: March 7, 2006
    Assignees: Heraeus Quarzglas GmbH Co. KG, Shin-Etsu Quartz Products Ltd.
    Inventors: Tetsuji Ueda, Akira Fujinoki, Hiroyuki Nishimura, Martin Trommer, Stefan Ochs
  • Publication number: 20050239626
    Abstract: It is an object of the present invention to provide synthetic quartz glass optical materials suitable for use in YAG of higher order harmonics. The damage threshold value in J/cm2 (energy density at which cracks occur generated by irradiation) is to be considered when synthetic quartz glass material is irradiated with YAG laser of third or higher order harmonics with single pulses or continuously. Regarding a synthetic quartz glass optical material in use for the optical parts constituting the prism and lens used in a laser beam machine, this invention provides a synthetic quartz glass material suitably used for the YAG laser with the third or higher order of harmonic, choosing the following conditions: OH group concentration is in the range of ?1 to ?300 ppm; contained hydrogen molecule concentration is in the range of ?2×1018 to ?2×1019 molecules/cm3; transmittance of ultraviolet rays at 245 nm of wavelength is 99.9% or more; and the fictive temperature is in the range of ?880 to ?990° C.
    Type: Application
    Filed: July 19, 2003
    Publication date: October 27, 2005
    Inventors: Akira Fujinoki, Hiroyuki Nishimura, Kunio Yoshida
  • Patent number: RE41249
    Abstract: An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.
    Type: Grant
    Filed: November 30, 2006
    Date of Patent: April 20, 2010
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Tatsuhiro Sato, Nobumasa Yoshida, Akira Fujinoki, Kyoichi Inaki, Tomoyuki Shirai