Patents by Inventor Aleksandr Shabalov

Aleksandr Shabalov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8158941
    Abstract: The present invention provides a novel way of operating sensing elements or bolometers in the resistive hysteresis region of a phase-transitioning VO2 (or doped VO2) films. The invention is based on a novel principle that minor hysteresis loops inside the major loop become single-valued or non-hysteretic for sufficiently small temperature excursions. This single valued R(T) branches being characterized by essentially the same temperature coefficient of resistivity (TCR) as the semiconducting phase at room temperature. These non-hysteretic branches (NHB) can be located close to the metallic-phase end of the major loop, thus providing for tunable resistivity orders of magnitude lower than that of a pure semiconducting phase. Operating the Focal Plan Array in one of these NHBs allows for having high TCR and low resistivity simultaneously.
    Type: Grant
    Filed: October 8, 2010
    Date of Patent: April 17, 2012
    Assignee: Research Foundation of State University of New York
    Inventors: Michael A. Gurvitch, Serge Luryi, Aleksandr Y. Polyakov, Aleksandr Shabalov
  • Publication number: 20110248167
    Abstract: The present invention provides a novel way of operating sensing elements or bolometers in the resistive hysteresis region of a phase-transitioning VO2 (or doped VO2) films. The invention is based on a novel principle that minor hysteresis loops inside the major loop become single-valued or non-hysteretic for sufficiently small temperature excursions. This single valued R(T) branches being characterized by essentially the same temperature coefficient of resistivity (TCR) as the semiconducting phase at room temperature. These non-hysteretic branches (NHB) can be located close to the metallic-phase end of the major loop, thus providing for tunable resistivity orders of magnitude lower than that of a pure semiconducting phase. Operating the Focal Plan Array in one of these NHBs allows for having high TCR and low resistivity simultaneously.
    Type: Application
    Filed: October 8, 2010
    Publication date: October 13, 2011
    Inventors: Michael A. Gurvitch, Serge Luryi, Aleksandr Y. Polyakov, Aleksandr Shabalov