Abstract: A resist composition for use in the fabrication of integrated circuits, the use of a resist composition, and a lithographic method utilizing a resist composition, wherein the resist composition includes an alkyltin-oxo cage having a counterion selected from tetrakis(pentafluorophenyl) borate, tetrakis[3,5-bis(trifluoromethyl)phenyl]borate, tetrakis[3,5-bis(tert-butyl)phenyl]borate, or tetrakis[(3,5-bis(1,1,1,3,3,3-hexafluoro-2-methoxypropan-2-yl)phenyl)phenyl]borate. A lithographic method including: providing a resist composition including an alkyltin-oxo cage having a counterion selected from the above borate groups; exposing the resist composition to a patterned radiation beam or an electron beam to form a pattern in the resist composition; and developing the exposed resist composition to form a circuit pattern.