Patents by Inventor Alexandros Demos
Alexandros Demos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7615482Abstract: Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.Type: GrantFiled: March 23, 2007Date of Patent: November 10, 2009Assignees: International Business Machines Corporation, Applied Materials, Inc.Inventors: Daniel C. Edelstein, Alexandros Demos, Stephen M. Gates, Alfred Grill, Steven E. Molis, Vu Ngoc Tran Nguyen, Steven Reiter, Darryl D. Restaino, Kang Sub Yim
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Publication number: 20080233366Abstract: Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.Type: ApplicationFiled: March 23, 2007Publication date: September 25, 2008Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, APPLIED MATERIALS, INC.Inventors: Daniel C. Edelstein, Alexandros Demos, Stephen M. Gates, Alfred Grill, Steven E. Molis, Vu Ngoc Tran Nguyen, Steven Reiter, Darryl D. Restaino, Kang Sub Yim
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Publication number: 20080099920Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.Type: ApplicationFiled: October 22, 2007Publication date: May 1, 2008Applicant: APPLIED MATERIALS, INC. A Delaware corporationInventors: Francimar Schmitt, Yi Zheng, Kang Yim, Sang Ahn, Lester D'Cruz, Dustin Ho, Alexandros Demos, Li-Qun Xia, Derek Witty, Hichem M'Saad
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Publication number: 20080041415Abstract: One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.Type: ApplicationFiled: October 26, 2007Publication date: February 21, 2008Inventors: Alexandros Demos, Khaled Elsherf, Josphine Chang, Hichem M'saad
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Publication number: 20070275569Abstract: One embodiment of the present invention is a method for fabricating a dielectric film, comprising chemical vapor depositing a dielectric film, and curing the dielectric film, wherein the dielectric film comprises silicon and carbon, and the chemical vapor depositing utilizes a precursor comprising one or more organo-silicon compounds and one or more carbon-carbon bond containing hydrocarbon compounds.Type: ApplicationFiled: August 14, 2007Publication date: November 29, 2007Inventors: FARHAD MOGHADAM, Jun Zhao, Timothy Weidman, Rick Roberts, Li-Qun Xia, Alexandros Demos
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Publication number: 20070134435Abstract: A method for depositing a low dielectric constant film on a substrate in a chamber from a mixture including two organosilicon compounds is provided. The mixture may further include a hydrocarbon compound and an oxidizing gas. The first organosilicon compound has an average of one or more Si—C bonds per Si atom. The second organosilicon compound has an average number of Si—C bonds per Si atom that is greater than the average number of Si—C bonds per Si atom in the first organosilicon compound. The low dielectric constant film has good plasma/wet etch damage resistance, good mechanical properties, and a desirable dielectric constant.Type: ApplicationFiled: December 13, 2005Publication date: June 14, 2007Inventors: Sang Ahn, Alexandros Demos, Hichem M'Saad
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Publication number: 20060289795Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.Type: ApplicationFiled: May 15, 2006Publication date: December 28, 2006Inventors: Dale Dubois, Juan Rocha-Alvarez, Amir Al-Bayati, Khaled Elsheref, Alexandros Demos, Lester D'Cruz, Hichem M'Saad, Ashish Shah, Takashi Shimizu, Naoyuki Iwasaki
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Publication number: 20060272772Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.Type: ApplicationFiled: June 22, 2006Publication date: December 7, 2006Inventors: Amir Al-Bayati, Lester D'Cruz, Alexandros Demos, Dale Dubois, Khaled Elsheref, Naoyuki Iwasaki, Hichem M'Saad, Juan Rocha-Alvarez, Ashish Shah, Takashi Shimizu
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Publication number: 20060192150Abstract: Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.Type: ApplicationFiled: April 27, 2006Publication date: August 31, 2006Applicant: Applied Materials, Inc.Inventors: Alexandros Demos, Khaled Elsheref, Yuri Trachuk, Tom Cho, Girish Dixit, Hichem M'Saad, Derek Witty
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Publication number: 20060171653Abstract: According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose of electron beam radiation at a first energy level; and thereafter, exposing the dielectric layer to a second dose of electron beam radiation at a second energy level that is different from the first energy level.Type: ApplicationFiled: February 1, 2005Publication date: August 3, 2006Applicant: Applied Materials, Inc.Inventors: Alexandros Demos, Li-Qun Xia, Tzu-Fang Huang, Wen Zhu
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Publication number: 20060027764Abstract: The Grunn equation: Depth = 0.046 ? ? ? ( V acc ) n ? is modified to accurately predict depth of electron beam penetration into a target material. A two-layer stack is formed comprising a thickness of the target material overlying a detection material exhibiting greater sensitivity to the electron beam than the target material. The target material is exposed to electron beam radiation of different energies, with the threshold energy resulting in a changed physical property of the detection material below a predetermined value marking a penetration depth corresponding to the target material thickness. Utilizing the threshold energy (Vacc), the target material thickness (Depth), and the known target material density (?), the numerical power “n” of the Grunn equation is calculated to fit experimental results. So modified, the Grunn equation accurately predicts the depth of penetration of electron beams of varying energies into the target material.Type: ApplicationFiled: December 6, 2004Publication date: February 9, 2006Applicant: APPLIED MATERIALS, INC.Inventors: Josephine Liu, Alexandros Demos, Hichem M'Saad
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Publication number: 20050239293Abstract: A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.Type: ApplicationFiled: April 21, 2004Publication date: October 27, 2005Inventors: Zhenjiang Cui, Josephine Chang, Alexandros Demos, Reza Arghavani, Derek Witty, Helen Armer, Girish Dixit, Hichem M'Saad
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Publication number: 20050230834Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.Type: ApplicationFiled: March 21, 2005Publication date: October 20, 2005Applicant: Applied Materials, Inc.Inventors: Francimar Schmitt, Yi Zheng, Kang Yim, Sang Ahn, Lester D'Cruz, Dustin Ho, Alexandros Demos, Li-Qun Xia, Derek Witty, Hichem M'Saad
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Publication number: 20050233591Abstract: Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition.Type: ApplicationFiled: January 28, 2005Publication date: October 20, 2005Applicant: Applied Materials, Inc.Inventors: Francimar Schmitt, Alexandros Demos, Derek Witty, Hichem M'Sadd, Sang Ahn, Lester D'Cruz, Khaled Elsheref, Zhenjiang Cui
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Publication number: 20050224722Abstract: Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.Type: ApplicationFiled: December 1, 2004Publication date: October 13, 2005Applicant: APPLIED MATERIALS, INC.Inventors: Alexandros Demos, Khaled Elsheref, Yuri Trachuk, Tom Cho, Girish Dixit, Hichem M'Saad, Derek Witty
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Publication number: 20050184257Abstract: One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment parameters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.Type: ApplicationFiled: February 20, 2004Publication date: August 25, 2005Inventors: Khaled Elsheref, Alexandros Demos, Hichem M'saad
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Publication number: 20050130404Abstract: One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.Type: ApplicationFiled: January 28, 2005Publication date: June 16, 2005Inventors: Farhad Moghadam, Jun Zhao, Timothy Weidman, Rick Roberts, Li-Qun Xia, Alexandros Demos
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Publication number: 20050092935Abstract: One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whose output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.Type: ApplicationFiled: October 30, 2003Publication date: May 5, 2005Inventors: Alexandros Demos, Hari Ponnekanti, Jun Zhao, Helen Armer