Abstract: Methods and systems for reducing SWaP in combinations of laser diode drivers (LDDs) and diode laser pump modules (DPMs) are disclosed.

Abstract: A cooling device includes a thermally conductive object having an opening configured to receive an optical component, the opening being configured such that the optical component is thermally and optically operationally connected to the thermally conductive and electrically conductive object. One or more cooling components, microchannel coolers in one instance, are also thermally operationally connected to the thermally conductive and electrically conductive object. Methods of use are disclosed.

Abstract: Systems and methods that accept the emitted radiant power from such a combined diode laser structure (laser bar stack) and efficiently direct essentially all of it into the pump cladding of a double-clad fiber amplifier, such that the radiant power will then be absorbed by a rare-earth doped core in the active fiber.

Abstract: A method and apparatus transferring high radiant power from a plurality of laser diodes into a single optical fiber with high efficiency, small size, and reduced weight.

Abstract: Systems and methods for providing a low stress electrode connection capable of carrying a high electrical current to an edge-emitting device, such as a laser diode are described. Systems and methods for providing mechanisms to allow precise adjustment of the relative position of one heat-sink for an optical edge emitting device relative to an adjacent heat-sink in a stack of heat-sinks are also provided herein.

Abstract: A method of attaching a semiconductor component to a heat-sink where the component is first placed onto a heat-sink substrate whose attachment surface comprises a malleable-metal film, a semiconductor component is placed onto the malleable-metal film, and pressure and heat is applied for a predetermined time to the stack including substrate with malleable-metal film and semiconductor component.

Abstract: The method of these teachings includes processing a semiconductor structure forming an active waveguide of a semiconductor laser in an environment free of contamination in order to provide contamination free mirror facets at the ends of the active waveguide, and depositing a single crystal passivation layer comprised of a semiconductor whose bandgap exceeds that of the active layer and the waveguide layers and that does not form misfit dislocations with the laser diode semiconductor, the deposition occurring at a temperature at which the semiconductor structure does not degrade.

Abstract: The present disclosure relates to a patterned surface composite structure. The structure includes a first material having a specific coefficient-of-thermal-expansion and a second material having a different coefficient-of-thermal-expansion. The first material can be patterned with specific features and the second material may be located between those features, thereby forming areas having a coefficient-of-thermal-expansion between that of the first and second materials. A thermally emissive device, such as a laser diode, may be attached to a surface of the patterned composite structure.

Abstract: In one embodiment, a process for manufacturing an optical fiber coupler of the invention utilizes a rotating drum that has a sloted portion or stacking slot for receiving multiple lengths of fiber in a stack. A support for the input ends of the fibers is in the form of a block which is secured to the surface of the drum in spaced relation with the slot. The block has a plurality of shallow, parallel spaced apart grooves in parallel alignment with the stacking slot. An end of the fiber is initially threaded preferably into the stacking slot and then sequentially located alternately in vacant grooves in the support. As the drum is rotated, a positioner operates to move the fiber transversely in the direction parallel to the drum axis so as to align the fiber in each respective one of the grooves and the slot for each rotation of the drum. The process continues until all the grooves are all occupied and the stacking slot is filled with a corresponding number of fiber lengths.

Abstract: There is disclosed a method and apparatus for easily mounting, holding and facilitating the coating of preselected areas of very thin semiconductor samples. The apparatus includes a base adapted for placement in a coating chamber. The base includes a pair of spaced apart supporting arms onto which a plurality of stacked samples can be loaded. A cover is then slidably positioned over the stacked samples to hold the stacked samples in position during coating. The cover in conjunction with the supporting arms define an open sided cavity to enable the samples to be coated. The apparatus also can be used to hold only one sample.

Abstract: Disclosed is a device including a surface coating for passivation or anti-reflection, and a method of manufacture. The coating comprises ZrO.sub.2 doped with yttrium, magnesium or calcium. The doped ZrO.sub.2 is preferably deposited on the device surface by electron-beam evaporation from a single crystal source of ZrO.sub.2 and Y.sub.2 O.sub.3, MgO or CaO.

Abstract: A method for providing a dual layer diffusion mask or encapsulation coating for use with III-V compound semiconductors, the dual layer coating comprising an inner layer of silicon which closely matches the coefficient of thermal expansion of the III-V compound semiconductor and an outer layer of silicon nitride which is relatively impermeable to subsequent metallization and for thereafter applying metallized contacts to the III-V compound semiconductor through selectively etched openings in the diffusion mask or encapsulation coating.

Abstract: Proposed is a method of fabricating III-V and II-VI compound semiconductors and a resulting product where there is formed on the surface a coating which can function as a diffusion mask and/or a passivation layer. The coating is a silicon layer deposited by a method which does not damage the semiconductor surface.

Abstract: The invention is a process for putting down coatings of aluminum oxide on optical surfaces using electron-beam deposition in an oxygen-enriched atmosphere. Particularly good results are obtained when oxygen is flowed over or directed at the surface to be coated. Such coatings have extremely low losses compared to many conventional optical coatings and are particularly useful for anti-reflection coatings on various devices. In particular, for optical devices with indium phosphide surfaces operating at wavelengths near 1.3 .mu.m, the optical properties of aluminum oxide coatings are near optimum for anti-reflection coatings and the thermal expansion characteristics are a close match to those of indium phosphide.

Abstract: Presented is a dual wavelength structure wherein two edge-emitting devices are bonded with p-regions adjacent. The bonding medium is a conductive compound that forms a common electrode between the devices. Each device is separately addressable. Efficient coupling of emitted light into a single fiber is accomplished by restricting the vertical and horizontal separation of the light emitting stripes.

Abstract: Electrical contacts with low specific-contact resistance to In-based Group III-V compound semiconductors (e.g., p-InGaAsP) are formed by electron beam depositing a thin Pt layer directly on the semiconductor and sintering at about 450.degree.-525.degree. C. for about 5-30 minutes. Light emitting diodes without dark spot defects can be fabricated using this technique.

Abstract: Disclosed is an indium-containing semiconductor device which includes an ohmic contact formed by application of successive layers of Au-Sn-Cr-Au. The combination of Sn and Cr layers provides an effective barrier to the diffusion of indium to the surface of the contact so that bonding to the contact is not impeded.

Abstract: Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc). By performing this type of diffusion into a low-doped n.sup.- -type body (12) with a carrier concentration (VII) below that of the concave segment, a p.sup.+ --p.sup.- junction (15) is formed at the depth of the concave segment and a p.sup.- --n.sup.- junction (17) is formed at a greater depth. The zone (16) between the junctions is at least partially depleted and forms the active region of a p.sup.+ --p.sup.- --n.sup.- photodiode. Specifically described are InP:Cd photodiodes.

Abstract: A light emitting diode designed to emit primarily at 1.3 microns comprises a crystal having a plurality of lattice matched layers including an n-type indium phosphide front surface layer, an n-type indium phosphide buffer layer, a p-type indium gallium arsenide phosphide active layer, a p-type indium phosphide confining layer and an indium gallium arsenide back surface layer, and an annular front contact and a limited area back contact to the crystal.

Abstract: Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc). By performing this type of diffusion into a low-doped n.sup.- -type body (12) with a carrier concentration (VII) below that of the concave segment, a p.sup.+ -p.sup.- junction (15) is formed at the depth of the concave segment and a p.sup.- -n.sup.- junction (17) is formed at a greater depth. The zone (16) between the junctions is at least partially depleted and forms the active region of a p.sup.+ -p.sup.- -n.sup.- photodiode. Specifically described are InP:Cd photodiodes.