Patents by Inventor Alexandre Ferron

Alexandre Ferron has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11329095
    Abstract: A photodetection device includes a pixel matrix in which each pixel includes a barrier photodetector. The pixel matrix includes an absorption layer, a barrier layer, a contact layer, and at least one separation element to delimit the pixels. At least one separation element extends above the contact layer, and forms at least one depletion zone that extends locally in the contact layer, to block the lateral circulation of charge carriers.
    Type: Grant
    Filed: February 4, 2020
    Date of Patent: May 10, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Francois Boulard, Cyril Cervera, Alexandre Ferron
  • Publication number: 20200258932
    Abstract: A photodetection device includes a pixel matrix in which each pixel includes a barrier photodetector. The pixel matrix includes an absorption layer, a barrier layer, a contact layer, and at least one separation element to delimit the pixels. At least one separation element extends above the contact layer, and forms at least one depletion zone that extends locally in the contact layer, to block the lateral circulation of charge carriers.
    Type: Application
    Filed: February 4, 2020
    Publication date: August 13, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Francois BOULARD, Cyril CERVERA, Alexandre FERRON
  • Publication number: 20200135968
    Abstract: A light emitting bipolar transistor, comprising at least: first, second and third portions of doped semiconductor, forming a collector, a base and an emitter respectively of the light emitting bipolar transistor; at least one quantum well arranged in the first portion and between two first barrier layers formed by the doped semiconductor of the first portion; and in which the levels of the energy bands of the doped semiconductor of the first portion are higher than those of a semiconductor forming the quantum well which is configured to produce the light emission of the bipolar transistor.
    Type: Application
    Filed: October 30, 2019
    Publication date: April 30, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Anis Daami, Alexandre Ferron, Aurelien Suhm
  • Patent number: 9048357
    Abstract: A semi-conducting structure, configured to receive an electromagnetic radiation and to transform the electromagnetic radiation into an electric signal, including: a first zone and a second zone of a same conductivity type and of same elements; a barrier zone, provided between the first and second zones, for acting as a barrier to majority carriers of the first and second zones on a barrier thickness, the barrier zone having its lowest bandgap energy defining a barrier proportion; and a first interface zone configured to interface the first zone and the barrier zone on a first interface thickness, the first interface zone including a composition of elements which is varied from a proportion corresponding to that of the first material to the barrier proportion, the first interface thickness being at least equal to half the barrier thickness.
    Type: Grant
    Filed: January 2, 2013
    Date of Patent: June 2, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Olivier Gravrand, Alexandre Ferron
  • Publication number: 20150008551
    Abstract: A semi-conducting structure, configured to receive an electromagnetic radiation and to transform the electromagnetic radiation into an electric signal, including: a first zone and a second zone of a same conductivity type and of same elements; a barrier zone, provided between the first and second zones, for acting as a barrier to majority carriers of the first and second zones on a barrier thickness, the barrier zone having its lowest bandgap energy defining a barrier proportion; and a first interface zone configured to interface the first zone and the barrier zone on a first interface thickness, the first interface zone including a composition of elements which is varied from a proportion corresponding to that of the first material to the barrier proportion, the first interface thickness being at least equal to half the barrier thickness.
    Type: Application
    Filed: January 2, 2013
    Publication date: January 8, 2015
    Applicant: Commissariat a l'energie atomique et aux ene alt
    Inventors: Olivier Gravrand, Alexandre Ferron