Abstract: A substrate processing method dose not use or only use the least possible amount of an organic solvent, and can quickly and completely remove a liquid from a wet substrate surface without allowing the liquid to remain on the substrate surface. The substrate processing method for drying a substrate surface which is wet with a liquid, includes: removing the liquid from the substrate surface and sucking the liquid together with its surrounding gas into a gas/liquid suction nozzle, disposed opposite the substrate surface, while relatively moving the gas/liquid suction nozzle and the substrate parallel to each other; and blowing a dry gas from a dry gas supply nozzle, disposed opposite the substrate surface, toward that area of the substrate surface from which the liquid has been removed while relatively moving the dry gas supply nozzle and the substrate parallel to each other.

Abstract: An electrolytic processing method makes it possible to preferentially process a diffusion barrier layer while suppressing processing of an interconnect metal, thereby enabling omission of CMP or a lowering of processing pressure in CMP. The electrolytic processing method comprises: bringing a surface of a substrate (W) into contact with an electrolytic solution (48) comprising an organic solvent, such as propylene carbonate, and an electrolyte, such as lithium hexafluorophosphate, dissolved into the organic solvent, and optionally an inhibitor composed of a heterocyclic compound; and applying an electric potential, for example, a positive electric potential which is controlled at a value less than the decomposition voltage of the organic solvent, to the surface of the substrate (W) to carry out electrolytic processing of the substrate surface.

Abstract: An electrolytic processing apparatus can increase the efficiency of the dissociation reaction of water and efficiently perform electrolytic processing, and can eliminate the need for an operation of a change of ion exchanger. The electrolytic processing apparatus includes: a processing electrode and a feeding electrode; a liquid supply section for supplying a liquid containing an ion-exchange material between the workpiece and at least one of the processing electrode and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a drive section for moving the workpiece and at least one of the processing electrode and the feeding electrode relative to each other; wherein electrolytic processing of the workpiece is carried out while keeping the workpiece not in contact with but close to the processing electrode at a distance of not more than 10 ?m.

Abstract: An electrolytic polishing method of a substrate having a barrier film and an interconnect metal layer on a surface to be processed under the presence of an electrolytic solution, including a barrier film electrolytic polishing process which removes the barrier film by applying a voltage between a cathode and an anode, with the surface to be processed serving as the cathode, and causing relative motion between the surface to be processed and a polishing pad which faces and makes contact with the surface to be processed.

Abstract: The present invention provides an electrochemical polishing method capable of increasing a polishing speed while preventing excessive polishing, such as dishing or erosion. In the electrochemical polishing method, when a voltage applied to a conductive film formed on the surface of a substrate is increased at a contact surface pressure of 0 between the surface of the substrate and a polishing pad, a voltage at a first change point C that allows a current density to start to decrease after an increase is referred to as a minimum voltage. In addition, when the voltage is increased at a contact surface pressure having a finite value, a voltage at a second change point B that allows the current density to be maintained constant after the decrease is referred to as a maximum voltage. In this case, the surface of the conductive film is polished while maintaining the voltage to be not lower than the minimum voltage and not higher than the maximum voltage.

Abstract: A composite electrolytic processing method makes it possible to remove a conductive film without leaving it in an electrically-insulated state on an underlying barrier film, thereby exposing the barrier film. The electrochemical mechanical polishing method includes: applying a voltage between a first electrode connected to one pole of a power source and a second electrode, connected to the other pole of the power source, for feeding electricity to a conductive film of a polishing object; filling an electrolytic liquid into a space between the first electrode and the conductive film of the polishing object; and pressing and rubbing the conductive film against a polishing surface of a polishing pad to polish the conductive film in such a manner that a barrier film underlying the conductive film becomes gradually exposed from the center toward the periphery of the polishing object.

Abstract: An electrochemical mechanical polishing apparatus is for use in polishing of a conductive material (e.g., metal) on a surface of a substrate by combination of electrochemical action and mechanical action.

Abstract: A pre-polishing treatment solution has a prominent corrosion inhibiting effect, and can be used in pre-polishing treatments for interconnect substrates. The pre-polishing treatment solution comprises a corrosion inhibitor dissolved in an organic solvent.

Abstract: A flattening method can flatly process a surface of a metal film as an interconnect material over the entire film surface at a sufficiently high processing rate even when the metal film has initial surface irregularities. The flattening method for processing and flattening a surface of a metal film formed on a workpiece and having initial surface irregularities, including: coating only recessed portions of the initial surface irregularities of the metal film with a solid or pasty coating material; and processing the surface of the metal film by electrolytic processing using no abrasive.

Abstract: An electrolytic liquid is used for electrolytic polishing which can provide a processed surface having high flattening characteristics with a low voltage applied while ensuring a higher processing rate for an conductive material, and can remove an unnecessary conductive material and expose a barrier film without causing dishing, erosion, or etching at the interface between the barrier film and a metal (conductive material). The electrolytic liquid for use in electrolytic polishing of a surface conductive material of a workpiece comprises an aqueous solution containing at least one organic acid or its salt, at least one strong acid having a sulfonic acid group, a corrosion inhibitor and a water-soluble polymeric compound.

Abstract: A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

Abstract: A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

Abstract: An electrolytic processing apparatus can maintain a difference in electric resistance between a recessed portion and a raised portion in the surface of a workpiece, thereby providing a processed surface with improved flatness.

Abstract: A substrate processing method forms a plated film which is thin and has a high flatness by covering the surface (outermost surface) of a substrate, excluding interior surfaces of recesses such as trenches, with a plating inhibiting material such as an SAM-forming molecular species. The substrate processing method comprises: preparing a substrate having recesses formed in a surface; attaching a plating inhibiting material for inhibiting plating to an outermost surface, which excludes interior surfaces of the recesses, of the substrate surface; and then carrying out electroplating of the surface of the substrate, thereby filling the recesses with a plated metal.

Abstract: A object of this invention is to provide an electrolytic processing method and apparatus that can suppress a change in the electric conductivity of a fluid due to contaminants, such as processing products produced in electrolytic processing, so that the fluid can maintain good flattening properties.

Abstract: An electrolytic processing apparatus can increase the efficiency of the dissociation reaction of water and efficiently perform electrolytic processing, and can eliminate the need for an operation for a change of ion exchanger. The electrolytic processing apparatus includes: a processing electrode and a feeding electrode; a liquid supply section for supplying a liquid containing an ion-exchange material between the workpiece and at least one of the processing electrode and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a drive section for moving the workpiece and at least one of the processing electrode and the feeding electrode relative to each other; wherein electrolytic processing of the workpiece is carried out while keeping the workpiece not in contact with and close to the processing electrode at a distance of not more than 10 ?m.

Abstract: In a polishing apparatus, a polishing tool including abrasive particles and a binder for bonding together the abrasive particles is pressed against a substrate to polish the substrate. The polishing apparatus has a light source for irradiating a polishing surface with light rays for weakening a bond force of the binder for bonding together the abrasive particles, and a waste matter removing mechanism for forcefully removing waste matter produced by polishing or waste matter produced by irradiation. By irradiating the polishing surface with the light rays, dressing of the polishing surface is performed, and products resulting from dressing and the like are removed. The polishing apparatus supplies abrasive particles to the polishing surface stably by dressing and allows high-speed polishing of the substrate.

Abstract: A polishing tool is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. A fixed abrasive polishing tool includes abrasive particles which are subjected to surface treatment by a coupling agent, and resin for fixing said abrasive particles.

Abstract: An apparatus for polishing a surface of a substrate by slidingly engaging the surface with a polishing surface of an abrasive member has a dressing member for dressing the polishing surface of the fixed abrasive member. The dressing member has a dressing surface provided with projections having an angular portion of an obtuse angle of not less than (100°).

Abstract: A nozzle unit having a pressure nozzle for spraying feed liquid and a cylindrical outer tube disposed around the pressure nozzle for high-speed gas blowing. The tip of the nozzle unit is of converging construction. When water is sprayed at low pressure in the nozzle unit, water is atomized to fine droplets.