Patents by Inventor Akiyoshi Yamazaki

Akiyoshi Yamazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11916195
    Abstract: An electrolyte solution containing a compound (1) represented by the formula (1), (wherein R101 and R102 are each individually a substituent such as a C1-C7 alkyl group, and the substituent optionally contains at least one divalent to hexavalent hetero atom in a structure or optionally has a structure obtained by replacing at least one hydrogen atom by a fluorine atom or a C0-C7 functional group) and at least one compound (11) selected from compounds such as a compound represented by formula (11-1) (wherein R111 and R112 are the same as or different from each other and are each a hydrogen atom or the like, and R113 is an alkyl group free from a fluorine atom or the like):
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: February 27, 2024
    Assignee: DAIKIN INDUSTRIES, LTD.
    Inventors: Masakazu Kinoshita, Tomoya Hidaka, Toshiharu Shimooka, Shigeaki Yamazaki, Hisako Nakamura, Takaya Yamada, Yuuki Suzuki, Yoshiko Kuwajima, Kenzou Takahashi, Akiyoshi Yamauchi, Kotaro Hayashi
  • Patent number: 11780946
    Abstract: An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rp01 represents a hydrogen atom or the like; Vp01 represents a single bond or a divalent linking group; Rp02 and Rp03 each independently represents a hydrocarbon group which may have a substituent, or Rp02 and Rp03 are mutually bonded to form a ring; Rp04 represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rp05 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rp06 represents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4
    Type: Grant
    Filed: January 19, 2021
    Date of Patent: October 10, 2023
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Akiyoshi Yamazaki, Daisuke Kawana, Yoshitaka Komuro, Masatoshi Arai, Nobuhiro Michibayashi, Takatoshi Inari
  • Patent number: 11560444
    Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure of a structural unit (u21) represented by general formula (u2-1) shown below, and the volume ratio of the first block, based on all blocks constituting the block copolymer being 42 to 44 vol %: In which RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 is a group derived from a compound represented by formula SHRt1, wherein Rt1 represents a hydrocarbon group having 1 to 5 carbon atoms optionally having a substituent.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: January 24, 2023
    Assignees: TOKYO OHKA KOGYO CO., LTD., TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Teruaki Hayakawa, Seina Yamazaki, Akiyoshi Yamazaki, Daisuke Kawana, Yoshitaka Komuro, Takaya Maehashi, Rin Odashima
  • Patent number: 11261299
    Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure represented by general formula (u2-1), and a block (b22) consisting of a polymer having a repeating structure of a structural unit (u22) containing a silicon atom, and the block (b22) is positioned between the first block and the block (b21) (wherein RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 represents an organic group having a polar group).
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: March 1, 2022
    Assignees: Tokyo Ohka Kogyo Co., Ltd., Tokyo Institute of Technology
    Inventors: Akiyoshi Yamazaki, Daisuke Kawana, Takehiro Seshimo, Teruaki Hayakawa, Lei Dong, Rin Odashima
  • Publication number: 20210230332
    Abstract: An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rp01 represents a hydrogen atom or the like; Vp01 represents a single bond or a divalent linking group; Rp02 and Rp03 each independently represents a hydrocarbon group which may have a substituent, or Rp02 and Rp03 are mutually bonded to form a ring; Rp04 represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rp05 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rp06 represents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4
    Type: Application
    Filed: January 19, 2021
    Publication date: July 29, 2021
    Inventors: Akiyoshi YAMAZAKI, Daisuke KAWANA, Yoshitaka KOMURO, Masatoshi ARAI, Nobuhiro MICHIBAYASHI, Takatoshi INARI
  • Patent number: 10941253
    Abstract: A block copolymer including a first block and a second block, the first block consisting of a polymer (P1) having a repeating structure of a structural unit (u1) containing in a side chain thereof a hyperbranched structure containing a silicon atom.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: March 9, 2021
    Assignees: Tokyo Ohka Kogyo Co., Ltd., Tokyo Institute of Technology
    Inventors: Teruaki Hayakawa, Seina Yamazaki, Rin Odashima, Takehiro Seshimo, Daisuke Kawana, Akiyoshi Yamazaki
  • Publication number: 20200262960
    Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure of a structural unit (u21) represented by general formula (u2-1) shown below, and the volume ratio of the first block, based on all blocks constituting the block copolymer being 42 to 44 vol %: In which RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 is a group derived from a compound represented by formula SHRt1, wherein Rt1 represents a hydrocarbon group having 1 to 5 carbon atoms optionally having a substituent.
    Type: Application
    Filed: February 3, 2020
    Publication date: August 20, 2020
    Inventors: Teruaki HAYAKAWA, Seina YAMAZAKI, Akiyoshi YAMAZAKI, Daisuke KAWANA, Yoshitaka KOMURO, Takaya MAEHASHI, Rin ODASHIMA
  • Publication number: 20190270852
    Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure represented by general formula (u2-1), and a block (b22) consisting of a polymer having a repeating structure of a structural unit (u22) containing a silicon atom, and the block (b22) is positioned between the first block and the block (b21) (wherein RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 represents an organic group having a polar group).
    Type: Application
    Filed: February 26, 2019
    Publication date: September 5, 2019
    Inventors: Akiyoshi YAMAZAKI, Daisuke KAWANA, Takehiro SESHIMO, Teruaki HAYAKAWA, Lei DONG, Rin ODASHIMA
  • Publication number: 20180244856
    Abstract: A block copolymer including a first block and a second block, the first block consisting of a polymer (P1) having a repeating structure of a structural unit (u1) containing in a side chain thereof a hyperbranched structure containing a silicon atom.
    Type: Application
    Filed: February 13, 2018
    Publication date: August 30, 2018
    Inventors: Teruaki HAYAKAWA, Seina YAMAZAKI, Rin ODASHIMA, Takehiro SESHIMO, Daisuke KAWANA, Akiyoshi YAMAZAKI
  • Patent number: 7741008
    Abstract: Disclosed is a positive resist composition comprising a resin component (A) and an acid generator component (B), wherein the component (A) contains a polymer compound (A1) containing a structural unit (a0) represented by formula (a0) shown below and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group: (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; Y1 represents an aliphatic cyclic group; Z represents an acid dissociable, dissolution inhibiting group containing a tertiary alkyl group; a represents an integer from 1 to 3, b represents an integer from 0 to 2, and a+b=1 to 3; and c, d and e each represents, independently, an integer from 0 to 3).
    Type: Grant
    Filed: October 17, 2006
    Date of Patent: June 22, 2010
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Sanae Furuya, Hideo Hada, Yusuke Nakagawa, Akiyoshi Yamazaki
  • Publication number: 20090311625
    Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
    Type: Application
    Filed: August 25, 2009
    Publication date: December 17, 2009
    Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazufumi Sato
  • Patent number: 7629105
    Abstract: A positive resist composition that includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer (A1) containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, in which a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) have been protected with the acid dissociable, dissolution inhibiting groups; and either the acid generator component (B) includes a diazomethane-based acid generator and an onium salt-based acid generator; or the composition further contains a compound, which contains at least one acid dissociable, dissolution inhibiting group, and generates an organic carboxylic acid under the action of acid g
    Type: Grant
    Filed: September 17, 2004
    Date of Patent: December 8, 2009
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Akiyoshi Yamazaki, Kazuo Tani, Naoto Motoike, Satoshi Maemori, Sachiko Yoshizawa
  • Publication number: 20090142696
    Abstract: Disclosed is a positive resist composition comprising a resin component (A) and an acid generator component (B), wherein the component (A) contains a polymer compound (A1) containing a structural unit (a0) represented by formula (a0) shown below and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group: (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; Y1 represents an aliphatic cyclic group; Z represents an acid dissociable, dissolution inhibiting group containing a tertiary alkyl group; a represents an integer from 1 to 3, b represents an integer from 0 to 2, and a+b=1 to 3; and c, d and e each represents, independently, an integer from 0 to 3).
    Type: Application
    Filed: October 17, 2006
    Publication date: June 4, 2009
    Applicant: Tokyo Ohika Kogyo Co., Ltd.
    Inventors: Sanae Furuya, Hideo Hada, Yusuke Nakagawa, Akiyoshi Yamazaki
  • Publication number: 20080227027
    Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
    Type: Application
    Filed: April 16, 2008
    Publication date: September 18, 2008
    Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazufumi Sato
  • Publication number: 20070141514
    Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
    Type: Application
    Filed: February 8, 2007
    Publication date: June 21, 2007
    Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazfumi Sato
  • Publication number: 20060210916
    Abstract: A positive resist composition that includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer (A1) containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, in which a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) have been protected with the acid dissociable, dissolution inhibiting groups; and either the acid generator component (B) includes a diazomethane-based acid generator and an onium salt-based acid generator; or the composition further contains a compound, which contains at least one acid dissociable, dissolution inhibiting group, and generates an organic carboxylic acid under the action of acid g
    Type: Application
    Filed: September 17, 2004
    Publication date: September 21, 2006
    Inventors: Akiyoshi Yamazaki, Kazuo Tani, Naoto Motoike, Satoshi Maemori, Sachiko Yoshizawa
  • Publication number: 20050266346
    Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
    Type: Application
    Filed: August 4, 2005
    Publication date: December 1, 2005
    Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazufumi Sato
  • Publication number: 20040248033
    Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
    Type: Application
    Filed: June 2, 2004
    Publication date: December 9, 2004
    Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazufumi Sato
  • Publication number: 20030129534
    Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
    Type: Application
    Filed: December 3, 2002
    Publication date: July 10, 2003
    Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazufumi Sato
  • Patent number: RE38254
    Abstract: Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a chemical compound which generates an acid when exposed to radiations, and (C) an organic carboxylic acid compound and (D) an amine, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (Mw/Mn) of 1.
    Type: Grant
    Filed: September 20, 2001
    Date of Patent: September 16, 2003
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Kazufumi Sato, Kazuyuki Nitta, Akiyoshi Yamazaki, Yoshika Banba, Toshimasa Nakayama