Abstract: The present invention relates to a coating liquid for forming an amorphous silica-based coating film with a low dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of preparing the same. The coating liquid may contain a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), or may contain a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl ortho silicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), mixing the reaction product with specific alkoxysilane or a hydrolysate or a partial hydrolysate thereof, and hydrolyzing all or a portion of the mixture according to the necessity. In addition, the coating liquid is prepared by mixing components described above at a specific ratio and under specific process conditions.

Abstract: A rear structure of a gaseous fuel vehicle in this invention includes right and left rear frame members, and a support frame mounted to the right and left rear frame members, on which support frame a gaseous fuel tank is mounted. Each of the right and left rear frame members is constituted by a curved member which includes a curved portion curving upward, and a front linear portion and a rear linear portion which are lower than the highest portion of the curved portion. The support frame is attached to the front linear portions and the rear linear portions. The front linear portions are attached to the rear end of a vehicle frame to provide a low floor in a passenger compartment. A load applied to the rear ends of the right and left rear frame members is dispersed into the right and left rear frame members and the support frame, and transmitted to the vehicle frame.

Abstract: A coating liquid for forming a silica-containing film with a low-dielectric constant which enables formation of low-density film having a dielectric constant as low as 3 or less and having excellent resistance to oxygen plasma and process adaptation but also in the adhesion to a substrate and film strength. A substrate coated with the silica-containing film having the above characteristics, obtained by the use of the above coating liquid.

Abstract: It is an object of the present invention to provide a method for slicing a hard and brittle material having a crystal structure, such as a silicon ingot, and more particularly a hard and brittle material cutting method which solves the problem of worsening variance in thickness, nanotopography, and wafer warpage. The inventors perfected the present invention upon discovering that when retainer plates are bonded to or pressed against the ends of an ingot, and simultaneous slicing with a wire saw is performed along with the retainer plates, a portion of increasing variance in the warpage, nanotopography, and thickness will appear in the portions corresponding to the retainer plates, resulting in a decrease in variance in wafer warpage, nanotopography, and thickness at the ends of the targeted ingot.

Abstract: It is an object of the present invention to provide a method for slicing a hard and brittle material having a crystal structure, such as a silicon ingot, and more particularly a hard and brittle material cutting method which solves the problem of worsening variance in thickness, nanotopography, and wafer warpage. The inventors perfected the present invention upon discovering that when retainer plates are bonded to or pressed against the ends of an ingot, and simultaneous slicing with a wire saw is performed along with the retainer plates, a portion of increasing variance in the warpage, nanotopography, and thickness will appear in the portions corresponding to the retainer plates, resulting in a decrease in variance in wafer warpage, nanotopography, and thickness at the ends of the targeted ingot.

Abstract: A coating liquid for forming a silica-containing film with a low-dielectric constant which enables formation of low-density film having a dielectric constant as low as 3 or less and having excellent resistance to oxygen plasma and process adaptation but also in the adhesion to a substrate and film strength. A substrate coated with the silica-containing film having the above characteristics, obtained by the use of the above coating liquid.

Abstract: An image forming apparatus 1, which has sophisticated functions of feeding recording paper of various sizes selectively and sorting printed paper, is available in a reduced size. With the feed bin sorters 31a-31d, the output bin sorters 32a-32j, and the output tray 33 being arranged in tiers, pre-printed paper is supplied from any of the feed bin sorters, whereas printed paper is delivered to any of the output bin sorters or the output tray.

Abstract: Silica particles for polishing have a three-dimensional polycondensation structure with an average particle diameter in a range from 5 to 300 nm. The silica particles have residual alkoxy groups therein and a carbon content in a range from 0.5 to 5 weight % retained in the residual alkoxy groups.

Abstract: A coating liquid for forming a silica-containing film with a low-dielectric constant, which enables the formation of a low-density film having a dielectric constant as low as 3 or less and having excellent resistance to oxygen plasma and process adaptation but also in the adhesion to a substrate and film strength, is provided. The coating liquid for forming a silica-containing film with a low-dielectric constant comprises a polymer composition mainly constituted by (i) a polysiloxane and (ii) a readily decomposable resin, said polysiloxane being a reaction product between fine particles of silica and a hydrolyzate of at least one alkoxysilane represented by the following formula (I): XnSi(OR)4−n  (I),  wherein X represents a hydrogen atom, a fluorine atom, an unfluorinated or fluorinated alkyl group of 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group of 1 to 8 carbon atoms, an aryl group or a vinyl group; and n is an integer of 0 to 3.

Abstract: The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film with the low-dielectric constant onto the semiconductor substrate, (b) heating the thus coated film at 50 to 350° C., and then (c) curing the thus treated film at 350 to 450° C. in an inert-gas atmosphere containing 500 to 15,000 ppm by volume of oxygen, and also provides a semiconductor substrate having a silica-containing film formed by the above method. The above step (b) for the thermal treatment is preferably conducted at 150 to 350° C. for 1 to 3 minutes in an air atmosphere. Also, the above curing step (c) is preferably conducted by placing the semiconductor substrate on a hot plate kept at 350 to 450° C.

Abstract: Silica particles for polishing to planarize a surface of a substrate without generating scratches, having the average particle diameter in the range from 5 to 300 nm, carbon content in the range from 0.5 to 5 weight %, and 10%-compressive elasticity modulus in the range from 500 to 3000 kgf/mm2. When the carbon content in the silica particles is less than 0.5 weight %, there is no residual alkoxy group and siloxane bonding proceeds, so that the obtained particles are hard. In that case, although the polishing rate is high, scratches remain or are generated anew after polishing, and planarity of the polished surface is insufficient. On the other hand, when the carbon content is over 5 weight %, many residual alkoxy group are contained in the particles, so that the particles are relatively soft and a sufficient polishing rate can not be achieved.

Abstract: A coating liquid for forming a silica-based film having a low dielectric constant, as low as 3 or less, comprising (i) silica-based fine particles having phenyl groups and (ii) a polysiloxazane which can be produced by reacting hydrolyzate of an alkoxysilane represented by the formula (XnSi(OR1)4−n)and/or hydrolyzate of a halogenated silane represented by the formula (XnSiX′4−n) with a polysilazane represented by —(SiR2R4—NR3)—m, or a coating-liquid for forming the silica-based film, comprising (i) silica-based fine particles having phenyl groups and (ii′) an oxidatively decomposable resin with the weight ratio of the particles to the resin being in the range of 0.5 to 5.

Abstract: A movable sheet separating unit is pushed all the time by a lifting spring in a direction toward a feeding roller. In a non-feeding state, a sheet lifting plate is engaged with an operating fraction so that the movable sheet separating unit is held in a standby position where a separating pad is separated from the feeding roller. In a feeding state, the sheet lifting plate rises and disengages from the operating fraction so that the movable sheets separating unit moves to a pressing position where the separating pad is pressed against the feeding roller. In the pressing position, the separating pad is pressed against the feeding roller via a rotatable support base by a pressing spring, and is displaced by rotation in a direction away from the feeding roller in accordance with a thickness of a sheet S passing through between the separating pad and the feeding roller. Thus, durability of the separating pad can be improved, and a feeder suitable for a fixing type feeding cassette can be provided.

Abstract: The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film with the low-dielectric constant onto the semiconductor substrate, (b) heating the thus coated film at 50 to 350° C., and then (c) curing the thus treated film at 350 to 450° C. in an inert-gas atmosphere containing 500 to 15,000 ppm by volume of oxygen, and also provides a semiconductor substrate having a silica-containing film formed by the above method.

Abstract: A coating liquid for forming porous silica coating, comprising a product of reaction between a short fiber silica and a hydrolyzate of an alkoxysilane of the formula XnSi(OR)4-n or a halogenated silane of the formula XnSiX′4-n (in the formula, X represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; X′ represents a chlorine atom or a bromine atom; and n is an integer of 0 to 3). A coated substrate comprising a porous silica coating film formed from the above coating liquid for forming porous silica coating. A short fiber silica having an average diameter (D) of 10 to 30 nm, a length (L) of 30 to 100 nm and an aspect ratio (L/D) of 3 to 10.

Abstract: A coating liquid for forming a silica-containing film with a low-dielectric constant, which enables the formation of a low-density film having a dielectric constant as low as 3 or less and being excellent not only in resistance of oxygen plasma and in process adaptation but also in adhesion to a substrate and in film strength, is provided. A substrate coated with the silica-containing film having the above characteristics, which is obtained by the use of the above coating liquid, is further provided.

Abstract: A movable sheet separating unit is pushed all the time by a lifting spring in a direction toward a feeding roller. In a non-feeding state, a sheet lifting plate is engaged with an operating fraction so that the movable sheet separating unit is held in a standby position where a separating pad is separated from the feeding roller. In a feeding state, the sheet lifting plate rises and disengages from the operating fraction so that the movable sheets separating unit moves to a pressing position where the separating pad is pressed against the feeding roller. In the pressing position, the separating pad is pressed against the feeding roller via a rotatable support base by a pressing spring, and is displaced by rotation in a direction away from the feeding roller in accordance with a thickness of a sheet S passing through between the separating pad and the feeding roller. Thus, durability of the separating pad can be improved, and a feeder suitable for a fixing type feeding cassette can be provided.

Abstract: The present invention provides a method of easily planarizing the uneven surface of a substrate having an uneven surface. This method comprises the steps of forming a coating film containing spherical fine particles on a surface of a smooth substrate; sticking the surface of the smooth substrate provided with the coating film containing spherical fine particles to the uneven surface of a substrate having an uneven surface; and transferring the coating film containing spherical fine particles to the uneven surface of the substrate so that the uneven surface is planarized.

Abstract: A center pillar includes an upper member 2 and a lower member 3. The upper member 2 is joined by welding to the lower member 3, such that the upper member 2 is positioned inwardly relative to the lower member 3 in a transverse direction of a vehicle body and is inclined rearward relative to the lower member 3 in longitudinal direction of the vehicle body. In addition, an upper end portion of the lower member 3 has an end face that faces transversely outward and inclines downwardly. A reinforcement plate 6 extends to an upper end portion of the upper member and is joined thereat to the upper member for reinforcement of a state in which the lower member 3 is joined to a side sill 5.

Abstract: A far infrared heating methods to facilitate a user receiving continued comfortable thermal stimulation. The far infrared heating method, are provided with a temperature sensor for attachment to the object to be heated, and when the temperature detected by the temperature sensor has reached a predetermined maximum temperature, the radiation from the far infrared radiator is stopped. Furthermore, the user can switch to a timer control mechanism which causes the far infrared radiator to radiate intermittently during a predetermined time cycles.