Abstract: Methods and apparatus for a signal isolator that mitigates the effects of CMTI strikes. In embodiments, a first die comprises a transmit module and the first die has a first voltage domain; and a second die comprises a receive module including a receive amplifier configured to receive from the transmit module a transmit signal that includes a differential signal and a common mode current. The second die may have a second voltage domain with the first and second die being separated by an isolation barrier. In embodiment, the receive amplifier includes a differential amplifier to receive the differential input signal from the transmit module; and a common mode module configured to sense the common mode current and sink or source the common mode current and minimize changes to an input impedance of the receive amplifier.

Abstract: Methods and apparatus for a signal isolator having reduced parasitics. An example embodiment, a signal isolator and include a first metal region electrically connected to a first die portion, a second die portion isolated from the first die portion, and a second metal region electrically connected to the second die portion. A third metal region can be electrically isolated from the first and second metal regions and a third die portion can be electrically isolated from the first, second and third metal regions. In embodiments, the first metal region, the second metal region, and the third metal region provide a first isolated signal path from the first die portion to the second die portion.

Abstract: A data storage circuit for storing data from volatile memory in response to a power loss, the data storage circuit including an input for receiving a power loss signal in response to a power loss from at least one power source, an input configured to receive data from a volatile memory, a single block of non-volatile matrix of memory cells and a driver circuit coupled to said single row of non-volatile matrix of memory cells. The driver circuit is configured to write data to and read data from said single block of non-volatile matrix of memory cells. The single block of non-volatile matrix of memory cells can be provided as a single row electrically erasable programmable read only memory (EEPROM).

Abstract: Methods and apparatus for a signal isolator having reduced parasitics. An example embodiment, a signal isolator and include a first metal region electrically connected to a first die portion, a second die portion isolated from the first die portion, and a second metal region electrically connected to the second die portion. A third metal region can be electrically isolated from the first and second metal regions and a third die portion can be electrically isolated from the first, second and third metal regions. In embodiments, the first metal region, the second metal region, and the third metal region provide a first isolated signal path from the first die portion to the second die portion.

Abstract: Methods and apparatus for a signal isolator having reduced parasitics. An example embodiment, a signal isolator and include a first metal region electrically connected to a first die portion, a second die portion isolated from the first die portion, and a second metal region electrically connected to the second die portion. A third metal region can be electrically isolated from the first and second metal regions and a third die portion can be electrically isolated from the first, second and third metal regions. In embodiments, the first metal region, the second metal region, and the third metal region provide a first isolated signal path from the first die portion to the second die portion.

Abstract: Apparatus includes a first portion of conductive material having varying response to a generated magnetic field along a length of the conductive material, wherein the first portion of conductive material produces a varying eddy current and a varying reflected magnetic field, in response to the generated magnetic field. The apparatus further includes one or more reference portions of conductive material having a relatively invariable response to the generated magnetic field, wherein the reference portion of conductive material produces a relatively invariable eddy current and a relatively invariable reflected magnetic field in response to the generated magnetic field.

Abstract: A tracking ADC with adaptive slew rate boosting can dynamically adjust one or more of its operational parameters in response to detecting a slew rate limit condition. In some embodiments, slew rate boosting can include increasing the value of a digital error signal in response to detection of a slew rate limit condition. In other embodiments, slew rate boosting can include increasing a clock frequency of the tracking ADC in response to detection of a slew rate limit condition.

Abstract: A data storage circuit for storing data from volatile memory in response to a power loss, the data storage circuit including an input for receiving a power loss signal in response to a power loss from at least one power source, an input configured to receive data from a volatile memory, a single block of non-volatile matrix of memory cells and a driver circuit coupled to said single row of non-volatile matrix of memory cells. The driver circuit is configured to write data to and read data from said single block of non-volatile matrix of memory cells. The single block of non-volatile matrix of memory cells can be provided as a single row electrically erasable programmable read only memory (EEPROM).

Abstract: Methods and apparatus for a signal isolator IC package including a die having a first die portion isolated from a second die portion. The first die portion is surrounded on six sides by first insulative material and the second die portion is surrounded on six sides by second insulative material. The first die portion provides a first voltage domain and the second die portion provides a second voltage domain. The signal isolator comprises a first signal path between the first die portion and the second die portion, wherein the first signal path is isolated with respect to the first and second die portions.

Abstract: A data storage circuit for storing data from volatile memory in response to a power loss, the data storage circuit including an input for receiving a power loss signal in response to a power loss from at least one power source, an input configured to receive data from a volatile memory, a single block of non-volatile matrix of memory cells and a driver circuit coupled to said single row of non-volatile matrix of memory cells. The driver circuit is configured to write data to and read data from said single block of non-volatile matrix of memory cells. The single block of non-volatile matrix of memory cells can be provided as a single row electrically erasable programmable read only memory (EEPROM).

Abstract: Methods and apparatus for a signal isolator having reduced parasitics. An example embodiment, a signal isolator and include a first metal region electrically connected to a first die portion, a second die portion isolated from the first die portion, and a second metal region electrically connected to the second die portion. A third metal region can be electrically isolated from the first and second metal regions and a third die portion can be electrically isolated from the first, second and third metal regions. In embodiments, the first metal region, the second metal region, and the third metal region provide a first isolated signal path from the first die portion to the second die portion.

Abstract: Apparatus includes a first portion of conductive material having varying response to a generated magnetic field along a length of the conductive material, wherein the first portion of conductive material produces a varying eddy current and a varying reflected magnetic field, in response to the generated magnetic field. The apparatus further includes one or more reference portions of conductive material having a relatively invariable response to the generated magnetic field, wherein the reference portion of conductive material produces a relatively invariable eddy current and a relatively invariable reflected magnetic field in response to the generated magnetic field.

Abstract: Electronic circuits used in magnetic field sensors use transistors for passing a current through the transistors and also through a magnetoresistance element.

Abstract: An apparatus comprises a conductive material having varying thickness along its length, the varying thickness providing varying response along a length of the conductive material to a magnetic field having a non-zero frequency; wherein the magnetic field produces an eddy current in the conductive material which generates a reflected magnetic field, wherein the varying response causes the reflected magnetic field to vary in strength along the length of the conductive material. The apparatus may include one or more reference portions of conductive material.

Abstract: Hall effect elements are driven by current generators that use vertical epi resistors disposed away from an edge of a substrate upon which, within which, or over which, the Hall effect elements, the current generators, and the vertical epi resistors are disposed.

Abstract: A data storage circuit for storing data from volatile memory in response to a power loss, the data storage circuit including an input for receiving a power loss signal in response to a power loss from at least one power source, an input configured to receive data from a volatile memory, a single block of non-volatile matrix of memory cells and a driver circuit coupled to said single row of non-volatile matrix of memory cells. The driver circuit is configured to write data to and read data from said single block of non-volatile matrix of memory cells. The single block of non-volatile matrix of memory cells can be provided as a single row electrically erasable programmable read only memory (EEPROM).

Abstract: A data storage circuit for storing data from volatile memory in response to a power loss, the data storage circuit including an input for receiving a power loss signal in response to a power loss from at least one power source, an input configured to receive data from a volatile memory, a single block of non-volatile matrix of memory cells and a driver circuit coupled to said single row of non-volatile matrix of memory cells. The driver circuit is configured to write data to and read data from said single block of non-volatile matrix of memory cells. The single block of non-volatile matrix of memory cells can be provided as a single row electrically erasable programmable read only memory (EEPROM).

Abstract: A data storage circuit for storing data from volatile memory in response to a power loss, the data storage circuit including an input for receiving a power loss signal in response to a power loss from at least one power source, an input configured to receive data from a volatile memory, a single block of non-volatile matrix of memory cells and a driver circuit coupled to said single row of non-volatile matrix of memory cells. The driver circuit is configured to write data to and read data from said single block of non-volatile matrix of memory cells. The single block of non-volatile matrix of memory cells can be provided as a single row electrically erasable programmable read only memory (EEPROM).

Abstract: Hall effect elements are driven by current generators that use vertical epi resistors disposed away from an edge of a substrate upon which, within which, or over which, the Hall effect elements, the current generators, and the vertical epi resistors are disposed.

Abstract: An apparatus comprises a conductive material having varying thickness along its length, the varying thickness providing varying response along a length of the conductive material to a magnetic field having a non-zero frequency; wherein the magnetic field produces an eddy current in the conductive material which generates a reflected magnetic field, wherein the varying response causes the reflected magnetic field to vary in strength along the length of the conductive material. The apparatus may include one or more reference portions of conductive material.