Patents by Inventor Allen P. Mardian

Allen P. Mardian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7581511
    Abstract: A reactor comprising an energy source, a plasma unit positioned relative to the energy source, and a processing vessel connected to the plasma unit. The energy source has a generator that produces a plasma energy and a transmitter to transmit the plasma energy. The plasma unit has a first portion or transmissive portion through which the plasma energy can propagate, a second portion or distributor portion having a plurality of outlets, and a chamber in fluid communication with the plurality of outlets. The chamber is generally between or within the first and second portions. The plasma energy can pass through at least the first portion and into the chamber to create a plasma in the chamber. The second portion can also be transmissive or opaque to the plasma energy. The processing vessel includes a workpiece holder across from the outlets of the second portion of the plasma unit.
    Type: Grant
    Filed: October 10, 2003
    Date of Patent: September 1, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Allen P. Mardian, Santiago R. Rodriguez
  • Patent number: 7481887
    Abstract: An apparatus for depositing materials onto a micro-device workpiece includes a gas source system configured to provide a first precursor, a second precursor, and a purge gas. The apparatus can also include a valve assembly coupled to the gas source system. The valve assembly is configured to control a flow of the first precursor, a flow the second precursor, and a flow of the purge gas. Another component of the apparatus is a reaction chamber including an inlet coupled to the valve assembly, a workpiece holder in the reaction chamber, and an outlet downstream from the workpiece holder. The apparatus also includes a monitoring system and a controller. The monitoring system comprises a radiation source that directs a selected radiation through the reaction chamber and a detector that senses a parameter of the radiation directed through the reaction chamber. The controller is operatively coupled to the monitoring system and the valve assembly.
    Type: Grant
    Filed: December 29, 2004
    Date of Patent: January 27, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Craig M. Carpenter, Ross S. Dando, Allen P. Mardian
  • Patent number: 7468104
    Abstract: A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. A substrate holder is received within the chamber. At least one process chemical inlet to the deposition chamber is included. At least one of the chamber sidewall and chamber base wall includes a chamber surface having a plurality of purge gas inlets to the chamber therein. The purge gas inlets are separate from the at least one process chemical inlet. A purge gas inlet passageway is provided in fluid communication with the purge gas inlets. Further implementations, including deposition method implementations, are contemplated.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: December 23, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Allen P. Mardian, Philip H. Campbell, Craig M. Carpenter, Randy W. Mercil, Sujit Sharan
  • Patent number: 7431225
    Abstract: The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to-the body and a plurality of peltier cells coupled to the body.
    Type: Grant
    Filed: August 10, 2004
    Date of Patent: October 7, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Ross S. Dando, Allen P. Mardian, Raynald B. Cantin, Gurtej S. Sandhu
  • Patent number: 7387685
    Abstract: Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate.
    Type: Grant
    Filed: September 2, 2004
    Date of Patent: June 17, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Craig M. Carpenter, Allen P. Mardian, Ross S. Dando, Kimberly R. Tschepen, Garo J. Derderian
  • Patent number: 7329292
    Abstract: A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed within the trap device, may influence the formation of deposits within the trap device, or may cause a precipitate to form. Deposit interaction elements may be employed to influence the distribution or redistribution of deposits within the trap device. Deposit interaction elements may effect thermal conditions, introduce substances, or physically interact with deposits within the trap device. Further, a storage region within the trap device may be used to accumulate deposits. In one embodiment, a substantially continuous path through the trap device may be maintained or preserved so that deposits form within the trap device except substantially along the path. The present invention also encompasses a method of operation of a trap device as well as a system incorporating same.
    Type: Grant
    Filed: October 25, 2005
    Date of Patent: February 12, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Allen P. Mardian, Philip H. Campbell
  • Patent number: 7311947
    Abstract: A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor.
    Type: Grant
    Filed: October 10, 2003
    Date of Patent: December 25, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Ross S. Dando, Dan Gealy, Craig M. Carpenter, Philip H. Campbell, Allen P. Mardian
  • Patent number: 7270715
    Abstract: A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: September 18, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Ross S. Dando, Craig M. Carpenter, Philip H. Campbell, Allen P. Mardian
  • Patent number: 7255128
    Abstract: Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: August 14, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Singh Sandhu, Sujit Sharan, Neal R. Rueger, Allen P. Mardian
  • Patent number: 7234412
    Abstract: A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A replacement for the removed deposition chamber liner piece is provided into the chamber by passing the replacement through said passageway. A liner apparatus includes a plurality of pieces which when assembled within a selected semiconductor substrate deposition processor chamber are configured to restrict at least a majority portion of all internal wall surfaces which define said semiconductor substrate deposition processor chamber from exposure to deposition material within the chamber. At least some of the pieces are sized for passing completely through a substrate passageway to the chamber through which semiconductor substrates pass into and out of the chamber for deposition processing.
    Type: Grant
    Filed: January 23, 2003
    Date of Patent: June 26, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Craig M. Carpenter, Ross S. Dando, Philip H. Campbell, Allen P. Mardian, Gurtej S. Sandhu
  • Patent number: 7229666
    Abstract: Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned within the chamber and a process gas is provided over the substrate effective to deposit material onto the substrate. While providing the process gas, a purge gas is emitted into the chamber from a plurality of purge gas inlets comprised by at least one chamber wall surface. The purge gas inlets are separate from the at least one process chemical inlet and the emitting forms an inert gas curtain over the chamber wall surface.
    Type: Grant
    Filed: August 6, 2004
    Date of Patent: June 12, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Allen P. Mardian, Philip H. Campbell, Craig M. Carpenter, Randy W. Mercil, Sujit Sharan
  • Patent number: 7192487
    Abstract: A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: March 20, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Craig M. Carpenter, Ross S. Dando, Allen P. Mardian, Kevin T. Hamer, Raynald B. Cantin, Philip H. Campbell, Kimberly R. Tschepen, Randy W. Mercil
  • Patent number: 7185601
    Abstract: A chemically sensitive warning apparatus capable of changing colors upon contact with a chemical is disclosed. The apparatus preferably comprises an elongated tape having opposed, first and second major surfaces and warning indicia visible to an individual viewing the first surface to provide visual indication of possible danger or hazardous condition. Mounted to the tape is at least one chemical indicator that is responsive to the presence of at least one chemical by changing colors so as to provide a visual indication of the exposure of the indicator to the chemical. The tape may also include at least one color reference indicia to facilitate interpretation of the color of the chemical indicator when the chemical indicator changes color upon exposure to the chemical.
    Type: Grant
    Filed: March 1, 2001
    Date of Patent: March 6, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Craig M. Carpenter, Allen P. Mardian, Philip H. Campbell, Ross S. Dando
  • Patent number: 7118783
    Abstract: CVD, ALD, and other vapor processes used in processing semiconductor workpieces often require volatilizing a liquid or solid precursor. Certain embodiments of the invention provide improved and/or more consistent volatilization rates by moving a reaction vessel. In one exemplary embodiment, a reaction vessel is rotated about a rotation axis which is disposed at an angle with respect to vertical. This deposits a quantity of the reaction precursor on an interior surface of the vessel's sidewall which is exposed to the headspace as the vessel rotates. Other embodiments employ drivers adapted to move the reaction vessel in other manners, such as a pendulum arm to oscillate the vessel along an arcuate path or a mechanical linkage which moves the vessel along an elliptical path.
    Type: Grant
    Filed: June 26, 2002
    Date of Patent: October 10, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Craig M. Carpenter, Ross S. Dando, Dan Gealy, Garo J. Derderian, Allen P. Mardian
  • Patent number: 7114669
    Abstract: The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body and a plurality of peltier cells coupled to the body.
    Type: Grant
    Filed: August 13, 2004
    Date of Patent: October 3, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Ross S. Dando, Allen P. Mardian, Raynald B. Cantin, Gurtej S. Sandhu
  • Patent number: 7114404
    Abstract: Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received.
    Type: Grant
    Filed: September 29, 2003
    Date of Patent: October 3, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Singh Sandhu, Sujit Sharan, Neal R. Rueger, Allen P. Mardian
  • Patent number: 7044997
    Abstract: A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed within the trap device, may influence the formation of deposits within the trap device, or may cause a precipitate to form. Deposit interaction elements may be employed to influence the distribution or redistribution of deposits within the trap device. Deposit interaction elements may effect thermal conditions, introduce substances, or physically interact with deposits within the trap device. Further, a storage region within the trap device may be used to accumulate deposits. In one embodiment, a substantially continuous path through the trap device may be maintained or preserved so that deposits form within the trap device except substantially along the path. The present invention also encompasses a method of operation of a trap device as well as a system incorporating same.
    Type: Grant
    Filed: September 24, 2003
    Date of Patent: May 16, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Allen P. Mardian, Philip H. Campbell
  • Patent number: 7000636
    Abstract: The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: February 21, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Ross S. Dando, Gurtej S. Sandhu, Allen P. Mardian
  • Patent number: 6997403
    Abstract: The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body and a plurality of peltier cells coupled to the body.
    Type: Grant
    Filed: January 13, 2003
    Date of Patent: February 14, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Ross S. Dando, Allen P. Mardian, Raynald B. Cantin, Gurtej S. Sandhu
  • Patent number: 6936547
    Abstract: The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer.
    Type: Grant
    Filed: October 31, 2002
    Date of Patent: August 30, 2005
    Assignee: Micron Technology, Inc..
    Inventors: Weimin Li, Neal R. Rueger, Li Li, Ross S. Dando, Kevin T. Hamer, Allen P. Mardian