Patents by Inventor Alexander Perel

Alexander Perel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11127557
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: September 21, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20210287872
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Application
    Filed: March 12, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Patent number: 9076625
    Abstract: An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer.
    Type: Grant
    Filed: April 8, 2011
    Date of Patent: July 7, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Craig Chaney, Leo Klos, Anthony Renau, Alexander Perel
  • Publication number: 20120256097
    Abstract: An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer.
    Type: Application
    Filed: April 8, 2011
    Publication date: October 11, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Craig R. Chaney, Leo V. Klos, Anthony Renau, Alexander Perel
  • Patent number: 8142607
    Abstract: An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: March 27, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Costel Biloiu, Alexander Perel, Jay Scheuer
  • Patent number: 7999479
    Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
    Type: Grant
    Filed: April 16, 2009
    Date of Patent: August 16, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Costel Biloiu, Jay Scheuer, Alexander Perel
  • Publication number: 20100264328
    Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
    Type: Application
    Filed: April 16, 2009
    Publication date: October 21, 2010
    Inventors: Costel Biloiu, Jay Scheuer, Alexander Perel
  • Publication number: 20100055345
    Abstract: An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
    Type: Application
    Filed: August 28, 2008
    Publication date: March 4, 2010
    Inventors: Costel Biloiu, Alexander Perel, Jay Scheuer
  • Publication number: 20070295901
    Abstract: A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second
    Type: Application
    Filed: April 25, 2007
    Publication date: December 27, 2007
    Inventors: Peter Kellerman, Victor Benveniste, Alexander Perel, Brian Freer, Michael Graf
  • Publication number: 20070195482
    Abstract: An electrostatic chuck includes dielectric layer having at least one region, an electrode associated with the at least one region, and an AC power source configured to provide an AC voltage signal to the electrode. The dielectric property of the dielectric layer is configured to permit a charge migration about the dielectric layer to produce an electrostatic force to attract a workpiece to the dielectric layer when the AC voltage signal is applied to the electrode.
    Type: Application
    Filed: March 31, 2006
    Publication date: August 23, 2007
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Richard Muka, Alexander Perel, Paul Murphy
  • Publication number: 20070178678
    Abstract: Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.
    Type: Application
    Filed: January 28, 2006
    Publication date: August 2, 2007
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Christopher Hatem, Jonathan England, Larry Sneddon, Russell Low, Anthony Renau, Alexander Perel, Kourosh Saadatmand
  • Publication number: 20070145298
    Abstract: Angle of incidence measurements along an axis of ion implantation are obtained by employing positive and negative slot structures. The positive slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of an ion beam having a selected range of angles in a positive direction. The negative slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of the ion beam having the selected range of angles in a negative direction. A first beam measurement mechanism measures beam current of the positive portion to obtain a positive angle beam current measurement. A second beam measurement mechanism measures beam current of the negative portion to obtain a negative angle beam current measurement. An analyzer component employs the positive angle beam current measurement and the negative angle beam current measurement to determine a measured angle of incidence.
    Type: Application
    Filed: December 12, 2005
    Publication date: June 28, 2007
    Inventors: Brian Freer, Alexander Perel
  • Publication number: 20060169915
    Abstract: Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.
    Type: Application
    Filed: November 8, 2005
    Publication date: August 3, 2006
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph Olson, Anthony Renau, Donna Smatlak, Kurt Deckerlucke, Paul Murphy, Alexander Perel, Russell Low, Peter Kurunczi
  • Publication number: 20060071181
    Abstract: An ion beam implanter includes ion beam forming and directing apparatus and an implantation station where workpieces are implanted with ions from an ion beam. The beam travels along an evacuated path from an ion source to the implantation station. A flexible bellows couples the implantation station to the beam forming and directing apparatus permitting the implantation station to be pivoted with respect to the beam forming and directing apparatus and thereby change an implantation orientation of the workpieces with respect to the ion beam. A replaceable, flexible bellows liner is disposed within an interior region of the bellows to reduce the volume of implantation byproducts deposited on an interior surface of the bellows.
    Type: Application
    Filed: October 1, 2004
    Publication date: April 6, 2006
    Inventors: Lyudmila Stone, Scott Barusso, Dale Stone, Alexander Perel
  • Publication number: 20050205807
    Abstract: The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position.
    Type: Application
    Filed: March 18, 2004
    Publication date: September 22, 2005
    Inventors: Alexander Perel, Lyudmila Stone, William Loizides, Victor Benveniste