Abstract: A display device includes a support and first and second conductive electrical power supply elements, the first conductive element being arranged on the support. The display device also includes LED modules, each including at least one LED and two electrical power supply pads that are arranged on two opposite faces, respectively, of the LED module, one of which corresponds to an emissive face of the LED. The electrical power supply pads of each LED module are connected to the first and second conductive electrical power supply elements, respectively, and the connection area of an electrical power supply pad of an LED module for connection with the first conductive electrical power supply element is smaller than a receiving area of the first conductive element corresponding to the area of the first conductive element in a parallel plane to the connection areas of the power supply pads of the LED modules.

Abstract: A process for fabricating an optoelectronic device for emitting infrared radiation, including: i) producing a first stack containing a light source, and a first bonding sublayer made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack containing a GeSn-based active layer obtained by epitaxy at an epitaxy temperature (Tepi), and a second bonding sublayer made from the metal of interest, iii) determining an assembly temperature (Tc) substantially between an ambient temperature (Tamb) and the epitaxy temperature (Tepi), such that a direct bonding energy per unit area of the metal of interest is higher than or equal to 0.5 J/m2; and iv) joining, by direct bonding, at the assembly temperature (Tc), the stacks.

Abstract: An optoelectronic device including a semiconductor layer formed from a central segment and at least two lateral segments forming tensioning arms that extend along a longitudinal axis A1. The semiconductor layer furthermore includes at least two lateral segments forming electrical biasing arms that extend along a transverse axis A2 orthogonal to the axis A1.

Abstract: A display device includes a support and first and second conductive electrical power supply elements, the first conductive element being arranged on the support. The display device also includes LED modules, each including at least one LED and two electrical power supply pads that are arranged on two opposite faces, respectively, of the LED module, one of which corresponds to an emissive face of the LED. The electrical power supply pads of each LED module are connected to the first and second conductive electrical power supply elements, respectively, and the connection area of an electrical power supply pad of an LED module for connection with the first conductive electrical power supply element is smaller than a receiving area of the first conductive element corresponding to the area of the first conductive element in a parallel plane to the connection areas of the power supply pads of the LED modules.

Abstract: The invention relates to an optoelectronic device comprising a semiconductor layer 10 formed from a central segment 20 and at least two lateral segments forming tensioning arms 30 that extend along a longitudinal axis A1. The semiconductor layer 10 furthermore comprises at least two lateral segments forming electrical biasing arms 40 that extend along a transverse axis A2 orthogonal to the axis A1.

Abstract: The invention relates to a process for fabricating an optoelectronic device (1) for emitting infrared radiation, comprising the following steps: i) producing a first stack (10) comprising: alight source (11), a first bonding sublayer (17) made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack (20) comprising: a GeSn-based active layer (23) obtained by epitaxy at an epitaxy temperature (Tepi), a second bonding sublayer (25) made from said metal of interest, iii) determining an assembly temperature (Tc) substantially comprised between an ambient temperature (Tamb) and said epitaxy temperature (Tepi), such that a direct bonding energy per unit area of said metal of interest is higher than or equal to 0.5 J/m2; iv) joining, by direct bonding, at said assembly temperature (Tc), said stacks (10, 20).

Abstract: A photosensitive transistor device, on a semiconductor on insulator substrate, the photosensitive zone being formed in a substrate support layer and being arranged so that the concentration of photogenerated charges in the photosensitive zone can be increased towards a given zone facing the channel zone of the transistor.

Abstract: The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.

Abstract: A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.

Abstract: The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.

Abstract: A photosensitive transistor device (T1), on a semiconductor on insulator substrate, the photosensitive zone (20) being formed in the substrate support layer and being arranged so that the concentration of photogenerated charges in the photosensitive zone can be increased towards a given zone facing the channel zone of the transistor.

Abstract: A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.

Abstract: The invention relates to an optoelectronic device (45) including: light-emitting diodes (LED) including semiconductor elements (24); current-limiting components (50), wherein each component is connected in series to one of the semiconductor elements and has a resistance that increases with the strength of the current.

Abstract: The invention relates to an optoelectronic device (50) including: a semiconductor substrate (14) doped with a first conductivity type; semiconductor contact pads (54) or a semiconductor layer, in contact with a surface of the substrate, doped with a second conductivity type opposite to the first type; conical or frusto-conical wired semiconductor elements (26), doped with the first conductivity type, each element being in contact with one of the contact pads or with the layer; light-emitting semiconductor portions (30), each portion at least partially covering one of the semiconductor elements; and a circuit (S) for polarizing the contact pads (54) or the layer. The contact pads or the layer are selected among: aluminum nitride, boron nitride, silicon carbide, magnesium nitride, gallium and magnesium nitride, or a combination of same and the nitride compounds thereof.

Abstract: A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

Abstract: The invention pertains to formation of a semiconducting portion (60) by epitaxial growth on a strained germination portion (40), comprising the steps in which a cavity (21) is produced under a structured part (11) by rendering free a support layer (30) situated facing the structured part (11), a central portion (40), termed the strained germination portion, then being strained; and a semiconducting portion (60) is formed by epitaxial growth on the strained germination portion (40), wherein the structured part (11) is furthermore placed in contact with the support layer (30) in such a way as to bind the structured part (11) of the support layer.

Abstract: A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

Abstract: The invention pertains to formation of a semiconducting portion (60) by epitaxial growth on a strained germination portion (40), comprising the steps in which a cavity (21) is produced under a structured part (11) by rendering free a support layer (30) situated facing the structured part (11), a central portion (40), termed the strained germination portion, then being strained; and a semiconducting portion (60) is formed by epitaxial growth on the strained germination portion (40), wherein the structured part (11) is furthermore placed in contact with the support layer (30) in such a way as to bind the structured part (11) of the support layer.

Abstract: The invention describes a device allowing the observation of a sample, comprising particles, for example biological particles, by lensless imaging. The sample is disposed against a substrate, the substrate being interposed between a light source and an image sensor. The substrate comprises at least one thin film, extending across a thin film plane, structured so as to form a diffraction grating, designed to confine a part of a light wave emitted by the light source, in a plane parallel to said thin film plane. The device does not comprise magnification optics between the substrate and the image sensor.

Abstract: The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device (45), according to the invention includes, in particular: a semiconductor substrate (46) doped with a first type of conductivity; semiconductor contact pads (18) or a semiconductor layer on a surface (16) of the substrate which are/is respectively doped with a second type of conductivity that is the opposite of the first type; and semiconductor elements (24), each semiconductor element being in contact with a contact pad or with the layer.