Patents by Inventor Alex Salnik
Alex Salnik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10533954Abstract: Disclosed are methods and apparatus for detecting defects or reviewing defects in a semiconductor sample. The system has a brightfield (BF) module for directing a BF illumination beam onto a sample and detecting an output beam reflected from the sample in response to the BF illumination beam. The system has a modulated optical reflectance (MOR) module for directing a pump and probe beam to the sample and detecting a MOR output beam from the probe spot in response to the pump beam and the probe beam. The system includes a processor for analyzing the BF output beam from a plurality of BF spots to detect defects on a surface or near the surface of the sample and analyzing the MOR output beam from a plurality of probe spots to detect defects that are below the surface of the sample.Type: GrantFiled: August 31, 2017Date of Patent: January 14, 2020Assignee: KLA-Tencor CorporationInventors: Lena Nicolaides, Mohan Mahadevan, Alex Salnik, Scott A. Young
-
Publication number: 20180003648Abstract: Disclosed are methods and apparatus for detecting defects or reviewing defects in a semiconductor sample. The system has a brightfield (BF) module for directing a BF illumination beam onto a sample and detecting an output beam reflected from the sample in response to the BF illumination beam. The system has a modulated optical reflectance (MOR) module for directing a pump and probe beam to the sample and detecting a MOR output beam from the probe spot in response to the pump beam and the probe beam. The system includes a processor for analyzing the BF output beam from a plurality of BF spots to detect defects on a surface or near the surface of the sample and analyzing the MOR output beam from a plurality of probe spots to detect defects that are below the surface of the sample.Type: ApplicationFiled: August 31, 2017Publication date: January 4, 2018Applicant: KLA-Tencor CorporationInventors: Lena Nicolaides, Mohan Mahadevan, Alex Salnik, Scott A. Young
-
Patent number: 9772297Abstract: Disclosed are methods and apparatus for detecting defects or reviewing defects in a semiconductor sample. The system has a brightfield (BF) module for directing a BF illumination beam onto a sample and detecting an output beam reflected from the sample in response to the BF illumination beam. The system has a modulated optical reflectance (MOR) module for directing a pump and probe beam to the sample and detecting a MOR output beam from the probe spot in response to the pump beam and the probe beam. The system includes a processor for analyzing the BF output beam from a plurality of BF spots to detect defects on a surface or near the surface of the sample and analyzing the MOR output beam from a plurality of probe spots to detect defects that are below the surface of the sample.Type: GrantFiled: February 10, 2015Date of Patent: September 26, 2017Assignee: KLA-Tencor CorporationInventors: Lena Nicolaides, Mohan Mahadevan, Alex Salnik, Scott A. Young
-
Patent number: 9232622Abstract: A laser-sustained plasma illuminator system includes at least one laser light source to provide light. At least one reflector focuses the light from the laser light source at a focal point of the reflector. An enclosure substantially filled with a gas is positioned at or near the focal point of the reflector. The light from the laser light source at least partially sustains a plasma contained in the enclosure. The enclosure has at least one wall with at least one property that is varied to compensate for optical aberrations in the system.Type: GrantFiled: September 3, 2014Date of Patent: January 5, 2016Assignee: KLA-Tencor CorporationInventors: Ilya Bezel, Anatoly Shchemelinin, Alex Salnik, Anant Chimmalgi
-
Publication number: 20150226676Abstract: Disclosed are methods and apparatus for detecting defects or reviewing defects in a semiconductor sample. The system has a brightfield (BF) module for directing a BF illumination beam onto a sample and detecting an output beam reflected from the sample in response to the BF illumination beam. The system has a modulated optical reflectance (MOR) module for directing a pump and probe beam to the sample and detecting a MOR output beam from the probe spot in response to the pump beam and the probe beam. The system includes a processor for analyzing the BF output beam from a plurality of BF spots to detect defects on a surface or near the surface of the sample and analyzing the MOR output beam from a plurality of probe spots to detect defects that are below the surface of the sample.Type: ApplicationFiled: February 10, 2015Publication date: August 13, 2015Applicant: KLA-Tencor CorporationInventors: Lena Nicolaides, Mohan Mahadevan, Alex Salnik, Scott A. Young
-
Patent number: 8962351Abstract: The present invention may include a first dopant metrology system configured to measure a first plurality of values of at least one parameter of a wafer, an ion implanter configured to implant a plurality of ions into the wafer, a second dopant metrology system configured to measure a second plurality of values of at least one parameter of the wafer following ion implantation of the wafer by the implanter, wherein the first dopant metrology system and the second dopant metrology system are communicatively coupled, an annealer configured to anneal the wafer following ion implantation, and a third dopant metrology system configured to measure a third plurality of values of at least one parameter of the wafer following annealing of the wafer by the annealer, wherein the second dopant metrology system and the third dopant metrology system are communicatively coupled.Type: GrantFiled: September 9, 2013Date of Patent: February 24, 2015Assignee: KLA-Tencor CorporationInventors: Alex Salnik, Bin-Ming Benjamin Tsai, Lena Nicolaides
-
Publication number: 20140367592Abstract: A laser-sustained plasma illuminator system includes at least one laser light source to provide light. At least one reflector focuses the light from the laser light source at a focal point of the reflector. An enclosure substantially filled with a gas is positioned at or near the focal point of the reflector. The light from the laser light source at least partially sustains a plasma contained in the enclosure. The enclosure has at least one wall with at least one property that is varied to compensate for optical aberrations in the system.Type: ApplicationFiled: September 3, 2014Publication date: December 18, 2014Inventors: Ilya Bezel, Anatoly Shchemelinin, Alex Salnik, Anant Chimmalgi
-
Patent number: 8853655Abstract: A laser-sustained plasma illuminator system includes at least one laser light source to provide light. At least one reflector focuses the light from the laser light source at a focal point of the reflector. An enclosure substantially filled with a gas is positioned at or near the focal point of the reflector. The light from the laser light source at least partially sustains a plasma contained in the enclosure. The enclosure has at least one wall with a thickness that is varied to compensate for optical aberrations in the system.Type: GrantFiled: February 18, 2014Date of Patent: October 7, 2014Assignee: KLA-Tencor CorporationInventors: Ilya Bezel, Anatoly Shchemelinin, Alex Salnik, Anant Chimmalgi
-
Publication number: 20140239202Abstract: A laser-sustained plasma illuminator system includes at least one laser light source to provide light. At least one reflector focuses the light from the laser light source at a focal point of the reflector. An enclosure substantially filled with a gas is positioned at or near the focal point of the reflector. The light from the laser light source at least partially sustains a plasma contained in the enclosure. The enclosure has at least one wall with a thickness that is varied to compensate for optical aberrations in the system.Type: ApplicationFiled: February 18, 2014Publication date: August 28, 2014Inventors: Ilya Bezel, Anatoly Shchemelinin, Alex Salnik, Anant Chimmalgi
-
Patent number: 8817260Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.Type: GrantFiled: November 11, 2009Date of Patent: August 26, 2014Assignee: KLA-Tencor CorporationInventors: Jon Opsal, Lena Nicolaides, Alex Salnik, Allan Rosencwaig
-
Patent number: 8535957Abstract: The present invention may include a first dopant metrology system configured to measure a first plurality of values of at least one parameter of a wafer, an ion implanter configured to implant a plurality of ions into the wafer, a second dopant metrology system configured to measure a second plurality of values of at least one parameter of the wafer following ion implantation of the wafer by the implanter, wherein the first dopant metrology system and the second dopant metrology system are communicatively coupled, an annealer configured to anneal the wafer following ion implantation, and a third dopant metrology system configured to measure a third plurality of values of at least one parameter of the wafer following annealing of the wafer by the annealer, wherein the second dopant metrology system and the third dopant metrology system are communicatively coupled.Type: GrantFiled: March 31, 2011Date of Patent: September 17, 2013Assignee: KLA-Tencor CorporationInventors: Alex Salnik, Bin-Ming Benjamin Tsai, Lena Nicolaides
-
Patent number: 8436554Abstract: An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.Type: GrantFiled: April 7, 2011Date of Patent: May 7, 2013Assignee: KLA-Tencor CorporationInventors: Guoheng Zhao, Ady Levy, Alex Salnik, Mehdi Vaez-Iravani, Lena Nicolaides, Samuel S. H. Ngai
-
Patent number: 8415961Abstract: A method may include illuminating a first area of a semiconductor utilizing a light source. The method may also include measuring at least one characteristic of electrical energy transmission utilizing a probe for placing at least one of at or near the illuminated first area of the semiconductor. The method may further include varying the measured at least one characteristic of the electrical energy transmission generated by the light from the light source incident upon the semiconductor while maintaining an intensity of the light source. Further, the method may include determining a sheet resistance for the junction of the semiconductor utilizing the varied at least one characteristic of the electrical energy transmission.Type: GrantFiled: December 7, 2010Date of Patent: April 9, 2013Assignee: KLA-Tencor CorporationInventors: Guoheng Zhao, Alex Salnik, Lena Nicolaides, Ady Levy
-
Publication number: 20120256559Abstract: An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.Type: ApplicationFiled: April 7, 2011Publication date: October 11, 2012Applicant: KLA-Tencor CorporationInventors: Guoheng Zhao, Ady Levy, Alex Salnik, Mehdi Vaez-Iravani, Lena Nicolaides, Samuel S.H. Ngai
-
Patent number: 8120776Abstract: Carrier activation and end-of-range defect density of ultra-shallow junctions in integrated circuits are determined using modulated optical reflectance signals, DC reflectances of pump or probe laser beams, and in-phase and quadrature signal processing. A method for determining characteristics of an ultra-shallow junction includes periodically exciting a region of the substrate using a pump laser beam, and reflecting a probe laser beam from the excited region. A modulated optical reflectance signal is measured along with DC reflectance of the probe laser beam. The modulated optical reflectance signal and DC reflectance are compared with reference signals generated from calibration substrates to determine carrier activation and end-of-range defect density in the junction.Type: GrantFiled: August 20, 2009Date of Patent: February 21, 2012Assignee: KLA-Tencor CorporationInventors: Alex Salnik, Lena Nicolaides
-
Patent number: 7982867Abstract: Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.Type: GrantFiled: April 26, 2010Date of Patent: July 19, 2011Assignee: KLA-Tencor CorporationInventors: Alex Salnik, Jon Opsal, Lena Nicolaides
-
Publication number: 20100315625Abstract: Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.Type: ApplicationFiled: April 26, 2010Publication date: December 16, 2010Applicant: KLA-TENCOR CORPORATIONInventors: Alex SALNIK, Jon Opsal, Lena Nicolaides
-
Publication number: 20100134785Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.Type: ApplicationFiled: November 11, 2009Publication date: June 3, 2010Applicant: KLA-Tencor Corp.Inventors: Jon Opsal, Lena Nicolaides, Alex Salnik, Allan Rosencwaig
-
Patent number: 7705977Abstract: Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.Type: GrantFiled: November 28, 2007Date of Patent: April 27, 2010Assignee: KLA-Tencor CorporationInventors: Alex Salnik, Jon Opsal, Lena Nicolaides
-
Patent number: 7646486Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.Type: GrantFiled: January 30, 2008Date of Patent: January 12, 2010Assignee: KLA-Tencor CorporationInventors: Jon Opsal, Lena Nicolaides, Alex Salnik, Allan Rosencwaig