Abstract: An array structure of single-level poly NMOS EEPROM memory cells and method of operating the array is discussed implemented in a higher density embedded EEPROM layout that eliminates the use of high voltage transistors from the array core region. If they are utilized, the high voltage transistors are moved to row and column drivers in the periphery region to increase array density with little or no added process complexity to allow economic implementation of larger embedded SLP EEPROM arrays. During program or erase operations of the array, the method provides a programming voltage for the selected memory cells of the array, and a half-write (e.g., mid-level) voltage to the remaining unselected memory cells to avoid disturbing the unselected memory cells of the array.

Abstract: The present invention provides an interconnect for use in an integrated circuit, a method for manufacturing the interconnect, and a method for manufacturing an integrated circuit including the interconnect. The interconnect (100), among other elements, includes a surface conductive lead (160) located in an opening formed within a protective overcoat (110), and a barrier layer (140) located between the protective overcoat (110) and the surface conductive lead (160), a portion of the barrier layer (140) forming a skirt (145) that extends outside a footprint of the surface conductive lead (160).

Abstract: An EEPROM memory cell uses PMOS type floating gate transistor formed in a n-well, where the floating gate is routed over a p? diffused region formed in the n-well to form a control capacitor. The PMOS floating gate transistor uses a p-type diffused region below the p+ active region forming the drain to provide a higher breakdown voltage. Cell programming can be performed through hot-electron injection, with the electric field across the control capacitor to aid injection into the floating gate. FN erasure is achieved by taking the potential of the n-well to the programming voltage while holding the potential of the control capacitor at a low voltage.

Abstract: The present invention relates to integrated circuits comprising a protective overcoat and thick copper connectors. According to one aspect of the inventions, vias in the protective overcoat are substantially filled with tungsten plugs, or plugs of another metal with a relatively low coefficient of thermal expansion. According to another aspect of the invention, large vias in the protective overcoat are replaced with arrays of smaller vias. The invention reduces the likelihood of device failures during temperature cycling tests. Also, the invention allows for smaller vias in the protective overcoat and removal of interconnect functions to the thick copper layer.

Abstract: An integrated circuit drain extension transistor for sub micron CMOS processes. A transistor gate (40) is formed over a CMOS n-well region (80) and a CMOS p-well region (70) in a silicon substrate (10). Transistor source regions (50),(140) and drain regions (55),(145) are formed in the various CMOS well regions to form drain extension transistors where the CMOS well regions (70),(80) serve as the drain extension regions of the transistors.

Abstract: A method and system of measuring layout efficiency is disclosed wherein after the initial layout (A), and the layout is drawn (B) a layout verification step C includes identifying seed devices or layers and the devices or layers are grown according to design rules and process rules to determine the minimum area required for the design. The layout verification is performed for both device packing density and interconnect packing density and the efficiency is calculated based on the total available area and reported.(D).

Abstract: An intergrated circuit drain extension transistor for sub micron CMOS processes. A transistor gate (40) is formed over a CMOS n-well region (80) and a CMOS p-well region (70) in a silicon substrate (10). Transistor source regions (50), (140) and drain regions (55), (145) are formed in the various CMOS well regions to form drain extension transistors where the CMOS well regions (70), (80) serve as the drain extension regions of the transistor.

Abstract: A method and system of measuring layout efficiency is disclosed wherein after the initial layout (A), and the layout is drawn (B) a layout verification step C includes identifying seed devices or layers and the devices or layers are grown according to design rules and process rules to determine the minimum area required for the design. The layout verification is performed for both device packing density and interconnect packing density and the efficiency is calculated based on the total available area and reported.(D).