Abstract: A surface treatment device includes at least one paddle in a plate shape, in a surface treatment tank, for stirring a surface treatment solution near a substrate by reciprocally moving the paddle with respect to the substrate. The paddle is configured by integrally forming multiple square bars provided in a depth direction or a horizontal direction of the surface treatment solution at regular intervals along the substrate. A liquid draining member for draining a liquid is arranged in at least one side of an end of the paddle.

Abstract: There is provided a solid-state imaging device capable of preventing the sensitivity difference from being generated between the pixels. The fixed imaging device of the present disclosure includes: a first pixel; and a second pixel located in a first direction of the first pixel, in which each of the first and second pixels includes a first transistor and a second transistor, and the first and second transistors in the second pixel are disposed periodically in the first direction with respect to the first and second transistors in the first pixel.

Abstract: A method for programming a target memory cell in a memory array of a non-volatile memory system, the method comprising defining a default read biasing voltage value and a default verify biasing voltage value for each program state of a target memory cell of a memory structure, determining a location of a target memory cell within the memory structure and, based upon the determined location of the target memory cell, applying a first incremental offset voltage to the default read biasing voltage value with respect to each program state, and applying a second incremental offset voltage to the default verify biasing voltage value with respect to each program state.

Abstract: A method for surface treatment includes performing blasting on a surface of a workpiece, and irradiating the blasted surface of the workpiece with electron beam.

Abstract: A method for programming a target memory cell in a memory array of a non-volatile memory system, the method comprising defining a default read biasing voltage value and a default verify biasing voltage value for each program state of a target memory cell of a memory structure, determining a location of a target memory cell within the memory structure and, based upon the determined location of the target memory cell, applying a first incremental offset voltage to the default read biasing voltage value with respect to each program state, and applying a second incremental offset voltage to the default verify biasing voltage value with respect to each program state.

Abstract: The purpose of the present invention is to provide a surface treatment device and a paddle with improved strength and uniform plating thickness by uniformly stirring surface treatment solution near an object to be plated. Also, the purpose of the present invention is to provide a surface treatment method capable of stirring for a long period of time, by uniformizing plating thickness, and by improving a strength of a paddle.

Abstract: A plating solution containing a leveler is brought into contact with silica particles with an average particle diameter of 500 ?m or less to remove impurities from the plating solution.

Abstract: A surface treatment device includes at least one paddle in a plate shape, in a surface treatment tank, for stirring a surface treatment solution near an object to be plated by reciprocally moving the paddle with respect to the object to be plated. The paddle is configured by integrally forming multiple square bars provided in a depth direction or a horizontal direction of the surface treatment solution at regular intervals along the object to be plated. A liquid draining member for draining a liquid is arranged in at least one side of an end of the paddle.

Abstract: Provided is an evaluation apparatus of a semiconductor device suppressing a discharge occurring in a part of a semiconductor device at a time of evaluating its electrical characteristics. The evaluation apparatus of a semiconductor device includes a stage to support a semiconductor device; a plurality of probes located above the stage; an insulating body having a frame shape to surround the plurality of probes and located above the stage; and an evaluation part injecting a current into the semiconductor device via the plurality of probes. The insulating body includes a tip portion having flexibility and facing the stage. The tip portion includes, in one side surface of the tip portion, a contact surface to come in contact with the semiconductor device by a deformation of the tip portion toward an inner side or an outer side of the frame shape.

Abstract: The purpose of the present invention is to provide an electrolytic Sn or Sn alloy plating solution capable of lowering Pb concentration. An electrolytic Sn or Sn alloy plating solution for forming a plated article for solder bonding, at least comprising: a sulfur-based compound; an Sn salt; one or more types of acids or water-soluble salts thereof selected from inorganic acid, organic acid or water-soluble salt thereof; and a surfactant, wherein the sulfur-based compound is a thiol compound represented by following general formula (Formula. A), a salt of the thiol compound (Formula A), or a disulfide compound (Formula B).

Abstract: An electrolytic tin plating solution contains a compound serving as a source of supply of tin ions and an unsaturated aldehyde compound having a heterocyclic group.

Abstract: An evaluation apparatus includes an insulating plate, a plurality of probes fixed to the insulating plate, an insulating portion having a connection portion connected to the insulating plate in a detachable manner and a tip portion continuous with the connection portion, the tip portion being narrower than the connection portion, an insulator formed by combining the insulating portions to surround the plurality of probes in planar view, and an evaluation unit for passing currents through the plurality of probes to evaluate electrical characteristics of an object to be measured.

Abstract: An evaluation apparatus for a semiconductor device includes: a chuck stage that has a surface on which a plurality of probe holes are formed and sucks a semiconductor device; and a plurality of in-chuck probes that have first ends which are inserted into the respective probe holes, and second ends which protrude from the surface of the chuck stage, and come into contact with an arrangement surface of the semiconductor device arranged in the chuck stage, wherein a height protruding from the surface of the chuck stage of at least one of the in-chuck probes is different from a height protruding from the surface of the chuck stage of the other in-chuck probe.

Abstract: A separator for fuel cells includes 15-40 parts by mass of a resin and 85-60 parts by mass of conductive materials that have higher electrical conductivities than the resin, while having the forms of particles and fibers. The conductive materials mainly include graphite particles and carbon fibers so that the graphite particles are included in a larger amount than the carbon fibers in terms of mass ratio.

Abstract: An evaluation apparatus for a semiconductor device includes: a chuck stage that has a surface on which a plurality of probe holes are formed and sucks a semiconductor device; and a plurality of in-chuck probes that have first ends which are inserted into the respective probe holes, and second ends which protrude from the surface of the chuck stage, and come into contact with an arrangement surface of the semiconductor device arranged in the chuck stage, wherein a height protruding from the surface of the chuck stage of at least one of the in-chuck probes is different from a height protruding from the surface of the chuck stage of the other in-chuck probe.

Abstract: The purpose of the present invention is to provide a surface treatment device and a paddle with improved strength and uniform plating thickness by uniformly stirring surface treatment solution near an object to be plated. Also, the purpose of the present invention is to provide a surface treatment method capable of stirring for a long period of time, by uniformizing plating thickness, and by improving a strength of a paddle.

Abstract: Provided is a technique capable of preventing occurrence of partial discharge. An evaluation apparatus includes a probe disposed on an undersurface of an upper component; a sidewall part disposed on the undersurface of the upper component and enclosing sides of the probe; and a first gas supplying part. The first gas supplying part is capable of supplying a gas to a to-be-measured object that is placed on a stage when the sidewall part comes in proximity to the stage, and to a space enclosed by the stage, the sidewall part, and the upper component when the sidewall part is in contact with the stage.

Abstract: Provided is a probe position inspection device that can inspect with ease and higher precision a position of a probe included in a semiconductor evaluation apparatus. The probe includes an inspection magnetic field producing part that produces a magnetic field corresponding to a contact point with a subject semiconductor apparatus. The probe position inspection device includes: a base part having a front surface that can be contacted by the probe, and including a plurality of magnetic field sensors placed in a plane parallel to the front surface, each of the magnetic field sensors sensing the magnetic field produced by the inspection magnetic field producing part; and an output part electrically connected to the magnetic field sensors, the output part outputting, based on the magnetic field, a signal corresponding to each of the magnetic field sensors.

Abstract: A purpose of the present invention is to provide a technique capable of suppressing an electric discharge during evaluation. A semiconductor device includes: a semiconductor base body having an element region and a terminal region; a plurality of electrode pads disposed in an area that is in the element region of the semiconductor base body and is separated from the terminal region, an insulating protection film having an opening provided above each of the electrode pads; and a plurality of conductive layers disposed on the protection film and electrically connected to the plurality of electrode pads, respectively, through the opening. In a planar view, each of the conductive layers is extended to the terminal region or the vicinity of the terminal region.

Abstract: A wound wire is wound around a core assembly so that both ends are short-circuited. In a coupling pin insertion state in which a coupling pin is inserted in a through hole of the core assembly, outer-peripheral space parts of respective divided core portions of the core assembly are disposed so as to overlap in plan view. Consequently, an air gap is formed in a part of a side surface of the core assembly. Before formation of a covering member, a main wire is caused to pass through the air gap and is thus disposed in a wiring hole of the core assembly. Then, the covering member for closing the air gap is provided on an outer peripheral surface side of the core assembly including the air gap so that a core structure is obtained.