Abstract: A semiconductor device includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, a post electrode formed on the pad electrode and made of a copper film, a solder ball electrode formed on the post electrode and made of ternary alloy containing tin, a terminal connected to the solder ball electrode and formed on a front surface of a wiring board, and a sealing material filling a gap between the semiconductor substrate and the wiring board. The post electrode includes a cylindrical stem portion and an overhanging portion positioned in an upper part of the stem portion and protruding to an outer side of the stem portion, the solder ball electrode is connected to an upper surface of the post electrode over the stem portion and the overhanging portion, and a sidewall of the stem portion contacts with the sealing material over the entire circumference thereof.

Abstract: The present invention makes it possible to: reduce the manufacturing cost of a semiconductor device having a redistribution layer; and further improve the reliability of a semiconductor device having a redistribution layer. A feature point of First Embodiment is that an opening and a redistribution layer gutter are formed integrally in a polyimide resin film of a single layer as shown in FIG. 5. It is thereby possible to: form a redistribution layer in the polyimide resin film of a single layer; and hence inhibit a wiring material (silver) including the redistribution layer from migrating.

Abstract: A semiconductor device includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, a post electrode formed on the pad electrode and made of a copper film, a solder ball electrode formed on the post electrode and made of ternary alloy containing tin, a terminal connected to the solder ball electrode and formed on a front surface of a wiring board, and a sealing material filling a gap between the semiconductor substrate and the wiring board. The post electrode includes a cylindrical stem portion and an overhanging portion positioned in an upper part of the stem portion and protruding to an outer side of the stem portion, the solder ball electrode is connected to an upper surface of the post electrode over the stem portion and the overhanging portion, and a sidewall of the stem portion contacts with the sealing material over the entire circumference thereof.

Abstract: In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract: To improve an integration degree of a semiconductor device. The semiconductor device includes a plurality of wiring layers formed on the semiconductor substrate, a pad electrode formed on an uppermost wiring layer among the plurality of wiring layers, a base insulating film having a pad opening above the pad electrode, and a rewiring electrically connected to the pad electrode and extending over the base insulating film. Further, the semiconductor device includes a protective film covering an upper surface of the rewiring and having an external pad opening exposing part of the upper surface of the rewiring, an external pad electrode electrically connected to the rewiring through the external pad opening and extending over the protective film, and a wire connected to the external pad electrode. Part of the external pad electrode is located in a region outside the rewiring.

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract: The present invention makes it possible to: reduce the manufacturing cost of a semiconductor device having a redistribution layer; and further improve the reliability of a semiconductor device having a redistribution layer. A feature point of First Embodiment is that an opening and a redistribution layer gutter are formed integrally in a polyimide resin film of a single layer as shown in FIG. 5. It is thereby possible to: form a redistribution layer in the polyimide resin film of a single layer; and hence inhibit a wiring material (silver) including the redistribution layer from migrating.

Abstract: An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, an interlayer insulating film is formed and, over the interlayer insulating film, a pad is formed. Over the interlayer insulating film, an insulating film is formed so as to cover the pad. In the insulating film, an opening is formed to expose a part of the pad. The pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component. Over the Al-containing conductive film in a region overlapping the opening in plan view, a laminated film including a barrier conductor film, and a metal film over the barrier conductor film is formed. The metal film is in an uppermost layer. The barrier conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a Ti film, a TiN film, a Ta film, a TaN film, a W film, a WN film, a TiW film, and a TaW film.

Abstract: A method of controlling a robot system including an articulated robot and a control device is provided. The articulated robot includes links connected by joints, motors configured to drive the joints respectively, and detection devices configured to detect rotation amounts of the joints respectively. The control device controls the motors. The method includes the steps of, by the control device, recording movement information of the joints based on outputs of the detection devices; when detecting an abnormality in the operation of the articulated robot, determining presence or absence of a failure in the articulated robot based on the movement information recorded in at least a period from before detection of the abnormality until detection of the abnormality; and specifying a failure portion of the articulated robot if it is determined that there is a failure in the articulated robot in the step of determining.

Abstract: In a mobile terminal having a security function, both convenience and security protection are realized so as to prevent a user from feeling bothersome. A mobile phone has an operation control unit which sets the operation of various functions of the mobile terminal to be unusable at any timing. When a used state determination unit determines that the mobile phone is not in an abnormal state and not left, the operation control unit controls operation of the various functions to maintain usable states.

Abstract: A circular spline is secured to a housing. An output member is positioned relative to the circular spline, an outer race of a bearing is secured to the housing, and an inner race of the bearing is secured to the output member. A flex spline is positioned relative to the circular spline and secured to the output member. A wave generator is positioned relative to the circular spline, and a support member, by which the wave generator is rotatably supported, is secured to the housing.

Abstract: According to one embodiment, a battery includes an electrode group, at least one positive electrode current collector tab, at least one negative electrode current collector tab, and a case. The case includes a case portion and an edge portion. The edge portion includes a heat sealed part configured to seal the case portion and a non-sealed part. The electrode group is housed in the case portion while an end portion of at least one of the positive electrode current collector tab and the negative electrode current collector tab is provided in the non-sealed part.

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract: In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

Abstract: To suppress peeling of an Au pad for external coupling provided in a rewiring containing Cu as a main component. On the surface of a rewiring including a two-layer film in which a first Ni film is laminated on the top of a Cu film, a pad to which a wire is coupled is formed. The pad includes a two-layer film in which an Au film is laminated on the top of a second Ni film and formed integrally so as to cover the top surface and the side surface of the rewiring. Due to this, the area of contact between the rewiring and the pad increases, and therefore, the pad becomes difficult to be peeled off from the rewiring.

Abstract: A nonaqueous electrolyte secondary battery includes an electrode assembly having a high-density positive electrode in which a positive electrode active material layer is formed on at least one surface of a positive electrode current collector, a high-density negative electrode in which a negative electrode active material layer is formed on at least one surface of a negative electrode current collector, and a separator interposed between the positive and negative electrodes, and has a structure in which the electrode assembly is impregnated with a nonaqueous electrolyte, wherein the specific surface area per unit area of the positive electrode active material layer of the positive electrode is 0.5 to 1.0 times the specific surface area per unit area of the negative electrode active material layer of the negative electrode which opposes the positive electrode with the separator sandwiched between them.

Abstract: With a general wafer level package process, in order to prevent corrosion of an aluminum type pad electrode in a scribe region in a plating process, the pad electrode is covered with a pad protective resin film at the same layer as an organic type protective film in a product region. However, this makes it impossible to perform the probe test on the pad electrode in the scribe region after rewiring formation. The present invention provides a method for manufacturing a semiconductor integrated circuit device of a wafer level package system. The organic type protective films in the chip regions and the scribe region are mutually combined to form an integral film pattern. In a pelletization step, the surface layer portion including the organic type protective film at the central part of the scribe region is first removed by laser grooving, to form a large-width groove. Then, a dicing processing of the central part in this groove results in separation into the chip regions.

Abstract: Adhesive strength between a rewiring and a solder bump is improved in a semiconductor integrated circuit device in which a bump electrode is connected to a land section of the rewiring. The land section 20A of the rewiring 20 is formed by a five-layer metal film (a barrier metal film 13, a seed film 14, a Cu film 15, a first Ni film 16, and a second Ni film 17) constituting the rewiring 20, the uppermost-layer second Ni film 17 has a larger area than that of the other metal films (the barrier metal film 13, the seed film 14, the Cu film 15, and the first Ni film 16). A solder bump 21 is connected to the surface of the second Ni film 17. At the end portion of the solder bump 21, a polyimide resin film 22 is formed directly under the second Ni film 17.

Abstract: A semiconductor-encapsulating liquid epoxy resin composition comprises (A) a liquid epoxy resin, (B) an aromatic amine curing agent, and (C) an inorganic filler comprising an inorganic filler A which is a silica having an average particle size of 0.1 to 3 ?m, and an inorganic filler B which is an amorphous nanosilica having an average particle size of 5 to 70 nm and having its surface treated with a coupling agent represented by the following formula (1) and/or (2): wherein n is an integer of 1 to 5, and m is 1 or 2.