Abstract: Disclosed herein is a coil component that includes a coil conductor embedded in the element body; a first bump conductor exposed to the mounting surface and the first and side surfaces; a second bump conductor exposed to the mounting surface and the second and fourth side surfaces; a first dummy bump conductor exposed to the mounting surface and the first and fourth side surfaces; a second dummy bump conductor exposed to the mounting surface and the second and third side surfaces; a first conductive resin layer connecting the first bump conductor and first dummy bump conductor; and a second conductive resin layer connecting the second bump conductor and the second dummy bump conductor. The first and bump conductors and the first and second dummy bump conductors are not covered at least partly with the first conductive resin layer.

Abstract: A thermal transfer ribbon comprising a dye layer and a transferable protective layer repeatedly formed on one surface of a substrate, the transferable protective layer having a first layer formed on the substrate, and a second layer formed on the first layer. The first layer comprises an acrylic resin (X) containing methyl methacrylate, an acrylic resin (Y) containing a styrene resin, and a polyester resin (Z). X has a weight average molecular weight of 120000 or more, the mass ratio of X and Y is within the range of 1:9 to 9:1, and the mass of Z is 1% or more and 3% or less of the total mass of X and Y.

Abstract: A coil component includes a coil part having a structure in which interlayer insulating films 51 to 55 and coil patterns CP1 to CP4 are alternately stacked in the coil axis direction and magnetic element bodies M1 to M4 embedding therein the coil part. A radial width of a part of the interlayer insulating film that is positioned between the magnetic element body M1 positioned in the inner diameter area of the coil part and the innermost turn of the coil pattern CP4 is larger than radial widths L11, L21, and L31 of parts of the interlayer insulating films 52 to 54 that are positioned between the magnetic element body M1 and the innermost turns of the coil patterns CP1 to CP3.

Abstract: A thermal transfer image receiving sheet includes: a substrate made of paper; a polyolefin resin layer formed on a first surface of the substrate; an adhesive layer formed on a second surface of the substrate facing away from the first surface; a porous layer formed on the adhesive layer; a foundation layer formed on the porous layer; and an image receiving layer formed on the foundation layer. A surface of the substrate, as defined in JIS B 0601:2001, has a maximum valley (undulation) depth Wv of 2.00 ?m or less and a root mean square slope for the waviness W?q of 0.013 or less. The porous layer has a thickness of 25 ?m or more, and a thickness of the polyolefin resin layer is 0.2 to 3.0 times the thickness of the porous layer.

Abstract: A sensor package substrate disclosed in the present specification has a mounting area in which a sensor chip is mounted and a controller chip connected to the sensor chip. A through hole is formed in the sensor package substrate so as to overlap the mounting area in a plan view and to penetrate the substrate from one surface to the other surface thereof. The mounting area and the controller chip overlap each other in a plan view. According to the present invention, by reducing the thickness of an insulating layer, it is possible not only to reduce the distance of a wiring for the sensor chip and controller chip, but also to reduce the area of the substrate.

Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

Abstract: A sensor package substrate disclosed in the present specification has a mounting area in which a sensor chip is mounted and a controller chip connected to the sensor chip. A through hole is formed in the sensor package substrate so as to overlap the mounting area in a plan view and to penetrate the substrate from one surface to the other surface thereof. The mounting area and the controller chip overlap each other in a plan view. According to the present invention, by reducing the thickness of an insulating layer, it is possible not only to reduce the distance of a wiring for the sensor chip and controller chip, but also to reduce the area of the substrate.

Abstract: A semiconductor laminate film includes a silicon substrate and a semiconductor layer formed on the silicon substrate and containing silicon and germanium. The semiconductor layer having a surface roughness Rms of 1 nm or less. Further, the semiconductor layer satisfies the following relationship t?0.881×x?4.79 where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer. Also, the semiconductor layer being a mixed crystal semiconductor layer containing silicon and germanium.

Abstract: A thermal transfer ribbon including a substrate, the substrate has a surface provided with dye layer parts and transferable protective layer parts repeatedly formed thereon, and the transferrable protective layer parts include first layer parts formed on the substrate, and second layer parts formed on the respective first layer parts. The first layer parts contain a charge control agent, and the second layer parts contain an antistatic agent and a lubricant.

Abstract: A thermal transfer ribbon comprising a dye layer and a transferable protective layer repeatedly formed on one surface of a substrate, the transferable protective layer having a first layer formed on the substrate, and a second layer formed on the first layer. The first layer comprises an acrylic resin (X) containing methyl methacrylate, an acrylic resin (Y) containing a styrene resin, and a polyester resin (Z). X has a weight average molecular weight of 120000 or more, the mass ratio of X and Y is within the range of 1:9 to 9:1, and the mass of Z is 1% or more and 3% or less of the total mass of X and Y.

Abstract: A sensor package substrate disclosed in the present specification has a mounting area in which a sensor chip is mounted and a controller chip connected to the sensor chip. A through hole is formed in the sensor package substrate so as to overlap the mounting area in a plan view and to penetrate the substrate from one surface to the other surface thereof. The mounting area and the controller chip overlap each other in a plan view. According to the present invention, by reducing the thickness of an insulating layer, it is possible not only to reduce the distance of a wiring for the sensor chip and controller chip, but also to reduce the area of the substrate.

Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

Abstract: An electrodeposition coating composition containing blocked isocyanate groups comprising at least one dialkyltin aromatic carboxylic acid salt represented by the following formula ##STR1## wherein R represents an alkyl group having 1 to 12 carbon atoms, and R.sup.1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.