Patents by Inventor Alan Cohen

Alan Cohen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6559046
    Abstract: An insulator for covering an interconnection wiring level in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Also provided is electrical insulation between neighboring devices using the flowable oxide which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.
    Type: Grant
    Filed: June 26, 1997
    Date of Patent: May 6, 2003
    Assignee: International Business Machines Corporation
    Inventors: Stephan Alan Cohen, Vincent James McGahay, Ronald Robert Uttecht
  • Publication number: 20030078458
    Abstract: A process is disclosed for the preparation of zinc alkyl chain growth products via a catalyzed chain growth reaction of an alpha-olefin on a zinc alkyl, wherein the chain growth catalyst system employs a group 3-10 transition metal, or a group 3 main group metal, or a lanthanide or actinide complex, and optionally a suitable activator. The products can be further converted into alpha-olefins by olefin displacement of the grown alkyls as alpha-olefins from the zinc alkyl chain growth product, or into primary alcohols, by oxidation of the resulting zinc alkyl chain growth product to form alkoxide compounds, followed by hydrolysis of the alkoxides.
    Type: Application
    Filed: August 6, 2001
    Publication date: April 24, 2003
    Inventors: George Johan Peter Britovsek, Steven Alan Cohen, Vernon Charles Gibson
  • Publication number: 20020196594
    Abstract: An over voltage spike or surge protection principle is provided that involves an element that is positioned between a node in the circuitry and a reference voltage that performs as an insulator as voltage across the element increases and at a selectable voltage, the current at any higher voltage such as during a spike or a surge is shunted to reference or ground, the element is not damaged by the breakdown type of the effect of the shunting of the current, and then, after the duration of the high voltage excursion the element returns to the performance before the selectable voltage. The principle of the invention permits in-situ or locallized over voltage protection to selected nodes throughout circuitry as well as throughout an integrated circuit including the interface with external circuitry.
    Type: Application
    Filed: June 21, 2001
    Publication date: December 26, 2002
    Inventors: Stephan Alan Cohen, John Anthony Fitzsimmons, Stephen McConnell Gates, Alfred Grill
  • Publication number: 20020185741
    Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.
    Type: Application
    Filed: July 25, 2002
    Publication date: December 12, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Katherina Babich, Alessandro Calleqari, Stephen Alan Cohen, Alfred Grill, Christophr Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger
  • Publication number: 20020175418
    Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.
    Type: Application
    Filed: July 3, 2002
    Publication date: November 28, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephan Alan Cohen, Fenton Read McFeely, Cevdet Ismail Noyan, Kenneth Parker Rodbell, Robert Rosenberg, John Jacob Yurkas
  • Publication number: 20020125549
    Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.
    Type: Application
    Filed: May 1, 2002
    Publication date: September 12, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephan Alan Cohen, Claudius Feger, Jeffrey Curtis Hedrick, Jane Margaret Shaw
  • Patent number: 6448655
    Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.
    Type: Grant
    Filed: April 28, 1998
    Date of Patent: September 10, 2002
    Assignee: International Business Machines Corporation
    Inventors: Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger
  • Patent number: 6414377
    Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.
    Type: Grant
    Filed: August 10, 1999
    Date of Patent: July 2, 2002
    Assignee: International Business Machines Corporation
    Inventors: Stephan Alan Cohen, Claudius Feger, Jeffrey Curtis Hedrick, Jane Margaret Shaw
  • Publication number: 20020033534
    Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.
    Type: Application
    Filed: August 10, 1999
    Publication date: March 21, 2002
    Inventors: STEPHAN ALAN COHEN, CLAUDIUS FEGER, JEFFREY CURTIS HEDRICK, JANE MARGARET SHAW
  • Publication number: 20020033535
    Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.
    Type: Application
    Filed: April 28, 1998
    Publication date: March 21, 2002
    Inventors: KATHERINA BABICH, ALESSANDRO CALLEGARI, STEPHEN ALAN COHEN, ALFRED GRILL, CHRISTOPHER VINCENT JAHNES, VISHNUBHAI VITTHALBHAI PATEL, SAMPATH PURUSHOTHAMAN, KATHERINE LYNN SAENGER
  • Patent number: 6184121
    Abstract: A method to achieve a very low effective dielectric constant in high performance back end of the line chip interconnect wiring and the resulting multilayer structure are disclosed. The process involves fabricating the multilayer interconnect wiring structure by methods and materials currently known in the state of the art of semiconductor processing; removing the intralevel dielectric between the adjacent metal features by a suitable etching process; applying a thin passivation coating over the exposed etched structure; annealing the etched structure to remove plasma damage; laminating an insulating cover layer to the top surface of the passivated metal features; optionally depositing an insulating environmental barrier layer on top of the cover layer; etching vias in the environmental barrier layer, cover layer and the thin passivation layer for terminal pad contacts; and completing the device by fabricating terminal input/output pads.
    Type: Grant
    Filed: July 9, 1998
    Date of Patent: February 6, 2001
    Assignee: International Business Machines Corporation
    Inventors: Leena P. Buchwalter, Alessandro Cesare Callegari, Stephan Alan Cohen, Teresita Ordonez Graham, John P. Hummel, Christopher V. Jahnes, Sampath Purushothaman, Katherine Lynn Saenger, Jane Margaret Shaw
  • Patent number: 6014310
    Abstract: A composite dielectric material useful in advanced memory applications such as dynamic random access memory (DRAM) cells is provided. The composite dielectric material of the present invention includes a mixed oxide such as TiO.sub.2 or Ta.sub.2 O.sub.5 that is interdiffused into a Si.sub.3 N.sub.4 film. Capacitors including the composite dielectric material of the present invention are also disclosed.
    Type: Grant
    Filed: October 21, 1998
    Date of Patent: January 11, 2000
    Assignee: International Business Machines Corporation
    Inventors: Gary Bela Bronner, Stephan Alan Cohen, David Mark Dobuzinsky, Jeffrey Peter Gambino, Herbert Lei Ho, Karen Popek Madden
  • Patent number: 5876788
    Abstract: A method of fabricating a dielectric material useful in advanced memory applications which comprises a metal oxide such as TiO.sub.2 or Ta.sub.2 O.sub.5 interdiffused into a Si.sub.3 N.sub.4 film is provided.
    Type: Grant
    Filed: January 16, 1997
    Date of Patent: March 2, 1999
    Assignee: International Business Machines Corporation
    Inventors: Gary Bela Bronner, Stephan Alan Cohen, David Mark Dobuzinsky, Jeffrey Peter Gambino, Herbert Lei Ho, Karen Popek Madden
  • Patent number: 5679269
    Abstract: The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.
    Type: Grant
    Filed: April 12, 1996
    Date of Patent: October 21, 1997
    Assignee: International Business Machines, Corp.
    Inventors: Stephan Alan Cohen, Daniel Charles Edelstein, Alfred Grill, Jurij Rostyslav Paraszczak, Vishnubhai Vitthalbhai Patel
  • Patent number: 5674355
    Abstract: The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: October 7, 1997
    Assignee: International Business Machines Corp.
    Inventors: Stephan Alan Cohen, Daniel Charles Edelstein, Alfred Grill, Jurij Rostyslav Paraszczak, Vishnubhai Vitthalbhai Patel
  • Patent number: 5098088
    Abstract: An exercise machine is particularly adapted for use by handicapped persons or other physically limited persons. The exercise machine includes a plurality of exercise mechanisms operable from a single station so that the handicapped person does not have to move between different stations. The plurality of exercise mechanisms are operatively connected to a single brake mechanism to that each exercise mechanism can be independently manipulated. One of the exercise mechanisms includes an overhead bar assembly which is operable as a bench press or as an overhead press.
    Type: Grant
    Filed: October 9, 1990
    Date of Patent: March 24, 1992
    Inventors: Alan Cohen, Robert C. Williams, III