Abstract: A method for cleaning parts employed during the processing of semiconductor wafers includes a first cleaning step for removing super-micron particles and a second cleaning step for removing sub-micron particles. The second step utilizes frozen carbon dioxide pellets and removes contaminant particles have a size of less than one micron. The cleaning method consistently removes substantially all sub-micron particles from a work surface.

Abstract: Elevated metal contact bumps are provided on a microelectronic semiconductor circuit, with the use of aluminum-palladium metallization as a base for selective electroless plating. The aluminum and palladium are preferably deposited sequentially in a single operation, i.e., without exposing the aluminum surface to the atmosphere. The aluminum-palladium film is then patterned in a single step, using an etchant which attacks both metals at substantially the same rate. The metal pattern is then covered with an insulation layer wherein apertures are opened to expose palladium at selected sites for immersion in an electroless plating bath of ionic Cu or Ni for bump formation.