Patents by Inventor Akira Hosomi
Akira Hosomi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9399822Abstract: The present inventive concepts provide a liquid composition for etching a metal containing copper. The liquid composition may include hydrogen peroxide in a range of about 0.1 wt % to about 10 wt % and a buffer solution in a range of about 0.1 wt % to about 10 wt %. The buffer solution may include citrate. The liquid composition may have a pH in a range of about 4.0 to about 7.0.Type: GrantFiled: June 24, 2014Date of Patent: July 26, 2016Assignees: Samsung Electronics Co., Ltd., Samyoung Pure Chemicals Co., Ltd., Mitsubishi Gas Chemical Company, Inc.Inventors: Dong-Min Kang, Hyungjun Jeon, Ingoo Kang, Jeong Kwon, Jung-ig Jeon, Jungsik Choi, Young Taek Hong, Akira Hosomi, Tomoko Suzuki
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Patent number: 9177827Abstract: Disclosed are an etchant which is used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel, and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant to be used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode, including hydrogen peroxide, an organic acid, and an organic phosphonic acid, wherein the organic acid is at least one member selected from citric acid and malic acid; a content of hydrogen peroxide is from 0.75 to 12% by mass; a content of the organic acid is from 0.75 to 25% by mass; and a content of the organic phosphonic acid is from 0.0005 to 1% by mass, and a method for manufacturing a semiconductor device using the etchant.Type: GrantFiled: December 24, 2010Date of Patent: November 3, 2015Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventor: Akira Hosomi
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Publication number: 20150079782Abstract: The present inventive concepts provide a liquid composition for etching a metal containing copper. The liquid composition may include hydrogen peroxide in a range of about 0.1 wt % to about 10 wt % and a buffer solution in a range of about 0.1 wt % to about 10 wt %. The buffer solution may include citrate. The liquid composition may have a pH in a range of about 4.0 to about 7.0.Type: ApplicationFiled: June 24, 2014Publication date: March 19, 2015Inventors: Dong-Min Kang, Hyungjun Jeon, Ingoo Kang, Jeong Kwon, Jung-ig Jeon, Jungsik Choi, Young Taek Hong, Akira Hosomi, Tomoko Suzuki
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Patent number: 8900478Abstract: Disclosed are an etchant which is used for redistribution of a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and citric acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of citric acid of from 1 to 20% by mass, with a molar ratio of hydrogen peroxide and citric acid being in the range of from 0.3 to 5; an etchant for selective etching of copper which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and malic acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of malic acid of from 1.5 to 25% by mass, with a molar ratio of hydrogen peroxide and malic acid being in the range of from 0.Type: GrantFiled: December 14, 2010Date of Patent: December 2, 2014Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Akira Hosomi, Kensuke Ohmae
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Publication number: 20130175238Abstract: This invention relates to an etching solution including hydrogen peroxide, sulfuric acid, chlorine ions, benzotriazole and pyrazole, and to a method of manufacturing a printed wiring substrate wherein the surface of the metal wiring of the printed wiring substrate is treated with an alkali solution, roughened using the etching solution and then subjected to anti-rust treatment, thus forming porous surface irregularities and micro anchors even with a small etching amount of the metal (Cu) to thereby obtain a high force of adhesion between the metal and an insulating material.Type: ApplicationFiled: May 17, 2012Publication date: July 11, 2013Applicants: Samyoung Pure Chemicals Co., Ltd., SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Dae Jo HONG, Chang Bo LEE, Cheol Ho CHOI, Chang Sup RYU, Sung Pyo HONG, Jong Hoon JEON, Akira HOSOMI, Hiroshi TAKAMIYA
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Publication number: 20120270396Abstract: Disclosed are an etchant which is used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel, and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant to be used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode, including hydrogen peroxide, an organic acid, and an organic phosphonic acid, wherein the organic acid is at least one member selected from citric acid and malic acid; a content of hydrogen peroxide is from 0.75 to 12% by mass; a content of the organic acid is from 0.75 to 25% by mass; and a content of the organic phosphonic acid is from 0.0005 to 1% by mass, and a method for manufacturing a semiconductor device using the etchant.Type: ApplicationFiled: December 24, 2010Publication date: October 25, 2012Applicant: Mitsubishi Gas ChemicalInventor: Akira Hosomi
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Publication number: 20120261608Abstract: Disclosed are an etchant which is used for redistribution of a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and citric acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of citric acid of from 1 to 20% by mass, with a molar ratio of hydrogen peroxide and citric acid being in the range of from 0.3 to 5; an etchant for selective etching of copper which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and malic acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of malic acid of from 1.5 to 25% by mass, with a molar ratio of hydrogen peroxide and malic acid being in the range of from 0.Type: ApplicationFiled: December 14, 2010Publication date: October 18, 2012Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Akira Hosomi, Kensuke Ohmae
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Patent number: 7232528Abstract: The surface treatment agent for copper and copper alloys contains hydrogen peroxide, a mineral acid, an azole compound, silver ion and a halide ion. The surface treatment agent for copper and copper alloys is useful in the production of printed wiring boards in electronics industry. The surface treatment agent roughens the surface of copper and copper alloys. Particularly, the surface treatment agent can form a uniform and undulation-free roughened surface on copper-clad substrates having plated mirror surface, this having been difficult in conventional techniques, thereby significantly improving the adhesion to etching resists, solder resists, in addition, to prepregs and a resin for mounting electronic parts.Type: GrantFiled: June 18, 2002Date of Patent: June 19, 2007Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Akira Hosomi, Naoki Kogure, Kenichi Moriyama, Kenichi Takahashi, Atsushi Hosoda, Kazuhiko Ikeda
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Publication number: 20050061202Abstract: The surface treatment agent for copper and copper alloys contains hydrogen peroxide, a mineral acid, an azole compound, silver ion and a halide ion. The surface treatment agent for copper and copper alloys is useful in the production of printed wiring boards in electronics industry. The surface treatment agent roughens the surface of copper and copper alloys. Particularly, the surface treatment agent can form a uniform and undulation-free roughened surface on copper-clad substrates having plated mirror surface, this having been difficult in conventional techniques, thereby significantly improving the adhesion to etching resists, solder resists, in addition, to prepregs and a resin for mounting electronic parts.Type: ApplicationFiled: June 18, 2002Publication date: March 24, 2005Inventors: Akira Hosomi, Naoki Kogure, Kenichi Moriyama, Kenichi Takahashi, Atsushi Hosoda, Kazuhiko Ikeda
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Patent number: 5805361Abstract: In the process of press molding an optical element having an optical functioning face having a grating which is rotationally asymmetric, both ends of an molding face of an lower press die are cut off to form inclined faces. During a press molding, glass material filled in the cuttings presses the inclined faces so that the rotation of a lower press die in an barrel die around an axis is prevented. In addition, the part filled in the cuttings is used as the reference point to mount on an optical apparatus. As a result, the rotation of the press dies is prevented, and the placement of the rotationally asymmetric optical functioning face is avoided. Therefore, the direction for mounting the optical element on an optical apparatus can be easily decided.Type: GrantFiled: July 15, 1996Date of Patent: September 8, 1998Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Akira Morimoto, Yoshiyuki Shimizu, Akira Hosomi
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Patent number: 5328894Abstract: A food-preserving agent comprising an oxygen absorbent and a compound represented by the following structural formula (I): ##STR1## , wherein n is an integer of 2 to 4 and X is H or CH.sub.3, can remove generated acetaldehyde effective, thereby preserving food without any fear of disagreeable odor for a long duration.Type: GrantFiled: March 5, 1992Date of Patent: July 12, 1994Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Hidechika Wakabayashi, Yasuo Sugihara, Akira Hosomi, Futoshi Nakaya
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Patent number: 5102673Abstract: There are disclosed an oxygen absorbent comprising boron or a reducing boron compound, an alkaline substance and a carrier, an oxygen absorbent parcel formed by enclosing said oxygen absorbent in a permeable packaging parcel, a food package and a package of a metallic or electronic product or part containing said oxygen absorbent parcel.Type: GrantFiled: October 24, 1990Date of Patent: April 7, 1992Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Yasuo Sugihara, Teruo Takeuchi, Hidechika Wakabayashi, Akira Hosomi, Toshio Komatsu
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Patent number: 4973705Abstract: A method for preparation of 1,3-oxathiolanes is described. The method comprises reacting, in a solvent, a fluoride ion source, a carbonyl compound, and a halomethyl trimethylsilylmethyl sulfide, wherein the halomethyl trimethylsilyl methyl sulfide is selected from a group consisting of chloromethyl trimethylsilylmethyl sulfide, bromomethyl trimethylsilylmethyl sulfide, or iodomethyl trimethylsilylmethyl sulfide.Type: GrantFiled: September 9, 1988Date of Patent: November 27, 1990Assignee: Toray Silicone Company, Ltd.Inventor: Akira Hosomi
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Patent number: 4946955Abstract: A method for preparation of polycyclic 1,3-thiazolidines is described. The method comprises reacting a fluoride ion source, in a solvent, with an onium salt synthesized by the reaction of a nitrogenous heteroaromatic compound with a halomethyl trimethylsilylmethyl sulfide, the halomethyl trimethylsilylmethyl sulfide being selected from the group consisting of chloromethyl trimethylsilylmethyl sulfide, bromomethyl trimethylsilylmethyl sulfide, or iodomethyl trimethylsilylmethyl sulfide.Type: GrantFiled: September 9, 1988Date of Patent: August 7, 1990Assignee: Toray Silicone Company LimitedInventor: Akira Hosomi