Patents by Inventor Alok Vaid

Alok Vaid has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210124272
    Abstract: Embodiments of the present disclosure provide an apparatus including mask pattern formed on a mask substrate. A plurality of spatial radiation modulators may be vertically displaced from the mask pattern, and distributed across a two-dimensional area. Each of the plurality of spatial radiation modulators may be adjustable between a first transparent state and a second transparent state to control whether radiation transmitted through the mask pattern passes through each of the plurality of spatial radiation modulators.
    Type: Application
    Filed: October 23, 2019
    Publication date: April 29, 2021
    Inventors: Ezra D.B. Hall, Jed H. Rankin, Alok Vaid
  • Patent number: 10976666
    Abstract: Embodiments of the present disclosure provide an apparatus including mask pattern formed on a mask substrate. A plurality of spatial radiation modulators may be vertically displaced from the mask pattern, and distributed across a two-dimensional area. Each of the plurality of spatial radiation modulators may be adjustable between a first transparent state and a second transparent state to control whether radiation transmitted through the mask pattern passes through each of the plurality of spatial radiation modulators.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: April 13, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Ezra D. B. Hall, Jed H. Rankin, Alok Vaid
  • Publication number: 20200409345
    Abstract: A process control method for manufacturing semiconductor devices, including determining a quality metric of a production semiconductor wafer by comparing production scatterometric spectra of a production structure of the production wafer with reference scatterometric spectra of a reference structure of reference semiconductor wafers, the production structure corresponding to the reference structure, the reference spectra linked by machine learning to a reference measurement value of the reference structure, determining a process control parameter value (PCPV) of a wafer processing step, the PCPV determined based on measurement of the production wafer and whose contribution to the PCPV is weighted with a first predefined weight based on the quality metric, and based on a measurement of a different wafer and whose contribution to the PCPV is weighted with a second predefined weight based on the quality metric, and controlling, with the PCPV, the processing step during fabrication.
    Type: Application
    Filed: June 27, 2019
    Publication date: December 31, 2020
    Inventors: TAHER KAGALWALA, ALOK VAID, SHAY YOGEV, MATTHEW SENDELBACH, PAUL ISBESTER, YOAV ETZIONI
  • Publication number: 20200279783
    Abstract: Process control during manufacture of semiconductor devices by collecting scatterometric spectra of a FinFET reference fin structure on a reference semiconductor wafer at a first checkpoint proximate to a first processing step during fabrication of the reference semiconductor wafer, collecting reference measurements of the reference fin structure at a second checkpoint proximate to a second processing step subsequent to the first checkpoint, and performing machine learning to identify correspondence between the scatterometric spectra and values based on the reference measurements and train a prediction model for producing a prediction value associated with a corresponding production fin structure of the FinFET on a production semiconductor wafer based on scatterometric spectra of the production fin structure collected at the corresponding first checkpoint during fabrication of the production semiconductor wafer.
    Type: Application
    Filed: February 28, 2019
    Publication date: September 3, 2020
    Inventors: PADRAIG TIMONEY, TAHER KAGALWALA, ALOK VAID, SRIDHAR MAHENDRAKAR, DHAIRYA DIXIT, SHAY YOGEV, MATTHEW SENDELBACH, CHARLES KANG
  • Publication number: 20200192987
    Abstract: Measuring SRAM structures having FinFET transistors by obtaining, on a production semiconductor wafer, spectra of a SRAM production structure including FinFET fins and gates, identifying SRAM reference structure spectra corresponding to the spectra, the reference structure from measuring, on a reference semiconductor wafer, a reference structure including a layout of FinFET fins having gates, injecting, into an OCD model of the production structure, fin target parameter values, corresponding to the identified reference structure spectra, from measuring, on the reference wafer, a fin target including a layout of exposed FinFET fins lacking gates similar or identical to the reference structure layout, correspondence between the fin target parameter values and the reference structure spectra previously identified by ML, and determining measurement values for the FinFET gates of the production structure by fitting reference spectra associated with the production structure in the OCD model to the production struct
    Type: Application
    Filed: December 17, 2018
    Publication date: June 18, 2020
    Inventors: TAHER KAGALWALA, SRIDHAR MAHENDRAKAR, MATTHEW SENDELBACH, ALOK VAID
  • Patent number: 10664638
    Abstract: Measuring SRAM structures having FinFET transistors by obtaining, on a production semiconductor wafer, spectra of a SRAM production structure including FinFET fins and gates, identifying SRAM reference structure spectra corresponding to the spectra, the reference structure from measuring, on a reference semiconductor wafer, a reference structure including a layout of FinFET fins having gates, injecting, into an OCD model of the production structure, fin target parameter values, corresponding to the identified reference structure spectra, from measuring, on the reference wafer, a fin target including a layout of exposed FinFET fins lacking gates similar or identical to the reference structure layout, correspondence between the fin target parameter values and the reference structure spectra previously identified by ML, and determining measurement values for the FinFET gates of the production structure by fitting reference spectra associated with the production structure in the OCD model to the production struct
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: May 26, 2020
    Assignees: GLOBALFOUNDRIES INC., NOVA MEASURING INSTRUMENTS LTD.
    Inventors: Taher Kagalwala, Sridhar Mahendrakar, Matthew Sendelbach, Alok Vaid
  • Patent number: 10508900
    Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: December 17, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Padraig Timoney, Alok Vaid
  • Patent number: 10302414
    Abstract: A method and system are presented for use in model-based optical measurements in patterned structures. The method comprises: selecting an optimal optical model for interpretation of optical measured data indicative of optical response of the structure under measurements. The selection of the optimal optical model comprises: creating a complete optical model with floating parameters defining multiple configurations of said complete model including one or more model configurations describing an optical response of the structure under measurements, utilizing the complete model for predicting a reference optical response from the structure and generating corresponding virtual reference data, and using the virtual reference data for selecting the optimal optical model for interpretation of the optical measured data.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: May 28, 2019
    Assignees: NOVA MEASURING INSTRUMENTS LTD., GLOBALFOUNDRIES INC.
    Inventors: Gilad Wainreb, Etai Littwin, Alok Vaid, Michael Klots, Cornel Bozdog, Matthew Sendelbach
  • Patent number: 10121711
    Abstract: Approaches for providing a substrate having a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. Specifically, the FinFET device comprises a finned substrate, and a planar metrology pad formed on the substrate adjacent the fins in a metrology measurement area of the FinFET device. Processing steps include forming a first hardmask over the substrate, forming a photoresist over a portion of the first hardmask in the metrology measurement area of the FinFET device, removing the first hardmask in an area adjacent the metrology measurement area remaining exposed following formation of the photoresist, patterning a set of openings in the substrate to form the set of fins in the FinFET device in the area adjacent the metrology measurement area, depositing an oxide layer over the FinFET device, and planarizing the FinFET device to form the planar metrology pad in the metrology measurement area.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: November 6, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Sipeng Gu, Xiang Hu, Alok Vaid, Lokesh Subramany, Akshey Sehgal
  • Patent number: 10030971
    Abstract: A measurement method and system are presented for in-line measurements of one or more parameters of thin films in structures progressing on a production line. First measured data and second measured data are provided from multiple measurements sites on the thin film being measured, wherein the first measured data corresponds to first type measurements from a first selected set of a relatively small number of the measurement sites, and the second measured data corresponds to second type optical measurements from a second set of significantly higher number of the measurements sites. The first measured data is processed for determining at least one value of at least one parameter of the thin film in each of the measurement sites of said first set. Such at least one parameter value is utilized for interpreting the second measured data, thereby obtaining data indicative of distribution of values of said at least one parameter within said second set of measurement sites.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: July 24, 2018
    Assignees: Globalfoundries, Inc., Nova Measuring Instruments Ltd.
    Inventors: Cornel Bozdog, Alok Vaid, Sridhar Mahendrakar, Mainul Hossain, Taher Kagalwala
  • Publication number: 20180172609
    Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer.
    Type: Application
    Filed: December 18, 2017
    Publication date: June 21, 2018
    Inventors: Wei Ti LEE, Heath A. POIS, Mark KLARE, Cornel BOZDOG, Alok VAID
  • Patent number: 9995692
    Abstract: Systems and methods for controlling manufacturing processes for microelectronic components are provided. In an exemplary embodiment, a method includes determining a specification range for a desired parameter. The microelectronic component is processed in a manufacturing tool, and a trace data set is recorded during the processing. An estimated trace data parameter is determined with the trace data set, and a first measured value of the microelectronic component is measured in a measurement tool. An estimated desired parameter is determined using the first measured value and the estimated trace data parameter, and the manufacturing process is adjusted when the estimated desired parameter is outside of the specification range.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: June 12, 2018
    Assignee: GLOBALFOUNDRIES, INC.
    Inventors: Givantha Iddawela, Alok Vaid
  • Publication number: 20180135967
    Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.
    Type: Application
    Filed: January 12, 2018
    Publication date: May 17, 2018
    Inventors: Padraig TIMONEY, Alok VAID
  • Patent number: 9903707
    Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.
    Type: Grant
    Filed: September 18, 2015
    Date of Patent: February 27, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Padraig Timoney, Alok Vaid
  • Publication number: 20170199511
    Abstract: Methodologies and a device for simulating individual process steps and producing parameters representing each individual process signal profile are provided. Embodiments include collecting, by way of a programmed processor, wafer level data in the form of electrical signatures during processing steps in the production of a semiconductor device; converting the electrical signatures during each of the processing steps into signal matrix (MS) modeling parameters; comparing the MS modeling parameters to predefined MS modeling parameters; and adjusting at least one processing step based on a result of the comparing step for process control.
    Type: Application
    Filed: January 12, 2016
    Publication date: July 13, 2017
    Inventors: Dongsuk PARK, Alok VAID, Binod Kumar Gopalakrishn NAIR
  • Publication number: 20170082423
    Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.
    Type: Application
    Filed: September 18, 2015
    Publication date: March 23, 2017
    Inventors: Padraig TIMONEY, Alok VAID
  • Publication number: 20170038201
    Abstract: A measurement method and system are presented for in-line measurements of one or more parameters of thin films in structures progressing on a production line. First measured data and second measured data are provided from multiple measurements sites on the thin film being measured, wherein the first measured data corresponds to first type measurements from a first selected set of a relatively small number of the measurement sites, and the second measured data corresponds to second type optical measurements from a second set of significantly higher number of the measurements sites. The first measured data is processed for determining at least one value of at least one parameter of the thin film in each of the measurement sites of said first set. Such at least one parameter value is utilized for interpreting the second measured data, thereby obtaining data indicative of distribution of values of said at least one parameter within said second set of measurement sites.
    Type: Application
    Filed: August 4, 2016
    Publication date: February 9, 2017
    Inventors: Cornel Bozdog, Alok Vaid, Sridhar Mahendrakar, Mainul Hossain, Taher Kagalwala
  • Publication number: 20170018069
    Abstract: A computerized system and method are provided for use in measuring at least one parameter of interest of a structure. The system comprises a server utility configured for data communication with at least first and second data provider utilities. The server utility receives, from the server provider utilities, measured data comprising first and second measured data pieces of different types indicative of parameters of the same structure; and is capable of processing the first and second measured data pieces for optimizing one or more first parameters values of the structure in one of the first and second measured data pieces by utilizing one or more second parameters values of the structure of the other of said first and second measured data pieces.
    Type: Application
    Filed: October 30, 2014
    Publication date: January 19, 2017
    Inventors: Alok Vaid, Cornel Bozdong, Shay Wolfling, Matthew J. Sendelbach, Jamie Tsai, Cermen Osorio
  • Publication number: 20160239012
    Abstract: Systems and methods for controlling manufacturing processes for microelectronic components are provided. In an exemplary embodiment, a method includes determining a specification range for a desired parameter. The microelectronic component is processed in a manufacturing tool, and a trace data set is recorded during the processing. An estimated trace data parameter is determined with the trace data set, and a first measured value of the microelectronic component is measured in a measurement tool. An estimated desired parameter is determined using the first measured value and the estimated trace data parameter, and the manufacturing process is adjusted when the estimated desired parameter is outside of the specification range.
    Type: Application
    Filed: February 4, 2016
    Publication date: August 18, 2016
    Inventors: Givantha Iddawela, Alok Vaid
  • Patent number: 9330985
    Abstract: Methods and systems are provided for fabricating and measuring features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves fabricating a feature of the semiconductor device structure on a wafer of semiconductor material, determining a hybrid recipe for measuring the feature, configuring a plurality of metrology tools to implement the hybrid recipe, and obtaining a hybrid measurement of the feature in accordance with the hybrid recipe.
    Type: Grant
    Filed: March 13, 2012
    Date of Patent: May 3, 2016
    Assignees: GLOBALFOUNDRIES, INC., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Alok Vaid, Ned R. Saleh, Matthew J. Sendelbach, Narender N. Rana