Abstract: A method for fabricating a ferroelectric device includes providing a lower electrode layer on a substrate, forming a retention enhancement layer by oxidizing a surface of the lower electrode layer using a gas phase oxidation process, and depositing a ferroelectric high-k metal oxide layer over the retention enhancement layer on the lower electrode layer using a vapor deposition process. The retention enhancement layer on the lower electrode layer increases the retention performance and reliability of the ferroelectric device.

Abstract: Various aspects relate to a memory cell including: a first electrode; a second electrode; and a memory element, the first electrode, the second electrode, and the memory element forming a memory capacitor; wherein the memory element includes a spontaneously polarizable layer stack which includes an alternating sequence of first sublayers and second sublayers, wherein each of the second sublayers substantially consists of a mixed material of an oxide of a first transition metal and an oxide of a second transition metal, wherein each of the first sublayers substantially consists of the oxide of the first transition metal or second transition metal; wherein a first concentration of the first transition metal and a second concentration of the second transition metal in the mixed material are substantially different from one another, and/or wherein the alternating sequence starts with one of the first sublayers and ends with another one of the first sublayers.

Abstract: Various aspects relate to a memory cell including: a first electrode; a second electrode; and a memory element disposed between the first electrode and the second electrode. The memory element includes a spontaneously polarizable material. The first electrode, the second electrode, and the memory element forming a memory capacitor. The first electrode and/or the second electrode includes: an electrically conductive electrode layer, and a functional layer comprising a semi-conductive material, wherein the functional layer is in direct physical contact with the memory element.