Abstract: An apparatus performs adaptive analog-to-digital conversion. The apparatus according to one embodiment comprises a frequency modulator unit for changing an input analog signal into a modulated analog signal with a frequency spectrum in a bandwidth of interest, a parallel delta sigma conversion unit operatively connected to the frequency modulator unit, the parallel delta sigma conversion unit converting the modulated analog signal into a digital signal, and a controller operatively connected to the frequency modulator unit and the parallel delta sigma conversion unit, the controller adjusting at least one parameter relating to a frequency characteristic of the frequency modulator unit and/or the parallel delta sigma conversion unit.

Abstract: A process for forming an insulating layer of silicon dioxide in a silicon substrate that surrounds and electrically insulates a semiconductor device is disclosed herein. The process comprises the steps of forming a recess on the outer surface of the silicon substrate that encompasses the site of the semiconductor device by photo-resist patterned reactive ion etching, and then removing silicon on the surface of the resulting recess whose crystal structure has been damaged by the reactive ion etching. Next, dopant atoms are selectively deposited on the surface of the recess so that the surface of the recess might be rendered into a porous layer of silicon when immersed in hydrogen fluoride and subjected to an electrical current. Prior to the porousification step, silicon is epitaxially grown within the walls of the recess to form the site for a semiconductor device.

Abstract: An array of photodetectors is described incorporating a PNP vertical structure in a monosilicon substrate with individual photodetectors optically and electrically isolated from one another by open or oxide filled grooves. Both PN junctions of the PNP structure or originally reverse biased with one junction acting as the photodetector may operate in the forward biased photovoltaic mode with high radiant energy intensity. The minority carriers injected into the N region are absorbed by the other PN junction providing base-collector transistor action to prevent blooming.

Abstract: Apparatus for generating an electrical signal representative of differences in radiant energy of adjacent pixel points of a scene is described incorporating a first and second sensor for sensing radiant energy and a differential amplifier for taking the difference of the output signals of the sensors.The invention overcomes the problem of storing and transferring large signals from the sensors by transferring the difference signals only.