Patents by Inventor Alexander Syrkin
Alexander Syrkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230407519Abstract: The disclosure refers to a furnace apparatus, in particular a furnace apparatus for growing crystals, in particular for growing SiC crystals. The furnace apparatus includes a furnace unit, where the furnace unit includes a furnace housing, at least one crucible unit where the crucible unit is arranged inside the furnace housing, where the crucible unit includes a crucible housing, where the housing has an outer surface and an inner surface, where the inner surface at least partially defines a crucible volume, where a receiving space for receiving a source material is arranged or formed inside the crucible volume, where a seed holder unit for holding a defined seed wafer is arranged inside the crucible volume, and at least one heating unit for heating the source material, where the receiving space for receiving the source material is at least in parts arranged between the heating unit and the seed holder unit.Type: ApplicationFiled: November 19, 2021Publication date: December 21, 2023Inventors: Kagan Ceran, Didier Marsan, Alexander Syrkin, Omar Benamara, Moaine Jebara
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Patent number: 11322652Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.Type: GrantFiled: December 13, 2016Date of Patent: May 3, 2022Assignee: Ostendo Technologies, Inc.Inventors: Anna Volkova, Vladimir Ivantsov, Alexander Syrkin, Benjamin A. Haskell, Hussein S. El-Ghoroury
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Publication number: 20170170363Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.Type: ApplicationFiled: December 13, 2016Publication date: June 15, 2017Inventors: Anna Volkova, Vladimir Ivantsov, Alexander Syrkin, Benjamin A. Haskell, Hussein S. El-Ghoroury
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Patent number: 9577143Abstract: A backflow liner in an epitaxial growth system is provided in order to control gas flow and protect the surface of substrates throughout an epitaxial growth cycle. The backflow liner provides critical protection during the warming time prior to substrate pre-treatment, while the growth environment reaches steady state condition between the pre-treatment and the growth process, during pauses between the layer depositions in case of multilayer structure growth, and during the cooling process. The direction of the gas flow through the backflow liner is counter to the deposition gas flows directed from the source end of the growth system. The backflow liner is therefore designed to shape the flow of gases to prevent formation of the vortex-type streams in the growth system that may negatively affect the growth process.Type: GrantFiled: June 13, 2013Date of Patent: February 21, 2017Assignee: Ostendo Technologies, Inc.Inventors: Lisa Shapovalov, Oleg Kovalenkov, Vladimir Ivantsov, Alexander Syrkin
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Patent number: 9443727Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.Type: GrantFiled: August 13, 2014Date of Patent: September 13, 2016Assignee: Ostendo Technologies, Inc.Inventors: Vitali Soukhoveev, Vladimir Ivantsov, Benjamin A. Haskell, Hussein S. El-Ghoroury, Alexander Syrkin
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Patent number: 9023673Abstract: A method to grow single phase group III-nitride articles including films, templates, free-standing substrates, and bulk crystals grown in semi-polar and non-polar orientations is disclosed. One or more steps in the growth process includes the use of additional free hydrogen chloride to eliminate undesirable phases, reduce surface roughness, and increase crystalline quality. The invention is particularly well-suited to the production of single crystal (11.2) GaN articles that have particular use in visible light emitting devices.Type: GrantFiled: June 13, 2013Date of Patent: May 5, 2015Assignee: Ostendo Technologies, Inc.Inventors: Lisa Shapovalov, Oleg Kovalenkov, Vladimir Ivantsov, Vitali Soukhoveev, Alexander Syrkin, Alexander Usikov
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Patent number: 8992684Abstract: The geometry of transition from cylindrical to rectangular shape through the conical part in hydride vapor phase epitaxial (HVPE) systems for deposition of III-nitride films is disclosed. It is used to ensure the laminar gas flow inside the growth zone of the system. For the velocity of flow within the atmospheric pressure reactor to be sufficient, the precursors are injected through the narrow diameter tubing injectors. The quartz reactor geometry is introduced to control the transition from jet to laminar flow.Type: GrantFiled: June 14, 2013Date of Patent: March 31, 2015Assignee: Ostendo Technologies, Inc.Inventors: Oleg Kovalenkov, Vitali Soukhoveev, Alexander Syrkin, Vladimir Sizov
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Publication number: 20140353685Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.Type: ApplicationFiled: August 13, 2014Publication date: December 4, 2014Inventors: Vitali Soukhoveev, Vladimir Ivantsov, Benjamin A. Haskell, Hussein S. El-Ghoroury, Alexander Syrkin
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Patent number: 8728938Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.Type: GrantFiled: June 26, 2012Date of Patent: May 20, 2014Assignee: Ostendo Technologies, Inc.Inventors: Vladimir Ivantsov, Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury
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Patent number: 8673074Abstract: A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.Type: GrantFiled: July 15, 2009Date of Patent: March 18, 2014Assignee: Ostendo Technologies, Inc.Inventors: Alexander Usikov, Alexander Syrkin, Robert G. W. Brown, Hussein S. El-Ghoroury, Philippe Spiberg, Vladimir Ivantsov, Oleg Kovalenkov, Lisa Shapovalova
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Patent number: 8629065Abstract: A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.Type: GrantFiled: November 6, 2009Date of Patent: January 14, 2014Assignee: Ostendo Technologies, Inc.Inventors: Philippe Spiberg, Hussein S. El-Ghoroury, Alexander Usikov, Alexander Syrkin, Bernard Scanlan, Vitali Soukhoveev
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Publication number: 20130337639Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.Type: ApplicationFiled: June 26, 2012Publication date: December 19, 2013Applicant: OSTENDO TECHNOLOGIES, INC.Inventors: Vladimir Ivantsov, Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury
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Publication number: 20110108954Abstract: A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.Type: ApplicationFiled: November 6, 2009Publication date: May 12, 2011Applicant: OSTENDO TECHNOLOGIES, INC.Inventors: Philippe Spiberg, Hussein S. El-Ghoroury, Alexander Usikov, Alexander Syrkin, Bernard Scanlan, Vitali Soukhoveev
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Publication number: 20100012948Abstract: A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.Type: ApplicationFiled: July 15, 2009Publication date: January 21, 2010Applicant: OSTENDO TECHNOLOGIES, INC.Inventors: Alexander Usikov, Alexander Syrkin, Robert G.W. Brown, Hussein S. El-Ghoroury, Philippe Spiberg, Vladimir Ivantsov, Oleg Kovalenkov, Lisa Shapovalova
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Patent number: 6579359Abstract: A method is disclosed for fabricating monocrystal material with the bandgap width exceeding 1.8 eV. The method comprises the steps of processing a monocrystal semiconductor wafer to develop a porous layer through electrolytic treatment of the wafer at direct current under UV-illumination, and epitaxially growing a monocrystal layer on said porous layer. Growth on porous layer produces semiconductor material with reduced stress and better characteristics than with the same material grown on non-porous layers and substrates. Also, semiconductor device structure comprising at least one layer of porous group III material is included.Type: GrantFiled: June 2, 2000Date of Patent: June 17, 2003Assignee: Technologies and Devices International, Inc.Inventors: Marina Mynbaeva, Denis Tsvetkov, Vladimir Dmitriev, Alexander Lebedev, Nataliya Savkina, Alexander Syrkin, Stephen Saddow, Karim Mynbaev