Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).

Abstract: When an end-face-emitting photonic crystal laser element 10 is seen in an X axis, one end of an upper electrode E2 overlaps a laser light exit surface SF, the upper electrode E2 and an opposite end face SB are separated from each other, the upper electrode E2 is separated from both lateral end faces SR, SL, and one end of an active layer 3B overlaps the laser light exit surface SF.

Abstract: Provided are: a laser-bonded structure wherein deterioration of strength or rigidity of a third plate is suppressed, said third plate being disposed by being spaced apart from at least two metal plates; and a laser bonding method. The laser-bonded structure is provided with: at least two metal plates, which have two or more overlapping portions where the metal plates are disposed in a state wherein the metal plates are overlapping each other, and which are bonded by means of laser welding sections; and a third plate that is disposed by being spaced apart from the overlapping portions. The third plate has formed therein penetrating sections of a number smaller than the number of the laser welding sections, said penetrating sections penetrating the third plate, and having laser light radiated to the overlapping portions.

Abstract: A vehicle frame structure includes a pair of hat-shaped panels that form a portion of a vehicle, each hat-shaped panel having a hat-shaped cross-section, the pair of hat-shaped panels facing each other and forming a closed sectional portion; a partition panel that is sandwiched by the pair of hat-shaped panels, and divides an inside of the closed sectional portion; and a laser welded portion where all of four or more plates including the pair of hat-shaped panels and the partition panel are overlapped and welded together at an identical position by laser welding.

Abstract: According to a finite difference between inverse numbers of arrangement periods (a1 and a2) in first and second periodic structures, when seen in a thickness direction of a semiconductor laser element, at least two laser beams that form a predetermined angle (??) with respect to a lengthwise direction of a first driving electrode (E2) are generated in the semiconductor laser element, one of the laser beams is set to be totally reflected in a light emission end surface, and a refractive angle (?3) of the other laser beam is set to be less than 90 degrees.

Abstract: A joint structure for a vehicle body member, the vehicle body member including at least two panel members, the at least two panel members constituting part of a vehicle body and being formed of a steel plate, the joint structure includes: spot-welds formed by spot-welding the at least two panel members to each other at a predetermined spot interval such that a predetermined clearance is formed between the at least two panel members; a laser-weld formed by laser-welding the at least two panel members to each other between the spot-welds; and an electrodeposition coating film portion that covers a surface of each of the at least two panel members, at least part of the electrodeposition coating film portion filling the clearance.

Abstract: A laser joint structure includes a metal outer cylinder, a metal inner member that is provided inside of the outer cylinder, in which a joining portion is arranged following an inner shape of the outer cylinder, the joining portion being arranged contacting or close to the outer cylinder; and a laser weld that is provided on a mating portion of the outer cylinder and a corresponding mating portion of the joining portion, and in which a circular cylindrical nugget is formed by melting the outer cylinder and the joining portion, which is accomplished by emitting a laser light from outside the outer cylinder.

Abstract: A vehicle-body member joining structure includes: laser welded portions at which at least two panel members each constituting part of a vehicle body and made of a steel sheet are joined to each other by laser welding in a state where a predetermined gap is formed therebetween; and an electrodeposition coating film portion covering surfaces of the panel members and filling at least part of the gap.

Abstract: A semiconductor light emitting element includes an electrode 8, an active layer 3, a photonic crystal layer 4, and an electrode 9. Conductivity types between the active layer 3 and the electrode 8 and between the active layer 3 and the electrode 9 differ from each other. The electrode 8, the active layer 3, the photonic crystal layer 4, and the electrode 9 are stacked along the X-axis. The X-axis passes through a central part 8a2 of the opening 8a when viewed from the axis line direction of the X-axis. The end 9e1 of the electrode 9 and the end 8e1 of the opening 8a substantially coincide with each other when viewed from the axis line direction of the X-axis.

Abstract: According to a finite difference between inverse numbers of arrangement periods (a1 and a2) in first and second periodic structures, when seen in a thickness direction of a semiconductor laser element, at least two laser beams that form a predetermined angle (??) with respect to a lengthwise direction of a first driving electrode (E2) are generated in the semiconductor laser element, one of the laser beams is set to be totally reflected in a light emission end surface, and a refractive angle (?3) of the other laser beam is set to be less than 90 degrees.

Abstract: When an end-face-emitting photonic crystal laser element 10 is seen in an X axis, one end of an upper electrode E2 overlaps a laser light exit surface SF, the upper electrode E2 and an opposite end face SB are separated from each other, the upper electrode E2 is separated from both lateral end faces SR, SL, and one end of an active layer 3B overlaps the laser light exit surface SF.

Abstract: The semiconductor device comprises a device isolation region formed in a semiconductor substrate, a lower electrode formed in a device region defined by the device isolation region and formed of an impurity diffused layer, a dielectric film of a thermal oxide film formed on the lower electrode, an upper electrode formed on the dielectric film, an insulation layer formed on the semiconductor substrate, covering the upper electrode, a first conductor plug buried in a first contact hole formed down to the lower electrode, and a second conductor plug buried in a second contact hole formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode is not formed in the device isolation region, whereby the short-circuit between the upper electrode and the lower electrode in the cavity can be prevented.

Abstract: A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blend structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.

Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).

Abstract: A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blende structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blende structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.

Abstract: The semiconductor device comprises a device isolation region formed in a semiconductor substrate, a lower electrode formed in a device region defined by the device isolation region and formed of an impurity diffused layer, a dielectric film of a thermal oxide film formed on the lower electrode, an upper electrode formed on the dielectric film, an insulation layer formed on the semiconductor substrate, covering the upper electrode, a first conductor plug buried in a first contact hole formed down to the lower electrode, and a second conductor plug buried in a second contact hole formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode is not formed in the device isolation region, whereby the short-circuit between the upper electrode and the lower electrode in the cavity can be prevented.

Abstract: The semiconductor device comprises a device isolation region 14 formed in a semiconductor substrate 10, a lower electrode 16 formed in a device region 12 defined by the device isolation region and formed of an impurity diffused layer, a dielectric film 18 of a thermal oxide film formed on the lower electrode, an upper electrode 20 formed on the dielectric film, an insulation layer 26 formed on the semiconductor substrate, covering the upper electrode, a first conductor plug 30a buried in a first contact hole 28a formed down to the lower electrode, and a second conductor plug 30b buried in a second contact hole 28b formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode 20 is not formed in the device isolation region 14, whereby the short-circuit between the upper electrode 20 and the lower electrode 16 in the cavity can be prevented. Thus, a capacitor of high reliability can be provided.

Abstract: In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle ?, based on a total reflection critical angle ?c at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior.

Abstract: The semiconductor device comprises a device isolation region 14 formed in a semiconductor substrate 10, a lower electrode 16 formed in a device region 12 defined by the device isolation region and formed of an impurity diffused layer, a dielectric film 18 of a thermal oxide film formed on the lower electrode, an upper electrode 20 formed on the dielectric film, an insulation layer 26 formed on the semiconductor substrate, covering the upper electrode, a first conductor plug 30a buried in a first contact hole 28a formed down to the lower electrode, and a second conductor plug 30b buried in a second contact hole 28b formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode 20 is not formed in the device isolation region 14, whereby the short-circuit between the upper electrode 20 and the lower electrode 16 in the cavity can be prevented. Thus, a capacitor of high reliability can be provided.

Abstract: The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof. The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces.