Abstract: The present invention relates to a method for producing a conductor structural element, comprising providing a rigid substrate, electrodepositing a copper coating on the rigid substrate, applying a conductor pattern structure to the copper coating, then possibly mounting components, laminating the substrate with at least one electrically insulating layer, detaching the rigid substrate, at least partially removing the remaining copper coating of the rigid substrate in such a way that the conductor pattern structure is exposed.

Abstract: In accordance with the aspects of the present disclosure, a method and apparatus is disclosed for three-dimensional imaging interferometric microscopy (IIM), which can use at least two wavelengths to image a three-dimensional object. The apparatus can include a first, a second, and a third optical system. The first optical system is disposed to provide a substantially coherent illumination to the 3D object, wherein the illumination is characterized by a plurality of wavelengths. The second optical system includes an optical image recording device and one or more additional optical components characterized by a numerical aperture NA. The third optical system provides interferometric reintroduction of a portion of the coherent illumination as a reference beam into the second optical system. An image recording device records each sub-image formed as a result of interference between the illumination that is scattered by the 3D object and the reference beam.

Abstract: An electronic sub-assembly (36) comprising at least one electronic component (14) embedded in a sequence of layers, wherein the electronic component (14) is arranged in a recess of an electrically conductive central layer (16) and directly adjoins a resin layer (12, 20) on each side.

Abstract: In accordance with the aspects of the present disclosure, a method and apparatus is disclosed for imaging interferometric microscopy (IIM), which can use an immersion medium to enhance resolution up to a resolution of linear systems resolution limit of ?/4n, where ? is the wavelength in free space and n is the index of refraction of a transmission medium.

Abstract: Electronic sub-assembly comprising a carrier layer and a mounting area with at least one electronic component, wherein the carrier layer has at least in portions a material with a low coefficient of thermal expansion to adjust the coefficient of thermal expansion of the carrier layer, and wherein at least one compensation layer is provided on the carrier layer adjacent to the installation area, on which compensation layer an electrically insulating, thermally conductive layer and at least one electrically conductive layer are provided.

Abstract: In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.

Abstract: A light-transmitting pane for displaying an image of a head-up display is provided. The light-transmitting pane includes a cholesteric liquid-crystal layer arrangement, which is arranged in the interior of the pane or is arranged on a surface of the pane. Depending on the polarization of the incident light, at least a portion of the light generated by an image generating device of a head-up display arrangement can be reflected on the cholesteric liquid-crystal layer arrangement such that the reflected light has a p-polarized fraction, which can be perceived through polarized sunglasses.

Abstract: In accordance with the invention, there are imaging interferometric microscopes and methods for imaging interferometric microscopy using structural illumination and evanescent coupling for the extension of imaging interferometric microscopy. Furthermore, there are coherent anti-Stokes Raman (CARS) microscopes and methods for coherent anti-Stokes Raman (CARS) microscopy, wherein imaging interferometric microscopy techniques are applied to get material dependent spectroscopic information.

Abstract: In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.

Abstract: In accordance with the aspects of the present disclosure, a method and apparatus is disclosed for imaging interferometric microscopy (IIM), which can use an immersion medium to enhance resolution up to a resolution of linear systems resolution limit of ?/4n, where ? is the wavelength in free space and n is the index of refraction of a transmission medium.

Abstract: The present invention relates to a method for producing a conductor structural element, comprising providing a rigid substrate, electrodepositing a copper coating on the rigid substrate, applying a conductor pattern structure to the copper coating, then possibly mounting components, laminating the substrate with at least one electrically insulating layer, detaching the rigid substrate, at least partially removing the remaining copper coating of the rigid substrate in such a way that the conductor pattern structure is exposed.

Abstract: Exemplary embodiments provide an image interferometric microscope (IIM) and methods for image interferometric microscopy. The disclosed IIM can approach the linear systems limits of optical resolution by using a plurality of off-axis illuminations to access high spatial frequencies along with interferometric reintroduction of a zero-order reference beam on the low-NA side of the optical system. In some embodiments, a thin object can be placed normal to the optical axis and the frequency space limit can be extended to about [(1+NA)n/?], where NA is the numerical-aperture of the objective lens used, n is the refraction index of the transmission medium and ? is an optical wavelength. In other embodiments, tilting the object plane can further allow collection of diffraction information up to the material transmission bandpass limited spatial frequency of about 2n/?.

Abstract: In accordance with the invention, there are imaging interferometric microscopes and methods for imaging interferometric microscopy using structural illumination and evanescent coupling for the extension of imaging interferometric microscopy. Furthermore, there are coherent anti-Stokes Raman (CARS) microscopes and methods for coherent anti-Stokes Raman (CARS) microscopy, wherein imaging interferometric microscopy techniques are applied to get material dependent spectroscopic information.

Abstract: In accordance with the invention, there are imaging interferometric microscopes and methods for imaging interferometric microscopy using structural illumination and evanescent coupling for the extension of imaging interferometric microscopy. Furthermore, there are coherent anti-Stokes Raman (CARS) microscopes and methods for coherent anti-Stokes Raman (CARS) microscopy, wherein imaging interferometric microscopy techniques are applied to get material dependent spectroscopic information.

Abstract: The method of operation applies to a self-powered home automation sensor device for detecting the existence of and/or for measuring the intensity of a first physical phenomenon, comprising a means of converting an effect of a second physical phenomenon into electrical energy and a means of determining the instantaneous power of this second physical phenomenon that can be converted into electrical energy, wherein a normal, first mode of operation of the device or an energy-saving second mode of operation of the device is activated according to a value defined on the basis of the determination of the instantaneous power that can be converted into electrical energy.

Abstract: A method is provided for making an electrical connection with a microelectronic component arranged on or embedded within a surface of a circuit board layer or a substrate. The microelectronic component has an electrical contact face that is accessible on a surface of the microelectronic component. An electrically conducting bump is applied to the electrical contact face of the microelectronic component. A metal foil or metal coat is applied via a coating of an insulating binder to the surface of the circuit board under an action of pressure and/or heat so that the electrically conducting bump penetrates the coating of the insulating binder to make the electrical connection between the metal foil or metal coat and the electrical contact face.

Abstract: In a method for producing an electronic subassembly, at least one electronic component is fixed in place on an insulating layer of a conductive foil in a first step, the conductive foil with the electronic component is laminated onto a circuit board substrate, and a circuit track structure is then developed by structuring the conductive foil. The expansion coefficient of the insulating layer lies between the expansion coefficient of the circuit board substrate and the expansion coefficient of the circuit track structure, and/or electronic components that require small passages for contacting with the circuit track structure are pressed deeper into the insulating layer than electronic components that require larger passages in the insulating layer.

Abstract: Exemplary embodiments provide an image interferometric microscope (IIM) and methods for image interferometric microscopy. The disclosed IIM can approach the linear systems limits of optical resolution by using a plurality of off-axis illuminations to access high spatial frequencies along with interferometric reintroduction of a zero-order reference beam on the low-NA side of the optical system. In some embodiments, a thin object can be placed normal to the optical axis and the frequency space limit can be extended to about [(1+NA)n/?], where NA is the numerical-aperture of the objective lens used, n is the refraction index of the transmission medium and ? is an optical wavelength. In other embodiments, tilting the object plane can further allow collection of diffraction information up to the material transmission bandpass limited spatial frequency of about 2n/?.

Abstract: Exemplary embodiments provide an image interferometric microscope (IIM) and methods for image interferometric microscopy. The disclosed IIM can approach the linear systems limits of optical resolution by using a plurality of off-axis illuminations to access high spatial frequencies along with interferometric reintroduction of a zero-order reference beam on the low-NA side of the optical system. In some embodiments, a thin object can be placed normal to the optical axis and the frequency space limit can be extended to about [(1+NA)n/?], where NA is the numerical-aperture of the objective lens used, n is the refraction index of the transmission medium and ? is an optical wavelength. In other embodiments, tilting the object plane can further allow collection of diffraction information up to the material transmission bandpass limited spatial frequency of about 2n/?.

Abstract: In a method for producing an electronic subassembly, at least one electronic component is fixed in place on an insulating layer of a conductive foil in a first step, the conductive foil with the electronic component is laminated onto a circuit board substrate, and a circuit track structure is then developed by structuring the conductive foil. The expansion coefficient of the insulating layer lies between the expansion coefficient of the circuit board substrate and the expansion coefficient of the circuit track structure, and/or electronic components that require small passages for contacting with the circuit track structure are pressed deeper into the insulating layer than electronic components that require larger passages in the insulating layer.