Patents by Inventor Akitaka Shimizu

Akitaka Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11024514
    Abstract: There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: June 1, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takuya Abe, Hidenori Miyoshi, Akitaka Shimizu, Koichi Nagakura
  • Publication number: 20210151326
    Abstract: A method of selectively etching a silicon nitride film includes a first step of disposing a target substrate having the silicon nitride film formed thereon in a processing space, a second step of introducing a gas containing H and F into the processing space, and a third step of selectively introducing radicals of an inert gas into the processing space.
    Type: Application
    Filed: May 11, 2018
    Publication date: May 20, 2021
    Inventors: Akitaka SHIMIZU, Shuichiro UDA, Takeshi SAITO, Taiki KATO
  • Patent number: 10985029
    Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a process space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first as supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: April 20, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroyuki Ogawa, Tomoya Okubo, Akitaka Shimizu
  • Patent number: 10975468
    Abstract: There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: April 13, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroki Kishi, Mitsuru Hashimoto, Keiichi Shimoda, Eiichi Nishimura, Akitaka Shimizu
  • Publication number: 20210104412
    Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.
    Type: Application
    Filed: November 13, 2020
    Publication date: April 8, 2021
    Inventors: Keiko HADA, Akitaka SHIMIZU, Koichi NAGAKURA, Mitsuhiro TACHIBANA
  • Publication number: 20210090896
    Abstract: An etching method includes preparing a substrate having an etching target portion formed on a silicon-containing portion, plasma-etching the etching target portion of the substrate into a predetermined pattern by plasma of a processing gas containing a CF-based gas, and removing a damage layer formed due to implantation of C and F into the silicon-containing portion exposed at a bottom of the predetermined pattern by the plasma etching. The removing of the damage layer includes forming an oxide of the damage layer by supplying oxygen-containing radicals and fluorine-containing radicals and oxidizing the damage layer with the oxygen-containing radicals while etching the damage layer with the fluorine-containing radicals, and removing the oxide by a radical treatment or a chemical treatment with a gas.
    Type: Application
    Filed: September 21, 2020
    Publication date: March 25, 2021
    Inventor: Akitaka SHIMIZU
  • Patent number: 10923358
    Abstract: In a substrate processing method for etching a silicon oxide layer formed on a surface of a substrate, a surface of the silicon oxide layer is hydrophilized. Then, the silicon oxide layer is etched by supplying a halogen-containing gas to the substrate and sublimating a reaction product generated by reaction between the halogen-containing gas and the silicon oxide layer.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: February 16, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Muneyuki Imai, Akitaka Shimizu
  • Patent number: 10923329
    Abstract: An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: February 16, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Eiichi Nishimura, Akitaka Shimizu, Fumiko Yamashita, Daisuke Urayama
  • Patent number: 10903083
    Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: January 26, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Keiko Hada, Akitaka Shimizu, Koichi Nagakura, Mitsuhiro Tachibana
  • Publication number: 20200321195
    Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.
    Type: Application
    Filed: June 18, 2020
    Publication date: October 8, 2020
    Inventors: Shigeki DOBA, Hiroyuki OGAWA, Hajime NAITO, Akitaka SHIMIZU, Tatsuo MATSUDO
  • Patent number: 10734201
    Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: August 4, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shigeki Doba, Hiroyuki Ogawa, Hajime Naito, Akitaka Shimizu, Tatsuo Matsudo
  • Publication number: 20200118830
    Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a process space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first as supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.
    Type: Application
    Filed: December 11, 2019
    Publication date: April 16, 2020
    Inventors: Hiroyuki OGAWA, Tomoya OKUBO, Akitaka SHIMIZU
  • Publication number: 20200111646
    Abstract: An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.
    Type: Application
    Filed: September 11, 2019
    Publication date: April 9, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Eiichi NISHIMURA, Akitaka SHIMIZU, Fumiko YAMASHITA, Daisuke URAYAMA
  • Publication number: 20200035504
    Abstract: There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.
    Type: Application
    Filed: July 26, 2019
    Publication date: January 30, 2020
    Inventors: Takuya ABE, Hidenori MIYOSHI, Akitaka SHIMIZU, Koichi NAGAKURA
  • Patent number: 10541145
    Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a processing space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first gas supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: January 21, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroyuki Ogawa, Tomoya Okubo, Akitaka Shimizu
  • Publication number: 20190109012
    Abstract: In a substrate processing method for etching a silicon oxide layer formed on a surface of a substrate, a surface of the silicon oxide layer is hydrophilized. Then, the silicon oxide layer is etched by supplying a halogen-containing gas to the substrate and sublimating a reaction product generated by reaction between the halogen-containing gas and the silicon oxide layer.
    Type: Application
    Filed: February 17, 2017
    Publication date: April 11, 2019
    Inventors: Muneyuki IMAI, Akitaka SHIMIZU
  • Patent number: 10254669
    Abstract: The present invention relates to a process for producing a toner for development of electrostatic images, including step (1) of mixing a releasing agent and a water dispersion of resin particles (A) to obtain a water dispersion of releasing agent particles; step (2) of mixing the obtained water dispersion of the releasing agent particles and a water dispersion of resin particles (B) to aggregate the releasing agent particles and the resin particles (B), thereby obtaining aggregated particles; and step (3) of coalescing the obtained aggregated particles to obtain coalesced particles, in which the resin particles (A) include a composite resin including a segment (a1) constituted of a polyester resin and a vinyl-based resin segment (a2) containing a constitutional unit derived from a styrene-based compound; and a resin constituting the resin particles (B) includes a segment (b1) constituted of a polyester resin in an amount of not less than 50% by mass.
    Type: Grant
    Filed: December 24, 2015
    Date of Patent: April 9, 2019
    Assignee: KAO CORPORATION
    Inventor: Akitaka Shimizu
  • Publication number: 20180327901
    Abstract: There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.
    Type: Application
    Filed: July 24, 2018
    Publication date: November 15, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hiroki KISHI, Mitsuru HASHIMOTO, Keiichi SHIMODA, Eiichi NISHIMURA, Akitaka SHIMIZU
  • Publication number: 20180286696
    Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a processing space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first gas supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.
    Type: Application
    Filed: March 29, 2018
    Publication date: October 4, 2018
    Inventors: Hiroyuki OGAWA, Tomoya OKUBO, Akitaka SHIMIZU
  • Patent number: 10053773
    Abstract: There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: August 21, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroki Kishi, Mitsuru Hashimoto, Keiichi Shimoda, Eiichi Nishimura, Akitaka Shimizu