Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, an electronic package comprises a core. In an embodiment, the core comprises glass. In an embodiment, a blind via is provided into the core. In an embodiment, a plate spans across the blind via.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a core, where the core comprises glass. In an embodiment, a buildup layer is over the core. In an embodiment, a patch antenna with a first patch is under the core, and a second patch is over a surface of the core opposite from the first patch. In an embodiment, the electronic package further comprises a via through the core and coupled to the patch antenna.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a substrate, where the substrate comprises glass. In an embodiment, a via opening is formed through a thickness of the substrate, and a first layer is over sidewalls of the via opening. In an embodiment, the first layer comprises a magnetic material. In an embodiment, a second layer is over the first layer, where the second layer is an insulator. In an embodiment, a third layer fills the via opening, where the third layer is a conductor.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a substrate, where the substrate comprises glass. In an embodiment, a via opening is formed through the substrate, where the via opening has an hourglass shaped profile. In an embodiment, a magnetic layer fills the via opening, and a via is through the magnetic layer. In an embodiment, sidewalls of the via are substantially vertical.

Abstract: Embodiments may relate to a radio frequency (RF) multi-chip module that includes a first RF die and a second RF die. The first and second RF dies may be coupled with a package substrate at an inactive side of the respective dies. A bridge may be coupled with an active side of the first and second RF dies die such that the first and second RF dies are communicatively coupled through the bridge, and such that the first and second RF dies are at least partially between the package substrate and the bridge. Other embodiments may be described or claimed.

Abstract: Embodiments disclosed herein include an electronic package that comprises a substrate with a first surface and a second surface opposite from the first surface. In an embodiment, the substrate comprises glass. In an embodiment, the electronic package further comprises an opening through the substrate from the first surface to the second surface, where the opening comprises a first end proximate to the first surface of the substrate, a second end proximate to the second surface of the substrate, and a middle region between the first end and the second end. In an embodiment, the middle region has a discontinuous slope at junctions with the first end and the second end.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a substrate with a first surface and a second surface opposite from the first surface, where the substrate comprises glass. In an embodiment, the electronic package further comprises a trace embedded in the substrate, where a width of the trace is less than a height of the trace. In an embodiment, the electronic package further comprises a first layer on the first surface of the substrate, where the first layer is a dielectric buildup film, and a second layer on the second surface of the substrate, where the second layer is the dielectric buildup film.

Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to electrically coupled trench capacitors within a substrate. The substrate may be part of an interposer, such as a glass interposer, where the trench capacitors deliver a high capacitance density close to one or more dies that are attached to a surface of the substrate. Portions of the trench capacitor may be a thin film capacitor at a surface of the substrate. The trenches extend from a first side of the substrate toward a second side of the substrate opposite the first side. Other embodiments may be described and/or claimed.

Abstract: Methods, systems, apparatus, and articles of manufacture are disclosed for integrated circuit package substrates with high aspect ratio through glass vias. An example microelectronic package including a glass substrate including a via, the via including a high aspect ratio. The example microelectronic package further including a seed layer extending substantially evenly along an inner wall of the via.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a core with a first surface and a second surface, where the core comprises glass. In an embodiment, a first buildup layer is over the first surface of the core, and a second buildup layer is under the second surface of the core. In an embodiment, the electronic package further comprises a via through the core between the first surface of the core and the second surface of the core, and a plane into the first surface of the core, where a width of the plane is greater than a width of the via.

Abstract: Embedded batteries within glass cores are disclosed. Example apparatus include a glass core layer having opposing first and second surfaces, the glass core layer including a cavity extending from the first surface toward the second surface, and a battery including a first conductive material positioned in the cavity, a second conductive material positioned in the cavity, and an electrolyte to separate the first conductive material from the second conductive material.

Abstract: Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). For example, in some embodiments, an IC package support may include: a first conductive structure in a dielectric material; a second conductive structure in the dielectric material; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a polymer, and the material is different from the dielectric material. The material may act as a dielectric material below a trigger voltage, and as a conductive material above the trigger voltage.

Abstract: An lithographic reticle may be formed comprising a transparent substrate, a substantially opaque mask formed on the transparent substrate that defines at least one exposure window, wherein the at least one exposure window has a first end, a first filter formed on the transparent substrate within the at least one exposure window and abutting the first end thereof, and a second filter formed on the transparent substrate within the at least one exposure window and abutting the first filter, wherein an average transmissivity of the first filter is substantially one half of a transmissivity of the second filter. In another embodiment, the at least one exposure window includes a third filter abutting the second end and is adjacent the second filter. Further embodiments of the present description include interconnection structures and systems fabricated using the lithographic reticle.

Abstract: Embodiments of the invention include a microelectronic device that includes a first substrate having radio frequency (RF) components and a second substrate that is coupled to the first substrate. The second substrate includes a first conductive layer of an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher. A mold material is disposed on the first and second substrates. The mold material includes a first region that is positioned between the first conductive layer and a second conductive layer of the antenna unit with the mold material being a dielectric material to capacitively couple the first and second conductive layers of the antenna unit.

Abstract: An apparatus is provided which comprises: a plurality of first conductive contacts having a first pitch spacing on a substrate surface, a plurality of second conductive contacts having a second pitch spacing on the substrate surface, and a plurality of conductive interconnects disposed within the substrate to couple a first grouping of the plurality of second conductive contacts associated with a first die site with a first grouping of the plurality of second conductive contacts associated with a second die site and to couple a second grouping of the plurality of second conductive contacts associated with the first die site with a second grouping of the plurality of second conductive contacts associated with the second die site, wherein the conductive interconnects to couple the first groupings are present in a layer of the substrate above the conductive interconnects to couple the second groupings. Other embodiments are also disclosed and claimed.

Abstract: Embodiments may relate to a microelectronic package or a die thereof which includes a die, logic, or subsystem coupled with a face of the substrate. An inductor may be positioned in the substrate. Electromagnetic interference (EMI) shield elements may be positioned within the substrate and surrounding the inductor. Other embodiments may be described or claimed.

Abstract: Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). In some embodiments, an IC package support may include: a first conductive structure; a second conductive structure; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a positive temperature coefficient material.

Abstract: Disclosed herein are methods to fabricate inorganic dies with organic interconnect layers and related structures and devices. In some embodiments, an integrated circuit (IC) structure may be formed to include an inorganic die and one or more organic interconnect layers on the inorganic die, wherein the organic interconnect layers include an organic dielectric. An example method includes forming organic interconnect layers over an inorganic interconnect substrate and forming passive components in the organic interconnect layer. The organic interconnect layers comprise a plurality of conductive metal layers through an organic dielectric material. The plurality of conductive metal layers comprises electrical pathways. the passive components are electrically coupled to the electrical pathways.

Abstract: Technologies for high throughput additive manufacturing (HTAM) structures are disclosed. In one embodiment, a sacrificial dielectric is formed to provide a negative mask on which to pattern a conductive trace using HTAM. In another embodiment, a permanent dielectric is patterned using a processing such as laser project patterning. A conductive trace can then be patterned using HTAM. In yet another embodiment, conductive traces with tapered sidewalls can be patterned, and then a buffer layer and HTAM layer can be deposited on top.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, where the package substrate comprises: a core substrate. In an embodiment, the core substrate comprises glass. In an embodiment, a via passes through the core substrate. In an embodiment, a die is coupled to the package substrate, where the die comprises an IO interface. In an embodiment, the IO interface is electrically coupled to the via and the via is within a footprint of the die.