Patents by Inventor Akira Hisano
Akira Hisano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180251889Abstract: A sintered compact magnesium oxide target for sputtering has a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm3 or higher, and a whiteness of 60% or less. To uniformly deposit a magnesium oxide film, a magnesium oxide target having a higher purity and a higher density is demanded. An object is to provide a target capable of realizing the above and a method for producing such a target. While a magnesium oxide sintered compact sputtering target is produced by hot-pressing a raw material powder, there is a problem in that color shading occurs in roughly ?60 (within a circle having a diameter of 60 mm) at the center part of the target. Conventionally, no particularly attention was given to this problem. However, in recent years, it has become necessary to investigate and resolve this problem in order to improve the deposition quality.Type: ApplicationFiled: May 3, 2018Publication date: September 6, 2018Inventors: Akira Hisano, Yuichiro Nakamura
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Patent number: 10066290Abstract: A sintered compact magnesium oxide target for sputtering has a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm3 or higher, and a whiteness of 60% or less. To uniformly deposit a magnesium oxide film, a magnesium oxide target having a higher purity and a higher density is demanded. An object is to provide a target capable of realizing the above and a method for producing such a target. While a magnesium oxide sintered compact sputtering target is produced by hot-pressing a raw material powder, there is a problem in that color shading occurs in roughly ?60 (within a circle having a diameter of 60 mm) at the center part of the target. Conventionally, no particularly attention was given to this problem. However, in recent years, it has become necessary to investigate and resolve this problem in order to improve the deposition quality.Type: GrantFiled: May 3, 2018Date of Patent: September 4, 2018Assignee: JX Nippon Mining & Metals CorporationInventors: Akira Hisano, Yuichiro Nakamura
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Patent number: 9988709Abstract: A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm3 or higher, and a whiteness of 60% or less. In order to uniformly deposit a magnesium oxide film, a magnesium oxide target having a higher purity and a higher density is being demanded. An object of this invention is to provide a target capable of realizing the above, and a method for producing such a target. While a magnesium oxide sintered compact sputtering target is produced by hot-pressing a raw material powder, there is a problem in that color shading occurs in roughly ?60 (within a circle having a diameter of 60 mm) at the center part of the target. Conventionally, no particularly attention was given to this problem. However, in recent years, it has become necessary to investigate and resolve this problem in order to improve the deposition quality.Type: GrantFiled: December 25, 2012Date of Patent: June 5, 2018Assignee: JX Nippon Mining & Metals CorporationInventors: Akira Hisano, Yuichiro Nakamura
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Patent number: 9034154Abstract: A sputtering target with low generation of particles in which oxides, carbides, nitrides, borides, intermetallic compounds, carbonitrides, and other substances without ductility exist in a matrix phase made of a highly ductile substance at a volume ratio of 1 to 50%, wherein a highly ductile and conductive metal coating layer is formed on an outermost surface of the target. Provided are a sputtering target capable of improving the target surface in which numerous substances without ductility exist and preventing or inhibiting the generation of nodules and particles during sputtering, and a method of producing such a sputtering target.Type: GrantFiled: February 24, 2010Date of Patent: May 19, 2015Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Nakamura, Akira Hisano, Junnosuke Sekiguchi
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Publication number: 20140284212Abstract: A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm3 or higher, and a whiteness of 60% or less. In order to uniformly deposit a magnesium oxide film, a magnesium oxide target having a higher purity and a higher density is being demanded. An object of this invention is to provide a target capable of realizing the above, and a method for producing such a target. While a magnesium oxide sintered compact sputtering target is produced by hot-pressing a raw material powder, there is a problem in that color shading occurs in roughly ?60 (within a circle having a diameter of 60 mm) at the center part of the target. Conventionally, no particularly attention was given to this problem. However, in recent years, it has become necessary to investigate and resolve this problem in order to improve the deposition quality.Type: ApplicationFiled: December 25, 2012Publication date: September 25, 2014Applicant: JX Nippon Mining & Metals CorporationInventors: Akira Hisano, Yuichiro Nakamura
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Patent number: 8663402Abstract: A sputtering target and surface processing method is provided. Intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in the target surface in a highly ductile matrix phase at a volume ratio of 1 to 50%. The target surface is preliminarily subjected to primary processing of cutting work, and then subsequently subjected to finish processing via polishing. The sputtering target subject to this surface processing has an improved target surface with numerous substances without ductility and prevents or suppresses the generation of nodules and particles upon sputtering.Type: GrantFiled: February 11, 2011Date of Patent: March 4, 2014Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Nakamura, Akira Hisano
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Publication number: 20110162971Abstract: A sputtering target with low generation of particles in which oxides, carbides, nitrides, borides, intermetallic compounds, carbonitrides, and other substances without ductility exist in a matrix phase made of a highly ductile substance at a volume ratio of 1 to 50%, wherein a highly ductile and conductive metal coating layer is formed on an outermost surface of the target.Type: ApplicationFiled: February 24, 2010Publication date: July 7, 2011Applicant: JX NIPPON MINING & METALS CORPORATIONInventors: Yuichiro Nakamura, Akira Hisano, Junnosuke Sekiguchi
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Publication number: 20110132757Abstract: A sputtering target and surface processing method is provided. Intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in the target surface in a highly ductile matrix phase at a volume ratio of 1 to 50%. The target surface is preliminarily subjected to primary processing of cutting work, and then subsequently subjected to finish processing via polishing. The sputtering target subject to this surface processing has an improved target surface with numerous substances without ductility and prevents or suppresses the generation of nodules and particles upon sputtering.Type: ApplicationFiled: February 11, 2011Publication date: June 9, 2011Applicant: JX NIPPON MINING & METALS CORPORATIONInventors: Yuichiro Nakamura, Akira Hisano
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Patent number: 7927434Abstract: Provided is a Co—Cr—Pt—B alloy sputtering target comprising an island-shaped rolled structure formed from a Co-rich phase based on the primary crystal formed upon casting, and a Co—Cr—Pt—B alloy sputtering target in which the island-shaped rolled structure has an average size of 200 ?m or less. This Co—Cr—Pt—B alloy sputtering target has an uniform and fine rolled structure with minimal segregation and residual stress upon casting, and the present invention aims to enable the stable and inexpensive manufacture of the target, prevent or suppress the generation of particles, and to improve the production yield of deposition.Type: GrantFiled: February 15, 2005Date of Patent: April 19, 2011Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Nakamura, Akira Hisano
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Patent number: 7909949Abstract: Provided is a surface processing method of a sputtering target, wherein a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50% is preliminarily subject to the primary processing of cutting work, then subsequently subject to finish processing via polishing. The sputtering target subject to this surface processing method is able to improve the target surface having numerous substances without ductility, and prevent or suppress the generation of nodules and particles upon sputtering.Type: GrantFiled: February 15, 2005Date of Patent: March 22, 2011Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Nakamura, Akira Hisano
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Patent number: 7767139Abstract: An AlRu sputtering target that is a sintered body composed of an AlRu intermetallic compound of 95 vol. % or more is provided. It is manufactured by a stable and low-cost method that provides it with an even texture, significantly reduces oxygen, prevents or suppresses the generation of particles, and improves the yield ratio of deposition goods.Type: GrantFiled: April 9, 2007Date of Patent: August 3, 2010Assignee: Nippon Mining & Metals Co., Ltd.Inventor: Akira Hisano
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Patent number: 7578965Abstract: A high purity Ru powder wherein the content of the respective alkali metal elements such as Na and K is 10 wtppm or less, and the content of Al is in the range of 1 to 50 wtppm. Further provided is a manufacturing method of such high purity Ru powder wherein Ru raw material having a purity of 3N (99.9%) or less is used as an anode and electrolytic refining is performed in a solution. Further still, provided is a high purity Ru powder for manufacturing a sputtering target which is capable of reducing harmful substances as much as possible, generates few particles during deposition, has a uniform film thickness distribution, has a purity of 4N (99.99%) or higher, and is suitable in forming a capacitor electrode material of a semiconductor memory; a sputtering target obtained by sintering such high purity Ru powder; a thin film obtained by sputtering this target; and a manufacturing method of the foregoing high purity Ru powder.Type: GrantFiled: February 2, 2005Date of Patent: August 25, 2009Assignee: Nippon Mining & Metals Co., Ltd.Inventors: Yuichiro Shindo, Akira Hisano
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Publication number: 20070240992Abstract: A high purity Ru powder wherein the content of the respective alkali metal elements such as Na and K is 10 wtppm or less, and the content of Al is in the range of 1 to 50 wtppm. Further provided is a manufacturing method of such high purity Ru powder wherein Ru raw material having a purity of 3N (99.9%) or less is used as an anode and electrolytic refining is performed in a solution. Further still, provided is a high purity Ru powder for manufacturing a sputtering target which is capable of reducing harmful substances as much as possible, generates few particles during deposition, has a uniform film thickness distribution, has a purity of 4N (99.99%) or higher, and is suitable in forming a capacitor electrode material of a semiconductor memory; a sputtering target obtained by sintering such high purity Ru powder; a thin film obtained by sputtering this target; and a manufacturing method of the foregoing high purity Ru powder.Type: ApplicationFiled: February 2, 2005Publication date: October 18, 2007Applicant: NIPPON MINING & METALS CO., LTD.Inventors: Yuichiro Shindo, Akira Hisano
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Publication number: 20070187236Abstract: Provided is a Co—Cr—Pt—B alloy sputtering target comprising an island-shaped rolled structure formed from a Co-rich phase based on the primary crystal formed upon casting, and a Co—Cr—Pt—B alloy sputtering target in which the island-shaped rolled structure has an average size of 200 ?m or less. This Co—Cr—Pt—B alloy sputtering target has an uniform and fine rolled structure with minimal segregation and residual stress upon casting, and the present invention aims to enable the stable and inexpensive manufacture of the target, prevent or suppress the generation of particles, and to improve the production yield of deposition.Type: ApplicationFiled: February 15, 2005Publication date: August 16, 2007Applicant: NIPPON MINING & METALS CO., LTD.Inventors: Yuichiro Nakamura, Akira Hisano
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Publication number: 20070175753Abstract: An AlRu sputtering target that is a sintered body composed of an AlRu intermetallic compound of 95 vol.% or more is provided. It is manufactured by a stable and low-cost method that provides it with an even texture, significantly reduces oxygen, prevents or suppresses the generation of particles, and improves the yield ratio of deposition goods.Type: ApplicationFiled: April 9, 2007Publication date: August 2, 2007Applicant: NIPPON MINING & METALS CO., LTD.Inventor: Akira Hisano
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Publication number: 20070125645Abstract: Provided is a surface processing method of a sputtering target, wherein a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50% is preliminarily subject to the primary processing of cutting work, then subsequently subject to finish processing via polishing. The sputtering target subject to this surface processing method is able to improve the target surface having numerous substances without ductility, and prevent or suppress the generation of nodules and particles upon sputtering.Type: ApplicationFiled: February 15, 2005Publication date: June 7, 2007Applicant: NIPPON MINING & METALS CO., LTD.Inventors: Yuichiro Nakamura, Akira Hisano
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Publication number: 20040144204Abstract: The present invention pertains to an AlRu sputtering target characterized in that it is a sintered body composed of an AlRu intermetallic compound of 95 vol. % or more, and an object thereof is to enable the stable and low-cost manufacture of an AlRu sputtering target having an even texture and capable of significantly reducing oxygen, and to prevent or suppress the generation of particles and improve the yield ratio of deposition goods.Type: ApplicationFiled: December 4, 2003Publication date: July 29, 2004Inventor: Akira Hisano
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Patent number: 4534980Abstract: Creams for external or topical use comprising ketoprofen as an effective component and crotamiton as an agent for preventing crystalline precipitation of the effective component. The creams possess an antiinflammatory and antipyretic effect and are excellent in permeation and absorption into the skin which enables the topical and external use of the creams.Type: GrantFiled: July 23, 1984Date of Patent: August 13, 1985Assignee: Hokuriku Pharmaceutical Co., Ltd.Inventors: Yasuo Itoh, Hideo Kato, Kugako Matsumura, Tomoyasu Nishikawa, Akira Hisano, Takehisa Yamada, Eiichi Koshinaka