Abstract: Systems, apparatuses and methods may provide for technology that resumes a program operation with respect to NAND memory during a first tier in response to a suspension counter reaching a first threshold and resumes the program operation with respect to the NAND memory during a second tier in response to the suspension counter reaching a second threshold. The technology may also resume the program operation with respect to the NAND memory during a third tier in response to the suspension counter reaching a third threshold. Additionally, the technology may service one or more read operations with respect to the NAND memory until the suspension counter reaches the first threshold during the first tier, until the suspension counter reaches the second threshold during the second tier, and until the suspension counter reaches the third threshold during the third tier.

Abstract: A method performed by a solid state drive is described. The method includes, on a channel that internally couples a controller of the solid state drive to a storage device of the solid state drive, sending write data for a program operation to be performed by one of the storage device's logical units in separate chunks over the channel. The method also includes inserting higher priority traffic items of other logical units of the storage device in between the separate chunks.

Abstract: NAND performance is increased by reducing the time to perform program operations. An operation to program a portion of NAND cells in a NAND memory array includes multiple stages. NAND performance is increased by reducing the time in a first stage of the multiple stages to compute parameters that are used in a second stage to perform program operation(s) and verify operation(s). The time in the first stage is reduced by enabling dynamic prologue selection to dynamically select one of multiple sets of first stage operations to be performed in the first stage for a program operation based on the Word Line (WL), WL-Group, and block information for a current program operation and a previous program operation.

Abstract: Methods and apparatus for Enhanced IO Interface for PLC program and program-suspend-resume operations. A NAND memory device includes blocks of single-level cell (SLC) memory and multi-level cell (MLC) memory storing n-bits per cell such as quad-level cell (QLC) or penta-level cell (PLC) memory. The NAND memory device further includes a plurality of page buffer latches and logic to copy data from a set of n SLC pages in a block of SLC memory into n respective page buffer latches and copy data from the respective page buffer latches to an MLC page (e.g., QLC or PLC page) in a block of MLC memory. These operations can be extended for NAND memory devices having multiple planes with blocks of SLC and QLC/PLC memory. QLC/PLC program and program-resume operations are supported with optional ECC correction operations.

Abstract: An example of a memory device may comprise NAND media with a plurality of decks, and circuitry coupled to the NAND media to control access to a superblock of memory cells aligned along a pillar of the NAND media, wherein the superblock includes at least a first block that corresponds to memory cells aligned along the pillar in a first deck of the plurality of decks and a second block that corresponds to memory cells aligned along the pillar in a second deck of the plurality of decks, configure the NAND media in a first program mode for the first block of the superblock, and configure the NAND media in a second program mode for the second block of the superblock. Other examples are disclosed and claimed.

Abstract: A method performed by a solid state drive is described. The method includes, on a channel that internally couples a controller of the solid state drive to a storage device of the solid state drive, sending write data for a program operation to be performed by one of the storage device's logical units in separate chunks over the channel. The method also includes inserting higher priority traffic items of other logical units of the storage device in between the separate chunks.

Abstract: Programming a multilevel cell (MLC) nonvolatile (NV) media can be performed with internal buffer reuse to reduce the need for external buffering. The internal buffer is on the same die as the NV media to be programmed, along with a volatile memory to store data to program. The internal buffer is to read and program data for the NV media. Programming of the NV media includes staging first partial pages in the buffer for program, reading second partial pages from the NV media to the volatile memory, storing second partial pages in the buffer, and programming the NV media with the first partial pages and the second partial pages.

Abstract: Dynamic program caching reduces latency of a program operation on multi-level cell (MLC) memory having at least three pages and programmable with multiple threshold voltage levels, such as a Triple Level Cell (TLC) NAND. A controller determines that the program operation can be initiated without loading all pages into the memory. In response, the NAND loads a first page and then executes portions of the program operation in parallel, at least in part, with loading subsequent pages. The NAND behavior is modified to monitor data loading completion times, to copy pages from a cache register to a data register as needed, and to resume program operation if a shutdown occurs. The portions of the program operation include a program prologue operation and a pulse verify loop for the first voltage level (L1) of the MLC memory.

Abstract: An embodiment of an apparatus may include NAND memory organized as two or more memory planes and a controller communicatively coupled to the NAND memory, the controller including circuitry to provide synchronous independent plane read operations for the two or more memory planes of the NAND memory. Other embodiments are disclosed and claimed.

Abstract: Manufacturing yield loss of NAND Flash dies is reduced by selecting a plane to store a read-only reserved block and another plane to store a backup read-only reserved block based on the Number of Valid Blocks (NVB) blocks in each plane in the NAND Flash array.

Abstract: A storage device includes a storage array with multiple planes organized as plane groups, where the planes of a plane group receive and process commands in parallel. The storage device includes a storage controller that receives a command from a host controller. In response to receipt of the command the storage controller provides ready information for all planes to the host controller. The multiple planes can optionally have independent multiplane read operation (IMPRO). Each plane group can have a first plane and a second plane, and the storage controller can optionally read data from the first plane of a plane group in response to a virtual ready signal for the first plane, before the second plane of the plane group is ready.

Abstract: A storage device includes a storage array with multiple planes organized as plane groups, where the planes of a plane group receive and process commands in parallel. The storage device includes a storage controller that receives a command from a host controller. In response to receipt of the command the storage controller provides ready information for all planes to the host controller. The multiple planes can optionally have independent multiplane read operation (IMPRO). Each plane group can have a first plane and a second plane, and the storage controller can optionally read data from the first plane of a plane group in response to a virtual ready signal for the first plane, before the second plane of the plane group is ready.

Abstract: An apparatus comprises a plurality of memory cells; a plurality of sense circuits, a sense circuit comprising a sense node selectively coupled to a bitline coupled to a first cell of the plurality of memory cells; and a controller to transpose a value indicative of a voltage of the first cell to the sense node; isolate the sense node from the bitline; and calibrate a parameter for the sense circuit based on outputs of the sense circuit for each of a plurality of different applied values of the parameter.

Abstract: The size of page map memory in a NAND flash device used to store page related information is decreased by embedding page type in a row address. The row address is received by the NAND flash device from the host on the data bus in a six-cycle sequence. The received row address is used to decode a physical page address received during the row address cycle to obtain a word line and a block segment number for a block segment in the word line in the NAND flash array. A same block segment number is used for each page type in the block segment.

Abstract: Systems, apparatuses and methods may provide for technology that conducts a pulse-verify loop sequence from a first program level in targeted NAND memory cells to a next-to-last program level in the memory cells, wherein the pulse-verify loop sequence includes an issuance of a program pulse and one or more verify pulses to the memory cells on a per program level basis, and wherein successive program pulses differ from one another by a gate step voltage amount. The technology may also issue a last level program pulse to the memory cells at a last program level, issue a single verify pulse to the memory cells after the last level program pulse, and issue a gate step pulse to the memory cells at a variable program level, wherein the variable program level differs from the last program level by an amount that is greater than the gate step voltage amount.

Abstract: Systems, apparatuses and methods may provide for technology that sends a first command to a NAND die, sends first address information to the NAND die, and sends a second command to the NAND die, wherein the first command and the second command define a first command sequence and wherein the first address information signal a beginning of a first asynchronous read request from a first plurality of planes. In one example, the technology also sends a second command sequence and second address information to the NAND die wherein the second command sequence signals an end of the first asynchronous read request.

Abstract: Systems, apparatuses, and methods provide for technology for distinguishing an erased state, a first pass programmed state, and a second pass programmed state of a memory page. A threshold voltage state verify sense is performed. A memory page status is determined based on the threshold voltage state verify sense. The memory page status is one of erased, programmed with first pass data, and programmed with second pass data based on the threshold voltage state verify sense. A program continuation is performed after a program interruption based on the memory page status.

Abstract: A disclosed example to use an erase-suspend feature on a memory device includes a host interface to receive a first erase command to perform an erase operation; and a control circuit to: based on the erase-suspend feature being enabled at the memory device, suspend the erase operation based on determining that a length of time equal to an erase segment duration value has elapsed, the length of time elapsed being relative to a start of an erase segment, and the erase segment duration value specified in a configuration parameter for the erase-suspend feature; perform a second memory operation when the erase operation is suspended; and after the second memory operation is complete, resume the erase operation based on receiving a second erase command from the memory host controller.

Abstract: Systems, apparatuses and methods may provide for technology that resumes a program operation with respect to NAND memory during a first tier in response to a suspension counter reaching a first threshold and resumes the program operation with respect to the NAND memory during a second tier in response to the suspension counter reaching a second threshold. The technology may also resume the program operation with respect to the NAND memory during a third tier in response to the suspension counter reaching a third threshold. Additionally, the technology may service one or more read operations with respect to the NAND memory until the suspension counter reaches the first threshold during the first tier, until the suspension counter reaches the second threshold during the second tier, and until the suspension counter reaches the third threshold during the third tier.

Abstract: An apparatus comprises a plurality of memory cells; a plurality of sense circuits, a sense circuit comprising a sense node selectively coupled to a bitline coupled to a first cell of the plurality of memory cells; and a controller to transpose a value indicative of a voltage of the first cell to the sense node; isolate the sense node from the bitline; and calibrate a parameter for the sense circuit based on outputs of the sense circuit for each of a plurality of different applied values of the parameter.