Abstract: A semiconductor device includes a mounting substrate; a first wiring electrode and a second wiring electrode disposed on a main surface of a mounting substrate; an interposing member disposed between the first wiring electrode and the second wiring electrode; a semiconductor element flip-chip connected with the first wiring electrode and the second wiring electrode via a first electrical connection member and a second electrical connection member so as to at least partially overlap the interposing member in a top surface view; and a resin disposed in contact with the semiconductor element and the mounting substrate. The wettability of the interposing member to the resin is higher than that of the mounting substrate to the resin. The resin is disposed in contact with the semiconductor element and the interposing member.

Abstract: A light emitting device includes a wiring substrate including an n-electrode and a p-electrode wired on a surface of the substrate, a light emitting element including an n-pad electrode joined directly to the n-electrode and a p-pad electrode joined directly to the p-electrode, a first gap between the n-electrode and the p-electrode, with the light emitting element being installed across that first gap, and an underfill, which fills a space between the wiring substrate and the light emitting element. At least one of the n-pad electrode and the p-pad electrode is divided into two islands with a linear shape second gap therebetween. The second gap is continuous with a linear shape third gap between the n-pad electrode and the p-pad electrode.

Abstract: A semiconductor device includes a mounting substrate; a first wiring electrode and a second wiring electrode disposed on a main surface of a mounting substrate; an interposing member disposed between the first wiring electrode and the second wiring electrode; a semiconductor element flip-chip connected with the first wiring electrode and the second wiring electrode via a first electrical connection member and a second electrical connection member so as to at least partially overlap the interposing member in a top surface view; and a resin disposed in contact with the semiconductor element and the mounting substrate. The wettability of the interposing member to the resin is higher than that of the mounting substrate to the resin. The resin is disposed in contact with the semiconductor element and the interposing member.

Abstract: A light emitting device includes a wiring substrate including an n-electrode and a p-electrode wired on a surface of the substrate, a light emitting element including an n-pad electrode joined directly to the n-electrode and a p-pad electrode joined directly to the p-electrode, a first gap between the n-electrode and the p-electrode, with the light emitting element being installed across that first gap, and an underfill, which fills a space between the wiring substrate and the light emitting element. At least one of the n-pad electrode and the p-pad electrode is divided into two islands with a linear shape second gap therebetween. The second gap is continuous with a linear shape third gap between the n-pad electrode and the p-pad electrode.

Abstract: A light-emitting device includes a base material having a conductor layer on a surface thereof, the conductor layer being configured to be connected to an external power source, a light-emitting element mounted on the base, a phosphor layer arranged above the light-emitting element, and a resin layer contacting both of the phosphor layer and the conductor layer and containing heat-conductive particles dispersed therein. The heat-conductive particles have a thermal conductivity of not less than 100 W/m·K and an insulator property or a semiconductor property.

Abstract: A light-emitting device includes a thermally conductive substrate, a wiring electrode formed on the thermally conductive substrate, a resist formed on the wiring electrode except a terminal thereof, and a light-emitting element that is disposed in an element mounting region of the thermally conductive substrate and electrically connected to the terminal of the wiring electrode. A heat dissipation hole is formed in a region of the resist outside the element mounting region so as to expose a surface of the thermally conductive substrate.

Abstract: A method of manufacturing a semiconductor device comprises a mounting step of mounting a semiconductor element having an Au—Sn layer on a substrate, wherein the mounting step includes a paste supplying step of supplying an Ag paste having an Ag nanoparticle onto the substrate, a device mounting step of mounting a side of the Au—Sn layer of the semiconductor element on the Ag paste, and a bonding step of alloying the Au—Sn layer and the Ag paste to bond the semiconductor element to the substrate, wherein the Au—Sn layer has a content rate of Au of 50 at % to 85 at %.

Abstract: An LED mounting substrate includes a base substrate, a conductive pattern formed on the base substrate and including a recessed portion on an upper surface thereof, and a light reflecting film formed in an inter-pattern gap of the conductive pattern on the base substrate and in the recessed portion of the conductive pattern.

Abstract: A light-emitting device includes a thermally conductive substrate, a wiring electrode formed on the thermally conductive substrate, a resist formed on the wiring electrode except a terminal thereof, and a light-emitting element that is disposed in an element mounting region of the thermally conductive substrate and electrically connected to the terminal of the wiring electrode. A heat dissipation hole is formed in a region of the resist outside the element mounting region so as to expose a surface of the thermally conductive substrate.

Abstract: A light-emitting device includes a base material having a conductor layer on a surface thereof, the conductor layer being configured to be connected to an external power source, a light-emitting element mounted on the base, a phosphor layer arranged above the light-emitting element, and a resin layer contacting both of the phosphor layer and the conductor layer and containing heat-conductive particles dispersed therein. The heat-conductive particles have a thermal conductivity of not less than 100 W/m·K and an insulator property or a semiconductor property.

Abstract: There is a reflective layer covering almost the entire surface of the light emitting portion except the portions where the light emitting elements are arranged, it is possible to increase the reflectivity of the light emitting portion to realize a higher luminance. In addition, the heat generated from the light emitting elements can be dissipated through the reflective layer, so that it is possible to prevent overheat of the light emitting device, and it is thus possible to improve the reliability of the light emitting device.

Abstract: An LED mounting substrate includes a base substrate, a conductive pattern formed on the base substrate and including a recessed portion on an upper surface thereof, and a light reflecting film formed in an inter-pattern gap of the conductive pattern on the base substrate and in the recessed portion of the conductive pattern.

Abstract: There is a reflective layer covering almost the entire surface of the light emitting portion except the portions where the light emitting elements are arranged, it is possible to increase the reflectivity of the light emitting portion to realize a higher luminance. In addition, the heat generated from the light emitting elements can be dissipated through the reflective layer, so that it is possible to prevent overheat of the light emitting device, and it is thus possible to improve the reliability of the light emitting device.

Abstract: A device is provided for measuring an angle between two intersecting surfaces of a work. The device includes a light emitting device for inducing a light pattern on the surfaces of the work, a camera for picking up the pattern, and an image processor for processing the picture of the pattern and obtaining the angle of the work.

Abstract: In a thermal cutting machine provided with an NC system of the type having a manual pulse generator allowing the operator to manually adjust the working head height from a workpiece a profile control apparatus is provided to maintain a reference distance between the head and a non-flat workpiece. The profile control apparatus is installed in the cutting machine, by adding only a head distance sensor and a Z-axis controller in parallel with the manual pulse generator via a selector switch. The Z-axis controller generates a pulse signal having a frequency proportional to a differential voltage between a reference head height determined by the NC system and an actual head height detected by the head distance sensor to correct the reference head height from the non-flat workpiece. The V-F conversion characteristics of the Z-axis controller are of Z-type, in particular, to reduce the profile error.