Abstract: A light-emitting device according to one embodiment of the present disclosure includes: a base having a first surface and a second surface that face each other; a structure having a first conductivity type and erected in a direction perpendicular to the first surface of the base; a semiconductor layer having a second conductivity type different from the first conductivity type, and provided on a side surface of the structure; and an active layer provided between the structure and the semiconductor layer, and having substantially same end surface as the structure and the semiconductor layer above the first surface of the base.

Abstract: A display device, a method of manufacturing a display device, and an electronic device excellent in light extraction efficiency and viewing angle characteristic are provided. A display device includes: a substrate; a light emitting element attached to the substrate; and a sealing layer that seals the light emitting element, in which an uneven portion having a plurality of concave portions and a plurality of convex portions is provided on a light emitting surface of the light emitting element, and a low refractive index portion having a refractive index lower than that of the sealing layer is formed at a periphery of an immediately above portion above the light emitting element in the sealing layer.

Abstract: A light emitting device of an embodiment of the present disclosure includes: a substrate having a first surface and a second surface opposed to each other; semiconductor stacks provided on the first surface of the substrate and each including a first conductivity type layer, an active layer, and a second conductivity type layer that are stacked in order from a side of the first surface, the semiconductor stacks including multiple light emitting regions configured to emit light; and a separation section provided between the multiple light emitting regions and having a top surface at a position higher than the active layer in a direction of a normal to the first surface of the substrate.

Abstract: A light emitting device of one embodiment of the present disclosure includes: a substrate; a light emitting element disposed above the substrate, and having electrodes on respective upper surface and lower surface of the light emitting element; and a light shielding layer provided between the substrate and the light emitting element.

Abstract: A light emitting device including a light emitting layer that is provided between a first face and a second face, a first electrode that is provided on the first face and is electrically coupled to the light emitting layer, a second electrode that is provided on the second face and is electrically coupled to the light emitting layer, and a non-selected electrode that is provided on the first face and is in a state not electrically coupled to a potential supply source.

Abstract: There is provided a display device including a plurality of unit regions disposed adjacent to each other, a first region that is provided in each of the unit regions, and emits first light, and a second region that is provided outside the first region in each of the unit regions, and emits second light. The second light is different from the first light in at least one of luminance, wavelength, or surface-reflection component, the second regions are provided between adjacent ones of the first regions, and a difference in luminance, wavelength, or surface-reflection component between the second light to be emitted from adjacent ones of the unit regions is smaller than a difference in luminance, wavelength, or surface-reflection component between the first light and the second light in a same one of the unit regions.

Abstract: There is provided a display device including a plurality of unit regions disposed adjacent to each other, a first region that is provided in each of the unit regions, and emits first light, and a second region that is provided outside the first region in each of the unit regions, and emits second light. The second light is different from the first light in at least one of luminance, wavelength, or surface-reflection component, the second regions are provided between adjacent ones of the first regions, and a difference in luminance, wavelength, or surface-reflection component between the second light to be emitted from adjacent ones of the unit regions is smaller than a difference in luminance, wavelength, or surface-reflection component between the first light and the second light in a same one of the unit regions.

Abstract: [Object] A light-emitting element includes: a semiconductor layer; a first electrode portion; a second electrode portion; a first insulating layer; and a metal layer. The semiconductor layer includes an active layer, a first-conductivity-type layer, and a second-conductivity-type layer, and has a semiconductor-layer side surface including a side surface of the active layer, a side surface of the first-conductivity-type layer, and a side surface of the second-conductivity-type layer. The first electrode portion is connected to the first-conductivity-type layer. The second electrode portion is connected to the second-conductivity-type layer. The first insulating layer is in contact at least with a part of the semiconductor-layer side surface, the part of the semiconductor-layer side surface corresponding to a part of the side surface of the active layer.

Abstract: A light-emitting device assembly includes a light-emitting device including a light-emitting layer, a first electrode, and a second electrode, and a first connecting portion and a second connecting portion provided on a base, in which the first connecting portion and the second connecting portion are separated from each other by a separation portion, the base is exposed from the separation portion, a wide portion is on a first connecting portion side of the separation portion, the first electrode includes a first portion and a second portion, the second portion of the first electrode is connected to the first connecting portion, the first portion of the first electrode extends from the second portion of the first electrode, and an orthographic projection image of the first portion of the first electrode with respect to the base and the wide portion of the separation portion overlap with each other at least in part.

Abstract: A light emitting device includes a light emitting part 21, a black layer 51, and a light diffusion part 41 that is formed on or above the black layer 51. The black layer 51 is provided with an opening part 53 that allows light emitted from the light emitting part to pass through it. Then, light having passed through the opening part 53 passes through the light diffusion part 41.

Abstract: There is provided a display device including: a plurality of unit regions disposed adjacent to each other; a first region that is provided in each of the unit regions, and emits first light; and a second region that is provided outside the first region in each of the unit regions, and emits second light, the second light being different from the first light in at least one of luminance, wavelength, or surface-reflection component, the second regions being provided between adjacent ones of the first regions, and a difference in luminance, wavelength, or surface-reflection component between the second light to be emitted from adjacent ones of the unit regions being smaller than a difference in luminance, wavelength, or surface-reflection component between the first light and the second light in a same one of the unit regions.

Abstract: [Solving Means] A semiconductor unit includes a substrate, a semiconductor device, and a plating layer. The semiconductor device includes a semiconductor layer and one or more electrodes, the one or more electrodes being connected to the semiconductor layer and including a platinum-group element as a main material. The plating layer bonds the substrate and the electrode.

Abstract: There is provided a light emitting apparatus, including a plurality of light emitting elements having biased light properties; and a mounting substrate where the light emitting elements are arranged such that the biased light properties are complemented within a group including at least two light emitting elements among a plurality of the light emitting elements. Also, there are provided a light emitting unit, a display apparatus, an electronic device and a light emitting element using a plurality of point light sources.

Abstract: A light emitting device of one embodiment of the present disclosure includes: a substrate; a light emitting element disposed above the substrate, and having electrodes on respective upper surface and lower surface of the light emitting element; and a light shielding layer provided between the substrate and the light emitting element.

Abstract: A light-emitting device assembly includes: a light-emitting device 11 including a light-emitting layer, a first electrode 31, and a second electrode 32; and a first connecting portion 41 and a second connecting portion 42 provided on a base 40, in which the first connecting portion 41 and the second connecting portion 42 are separated from each other by a separation portion 43, the base 40 being exposed from the separation portion 43, a wide portion 44 is provided on a first connecting portion side of the separation portion 43, the first electrode 31 includes a first portion 31A and a second portion 31B, the second portion 31B of the first electrode is connected to the first connecting portion 41, the first portion 31A of the first electrode extends from the second portion 31B of the first electrode, and an orthographic projection image of the first portion 31A of the first electrode with respect to the base 40 and the wide portion 44 of the separation portion 43 overlap with each other at least in part.

Abstract: A light emitting device including: a light emitting layer that is provided between a first face and a second face; a first electrode that is provided on the first face and is electrically coupled to the light emitting layer; a second electrode that is provided on the second face and is electrically coupled to the light emitting layer; and a non-selected electrode that is provided on the first face and is in a state not electrically coupled to a potential supply source.

Abstract: A light emitting device includes a light emitting part 21, a black layer 51, and a light diffusion part 41 that is formed on or above the black layer 51. The black layer 51 is provided with an opening part 53 that allows light emitted from the light emitting part to pass through it. Then, light having passed through the opening part 53 passes through the light diffusion part 41.

Abstract: There is provided a light emitting apparatus, including a plurality of light emitting elements having biased light properties; and a mounting substrate where the light emitting elements are arranged such that the biased light properties are complemented within a group including at least two light emitting elements among a plurality of the light emitting elements. Also, there are provided a light emitting unit, a display apparatus, an electronic device and a light emitting element using a plurality of point light sources.

Abstract: There is provided a light emitting apparatus, including a plurality of light emitting elements having biased light properties; and a mounting substrate where the light emitting elements are arranged such that the biased light properties are complemented within a group including at least two light emitting elements among a plurality of the light emitting elements. Also, there are provided a light emitting unit, a display apparatus, an electronic device and a light emitting element using a plurality of point light sources.

Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.