Patents by Inventor Alan Cohen

Alan Cohen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080208859
    Abstract: An enterprise database system generates organizational and consolidation organizational charts for an entity. Organizational charts are generated by accepting one or more ownership thresholds, including: voting percentage, equity ownership, and the number of board members under entity control. The system also accepts inclusion thresholds used to determine which entities will be selected from a database. The database is evaluated based on the ownership thresholds and inclusion thresholds to identify one or more organizational entities that satisfy the given thresholds. An entity is selected and the voting interests for the parent entities of that entity are evaluated. One parent entity is identified as the primary parent entity. The system presents the primary parent entity in the organizational chart. Any additional parent entities are listed alphabetically separate from the primary parent entity.
    Type: Application
    Filed: October 29, 2007
    Publication date: August 28, 2008
    Applicant: Credit Suisse Securities (USA) LLC
    Inventors: Bret Alan Cohen, Tomer Lanis, Deborah Jane Slaughter, Joseph M. Valazquez
  • Publication number: 20080200715
    Abstract: A process for the ammoxidation of a saturated or unsaturated or mixture of saturated and unsaturated hydrocarbon to produce an unsaturated nitrile, said process comprising contacting the saturated or unsaturated or mixture of saturated and unsaturated hydrocarbon with ammonia and an oxygen-containing gas in the presence of a catalyst composition comprising molybdenum, vanadium, antimony, niobium, tellurium, optionally at least one element select from the group consisting of titanium, tin, germanium, zirconium, hafnium, and optionally at least one lanthanide selected from the group consisting of lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium. Such catalyst compositions are effective for the gas-phase conversion of propane to acrylonitrile and isobutane to methacrylonitrile (via ammoxidation).
    Type: Application
    Filed: February 16, 2007
    Publication date: August 21, 2008
    Inventors: Claus G. Lugmair, Steven Alan Cohen
  • Publication number: 20080200709
    Abstract: A process is disclosed for the preparation of zinc alkyl chain growth products via a catalysed chain growth reaction of an alpha-olefin on a zinc alkyl, wherein the chain growth catalyst system employs a group 3-10 transition metal, or a group 3 main group metal, or a lanthanide or actinide complex, and optionally a suitable activator. The products can be further converted into alpha-olefins by olefin displacement of the grown alkyls as alpha-olefins from the zinc alkyl chain growth product, or into primary alcohols, by oxidation of the resulting zinc alkyl chain growth product to form alkoxide compounds, followed by hydrolysis of the alkoxides.
    Type: Application
    Filed: June 28, 2006
    Publication date: August 21, 2008
    Inventors: George Johan Peter Britovsek, Steven Alan Cohen, Vernon Charles Gibson
  • Publication number: 20080200716
    Abstract: A process for the ammoxidation of a saturated or unsaturated or mixture of saturated and unsaturated hydrocarbon to produce an unsaturated nitrile, said process comprising contacting the saturated or unsaturated or mixture of saturated and unsaturated hydrocarbon with ammonia and an oxygen-containing gas in the presence of a catalyst composition comprising molybdenum, vanadium, antimony, niobium, tellurium, optionally at least one element select from the group consisting of titanium, tin, germanium, zirconium, hafnium, and optionally at least one lanthanide selected from the group consisting of lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium. Such catalysts are characterized by very low levels of tellurium in the composition. Such catalyst compositions are effective for the gas-phase conversion of propane to acrylonitrile and isobutane to methacrylonitrile (via ammoxidation).
    Type: Application
    Filed: January 29, 2008
    Publication date: August 21, 2008
    Inventors: Claus G. Lugmair, Steven Alan Cohen, Gerry W. Zajac, Alakananda Bhattacharyya, Bhagya Chandra Sutradhar, James F. Brazdil
  • Publication number: 20080106863
    Abstract: An improvement for an assembly for use in a computing device which includes a microprocessor and a motherboard and a socket for receiving and making electric contact with the microprocessor. A heat sink is included which is in thermal contact with the microprocessor whereby a water barrier is applied to and proximate the socket for preventing water of condensation from contacting areas covered by the water barrier and a moisture absorbent surrounding the heat sink.
    Type: Application
    Filed: November 29, 2007
    Publication date: May 8, 2008
    Inventor: Alan Cohen
  • Publication number: 20080101012
    Abstract: Computing devices, including laptop computers, desk top computers, servers and video game terminals employ microprocessors which generate considerable heat. In fact, the heat generated from microprocessors is generally considered the limiting factor in computing speed. A heat sink is provided in thermal contact with a microprocessor whereby a water barrier is applied to and proximate a socket configured within the computing device's motherboard for preventing water of condensation from contacting areas covered by the water barrier.
    Type: Application
    Filed: January 15, 2008
    Publication date: May 1, 2008
    Inventor: Alan Cohen
  • Patent number: 7172968
    Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.
    Type: Grant
    Filed: July 3, 2002
    Date of Patent: February 6, 2007
    Assignee: International Business Machines Corporation
    Inventors: Stephan Alan Cohen, Fenton Read McFeely, Cevdet Ismail Noyan, Kenneth Parker Rodbell, Robert Rosenberg, John Jacob Yurkas
  • Patent number: 7087686
    Abstract: A process is disclosed for the preparation of zinc alkyl chain growth products via a catalysed chain growth reaction of an alpha-olefin on a zinc alkyl, wherein the chain growth catalyst system employs a group 3-10 transition metal, or a group 3 main group metal, or a lanthanide or actinide complex, and optionally a suitable activator. The products can be further converted into alpha-olefins by olefin displacement of the grown alkyls as alpha-olefins from the zinc alkyl chain growth product, or into primary alcohols, by oxidation of the resulting zinc alkyl chain growth product to form alkoxide compounds, followed by hydrolysis of the alkoxides.
    Type: Grant
    Filed: August 6, 2001
    Date of Patent: August 8, 2006
    Assignee: BP Chemicals Limited
    Inventors: George Johan Peter Britovsek, Steven Alan Cohen, Vernon Charles Gibson
  • Publication number: 20060152903
    Abstract: Computing devices, including laptop computers, desk top computers, servers and video game terminals employ microprocessors which generate considerable heat. In fact, the heat generated from microprocessors is generally considered the limiting factor in computing speed. A heat sink is provided in thermal contact with a microprocessor whereby a water barrier is applied to and proximate a socket configured within the computing device's motherboard for preventing water of condensation from contacting areas covered by the water barrier.
    Type: Application
    Filed: January 10, 2005
    Publication date: July 13, 2006
    Inventor: Alan Cohen
  • Patent number: 7067188
    Abstract: Disclosed is a polymeric article having a frosted and/or surface textured finish made from a polymeric resin comprised of a polymeric matrix and polymeric particles which are substantially spherical, highly crosslinked, have a mean particle size of between 15 and 70 micrometers and have a particle size distribution between 10-110 micrometers.
    Type: Grant
    Filed: January 10, 2000
    Date of Patent: June 27, 2006
    Assignee: Arkema
    Inventors: Shi-Jun Yang, Fabio Giberti, Ralph Howard Clark, Leslie Alan Cohen
  • Patent number: 6925165
    Abstract: A call selection process in a call center is configured to utilize a continuum of skill levels, in one or more categories, for a given multi-skill agent. In an illustrative embodiment, categories of levels are associated with skills supported by the given agent, with each of the categories including a level, e.g., a numerical value, for each of the skills. The levels are used in a call selection computation that determines which of a number of waiting calls should be delivered to the agent. The categories may include, for example, a speed category including levels indicative of the speed at which the agent can process calls for each of the corresponding skills, a yield category including levels indicative of results likely to be obtainable by the agent for each of the corresponding skills, and a preference category including levels indicative of preferences of the agent for calls requiring each of the corresponding skills.
    Type: Grant
    Filed: December 23, 1998
    Date of Patent: August 2, 2005
    Assignee: Avaya Technology Corp.
    Inventors: Richard Alan Cohen, Robin H. Foster
  • Patent number: 6784485
    Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.
    Type: Grant
    Filed: February 11, 2000
    Date of Patent: August 31, 2004
    Assignee: International Business Machines Corporation
    Inventors: Stephan Alan Cohen, Timothy Joseph Dalton, John Anthony Fitzsimmons, Stephen McConnell Gates, Lynne M. Gignac, Paul Charles Jamison, Kang-Wook Lee, Sampath Purushothaman, Darryl D. Restaino, Eva Simonyi, Horatio Seymour Wildman
  • Patent number: 6759321
    Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.
    Type: Grant
    Filed: July 25, 2002
    Date of Patent: July 6, 2004
    Assignee: International Business Machines Corporation
    Inventors: Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger
  • Patent number: 6730618
    Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.
    Type: Grant
    Filed: May 1, 2002
    Date of Patent: May 4, 2004
    Assignee: International Business Machines Corporation
    Inventors: Stephan Alan Cohen, Claudius Feger, Jeffrey Curtis Hedrick, Jane Margaret Shaw
  • Publication number: 20040077140
    Abstract: A uniformly thick oxide film on a substrate is formed by using an anodization apparatus which deposits a blanket precursor film on a surface of a substrate; provides electrical contact to the precursor film; moves the precursor film into contact with an electrolyte solution such that substantially all electrically conductive surfaces, e.g., pin contacts, the substrate edge and a backside of the substrate are electrically isolated from the electrolyte; ensures that the surface of the precursor film on the substrate is in direct contact with the electrolyte solution; and which applies an anodizing current and/or voltage between the precursor film and a counter electrode so as to compensate for a voltage drop resulting from the presence of the electrolyte.
    Type: Application
    Filed: October 16, 2002
    Publication date: April 22, 2004
    Inventors: Panayotis C. Andricacos, Roy Arthur Carruthers, Stephan Alan Cohen, John Michael Cotte, Lynne M. Gignac, Kenneth Jay Stein, Keith T. Kwietniak, Seshadri Subbanna, Horatio Seymour Wildman, David Earle Seeger, Andrew Herbert Simon
  • Publication number: 20040051178
    Abstract: A metal plus low dielectric constant (low-k) interconnect structure is provided for a semiconductor device wherein adjacent regions in a surface separated by a dielectric have dimensions in width and spacing in the sub 250 nanometer range, and in which reduced lateral leakage current between adjacent metal lines, and a lower effective dielectric constant than a conventional structure, is achieved by the positioning of a differentiating or mask member that is applied for the protection of the dielectric in subsequent processing operations, at a position about 2-5 nanometers below a, to be planarized, surface where there will be a lower electric field.
    Type: Application
    Filed: September 12, 2003
    Publication date: March 18, 2004
    Applicant: International Business Machines Corporation
    Inventors: Stephen Alan Cohen, Timothy Joseph Dalton, John Anthony Fitzsimmons, Stephen McConnell Gates, Brian Wayne Herbst, Sampath Purushothaman, Stanley Joseph Whitehair
  • Patent number: 6700971
    Abstract: An arrangement (100) for monitoring contact-center (104-108) performance automates the monitoring process by using a database schema (250-270) that records (200-224) the contact center to be monitored, its skills, the locations where the skills are located (in the case of a distributed contact center), the objective or target value for a given skill attribute (such as average speed of answer, maximum delay, etc.), the acceptable deviation from the objective (tolerance), the maximum acceptable deviation between locations (in the case of a distributed contact center), the periodicity or frequency of the monitoring, and the comparison operator needed to determine how a given observed or actual value for the skill attribute is to be compared with its specified objective and tolerance. Monitoring is then effected (300-366) as follows.
    Type: Grant
    Filed: November 27, 2000
    Date of Patent: March 2, 2004
    Assignee: Avaya Technology Corp.
    Inventors: Richard Alan Cohen, William Edward Gourlay, Marcus Knotts, Gokul Chander Prabhakar
  • Patent number: 6657305
    Abstract: A metal plus low dielectric constant (low-k) interconnect structure is provided for a semiconductor device wherein adjacent regions in a surface separated by a dielectric have dimensions in width and spacing in the sub 250 nanometer range, and in which reduced lateral leakage current between adjacent metal lines, and a lower effective dielectric constant than a conventional structure, is achieved by the positioning of a differentiating or mask member that is applied for the protection of the dielectric in subsequent processing operations, at a position about 2-5 nanometers below a, to be planarized, surface where there will be a lower electric field.
    Type: Grant
    Filed: November 1, 2000
    Date of Patent: December 2, 2003
    Assignee: International Business Machines Corporation
    Inventors: Stephen Alan Cohen, Timothy Joseph Dalton, John Anthony Fitzsimmons, Stephen McConnell Gates, Brian Wayne Herbst, Sampath Purushothaman, Stanley Joseph Whitehair
  • Patent number: 6633640
    Abstract: A multi-site call processing system includes multiple distributed call center sites, and utilizes a load balancing process to distribute calls among the sites for handling by agents. The system generates a multi-site performance score characterizing the performance of the load balancing process. Adjustments may be made in the load balancing process, such as selection of one type of load balancing over another for use at a particular time, based at least in part on the multi-site performance score. The multi-site performance score may be determined using single-site performance measures such as Average Speed of Answer (ASA) and agent occupancy generated across multiple time intervals. The multi-site performance score as generated for a given interval may be, e.g., a ratio of the maximum and minimum values of a single-site performance measure for that interval.
    Type: Grant
    Filed: February 1, 2000
    Date of Patent: October 14, 2003
    Assignee: Avaya Technology Corp.
    Inventors: Richard Alan Cohen, Andrew Derek Flockhart, Robin H. Foster, Mila Maximets
  • Patent number: 6577011
    Abstract: The present invention includes a multilevel air-gap-containing interconnect wiring structure including: a collection of interspersed line levels and via levels, the via levels and line levels containing conductive via and line features embedded in a dielectric having an air-gap and solid dielectric. The air-gap and solid dielectric includes (i) one or more solid dielectrics only in the shadows of the conductive features in overlying levels and (ii) a gaseous dielectric elsewhere in the structure. The collection of line levels and via levels are topped by a laminated thin, taut insulating cover layer having openings to selected conductive features in the topmost underlying line or via layer, and the openings are filled with conductive material connecting to terminal pad contacts on the insulating cover layer.
    Type: Grant
    Filed: November 17, 2000
    Date of Patent: June 10, 2003
    Assignee: International Business Machines Corporation
    Inventors: Leena P. Buchwalter, Alessandro Cesare Callegari, Stephan Alan Cohen, Teresita Ordonez Graham, John P. Hummel, Christopher V. Jahnes, Sampath Purushothaman, Katherine Lynn Saenger, Jane Margaret Shaw